公开(公告)号：US5456796A

公开(公告)日：1995-10-10

申请号：US71288

申请日：1993-06-02

申请人： Anand Gupta ,  Yan Ye ,  Joseph Lanucha

发明人： Anand Gupta ,  Yan Ye ,  Joseph Lanucha

IPC分类号： C23C16/50 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/32862 ,  C23C16/4401 ,  H01J37/32082 ,  H01J2237/022 ,  Y10S438/905

摘要： An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.

摘要翻译： 在将晶片引入反应室之前，RF信号被迅速地达到高功率水平，以启动搅动和循环反应室内的任何颗粒的等离子体，从而允许有效的反应室清洁; 并且将RF信号缓慢地带到高功率水平以在晶片处理之前或期间启动等离子体，以避免在晶片处理期间干扰和循环这种颗粒，从而防止颗粒引起的污染。 可以将磁场施加到反应室以将颗粒从等离子体鞘/辉光区界面移动到反应室排气管线，从而防止这些颗粒落到加工的晶片上。

公开(公告)号：US5423918A

公开(公告)日：1995-06-13

申请号：US124900

申请日：1993-09-21

申请人： Anand Gupta ,  Charles S. Rhoades ,  Yan Ye ,  Joseph Lanucha

发明人： Anand Gupta ,  Charles S. Rhoades ,  Yan Ye ,  Joseph Lanucha

IPC分类号： H01L21/302 ,  C23C16/44 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/687 ,  B08B6/00

CPC分类号： H01L21/68721 ,  C23C16/4401 ,  H01J37/32834 ,  H01L21/02046 ,  H01L21/68 ,  H01J2237/022

摘要： A technique for removing particles from above a semiconductor wafer, particularly particles that are trapped in a plasma chamber during processing of the wafer. Trapped particles are usually not all drawn out with gases exhausted from the chamber, in part because a peripheral focus ring and clamping mechanism impede their flow. In the method of the invention, the focus ring and clamping mechanism are raised on completion of processing, but before radio-frequency (rf) power is disconnected from the process chamber. Trapped particles are then easily flowed from the chamber with an introduced inert gas, and the level of particulate contamination of the wafer is significantly reduced.

摘要翻译： 一种用于从半导体晶片上方去除颗粒的技术，特别是在晶片加工期间被捕获在等离子体室中的颗粒。 被捕获的颗粒通常不会被从室排出的气体全部抽出，部分是因为外围聚焦环和夹紧机构阻碍了它们的流动。 在本发明的方法中，聚焦环和夹持机构在处理完成之后，但在射频（RF）功率与处理室断开之前升高。 捕获的颗粒然后容易地从引入的惰性气体从室流出，并且晶片的颗粒污染物的水平显着降低。

公开(公告)号：US5622595A

公开(公告)日：1997-04-22

申请号：US559855

申请日：1995-11-20

申请人： Anand Gupta ,  Joseph Lanucha

发明人： Anand Gupta ,  Joseph Lanucha

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  Y10S438/935 ,  Y10S438/974

摘要： Contaminant particles in a vacuum plasma processing chamber can be removed from the surface of a substrate in the chamber by first reducing the pressure in the chamber so as to elevate the particles above any obstruction about the substrate, including a clamping ring and the like, maintaining a plasma from a gas fed to the chamber so that the particles are in the plasma, and then increasing the gas flow to the chamber so as to sweep the particles out of the chamber through the exhaust system of the processing chamber while maintaining a plasma in the chamber.

摘要翻译： 真空等离子体处理室中的污染物颗粒可以通过首先减小腔室中的压力从腔室中的衬底的表面去除，以便将颗粒提升到围绕衬底的任何障碍物上，包括夹紧环等，保持 来自供给到室的气体的等离子体，使得颗粒处于等离子体中，然后增加到室的气流，以便通过处理室的排气系统将颗粒从室中扫除，同时保持等离子体 房间。

公开(公告)号：US5410122A

公开(公告)日：1995-04-25

申请号：US31800

申请日：1993-03-15

申请人： Yuh-Jia Su ,  Anand Gupta ,  Graham W. Hills ,  Joseph Lanucha

发明人： Yuh-Jia Su ,  Anand Gupta ,  Graham W. Hills ,  Joseph Lanucha

IPC分类号： H01J37/32 ,  B23K10/00 ,  B44C1/22 ,  H01L21/00

CPC分类号： H01J37/32431 ,  H01J2237/022

摘要： Particles are repelled from the upper face of a wafer in a plasma chamber by inducing positive or negative charges on the substrate without generating a gas plasma above the substrate. The charges are induced in the substrate by bringing a conductive sheet carrying a DC voltage close to the underside of the substrate. The particle repelling effect may be enhanced by inducing alternating positive and negative charges in the substrate. This can be done by switching the polarity of the DC voltage applied to the conductive sheet, or alternatively by moving an actuator to repetitively ground and isolate the substrate from the chamber.

摘要翻译： 通过在衬底上引起正电荷或负电荷而不在衬底上产生气体等离子体，在等离子体室中从晶片的上表面排出颗粒。 通过使承载DC电压的导电片靠近衬底的下侧而在衬底中感应电荷。 可以通过在衬底中诱导交替的正电荷和负电荷来增强颗粒排斥效应。 这可以通过切换施加到导电片的DC电压的极性，或者通过移动致动器来重复地接地并将衬底与腔室隔离来实现。