公开(公告)号：US5423918A

公开(公告)日：1995-06-13

申请号：US124900

申请日：1993-09-21

申请人： Anand Gupta ,  Charles S. Rhoades ,  Yan Ye ,  Joseph Lanucha

发明人： Anand Gupta ,  Charles S. Rhoades ,  Yan Ye ,  Joseph Lanucha

IPC分类号： H01L21/302 ,  C23C16/44 ,  H01J37/32 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/68 ,  H01L21/687 ,  B08B6/00

CPC分类号： H01L21/68721 ,  C23C16/4401 ,  H01J37/32834 ,  H01L21/02046 ,  H01L21/68 ,  H01J2237/022

摘要： A technique for removing particles from above a semiconductor wafer, particularly particles that are trapped in a plasma chamber during processing of the wafer. Trapped particles are usually not all drawn out with gases exhausted from the chamber, in part because a peripheral focus ring and clamping mechanism impede their flow. In the method of the invention, the focus ring and clamping mechanism are raised on completion of processing, but before radio-frequency (rf) power is disconnected from the process chamber. Trapped particles are then easily flowed from the chamber with an introduced inert gas, and the level of particulate contamination of the wafer is significantly reduced.

摘要翻译： 一种用于从半导体晶片上方去除颗粒的技术，特别是在晶片加工期间被捕获在等离子体室中的颗粒。 被捕获的颗粒通常不会被从室排出的气体全部抽出，部分是因为外围聚焦环和夹紧机构阻碍了它们的流动。 在本发明的方法中，聚焦环和夹持机构在处理完成之后，但在射频（RF）功率与处理室断开之前升高。 捕获的颗粒然后容易地从引入的惰性气体从室流出，并且晶片的颗粒污染物的水平显着降低。

公开(公告)号：US5456796A

公开(公告)日：1995-10-10

申请号：US71288

申请日：1993-06-02

申请人： Anand Gupta ,  Yan Ye ,  Joseph Lanucha

发明人： Anand Gupta ,  Yan Ye ,  Joseph Lanucha

IPC分类号： C23C16/50 ,  C23C16/44 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/00

CPC分类号： H01J37/32862 ,  C23C16/4401 ,  H01J37/32082 ,  H01J2237/022 ,  Y10S438/905

摘要： An RF signal is rapidly brought to a high power level prior to the introduction of a wafer into the reaction chamber to initiate a plasma that agitates and circulates any particles within the reaction chamber, thereby allowing effective reaction chamber cleaning; and an RF signal is slowly brought to a high power level to initiate a plasma prior to or during wafer processing to avoid disturbing and circulating such particles during wafer processing, thereby preventing particle induced contamination. A magnetic field may be applied to the reaction chamber to move particles from a plasma sheath/glow region interface to a reaction chamber exhaust line, and thereby prevent such particles from falling onto a processed wafer.

摘要翻译： 在将晶片引入反应室之前，RF信号被迅速地达到高功率水平，以启动搅动和循环反应室内的任何颗粒的等离子体，从而允许有效的反应室清洁; 并且将RF信号缓慢地带到高功率水平以在晶片处理之前或期间启动等离子体，以避免在晶片处理期间干扰和循环这种颗粒，从而防止颗粒引起的污染。 可以将磁场施加到反应室以将颗粒从等离子体鞘/辉光区界面移动到反应室排气管线，从而防止这些颗粒落到加工的晶片上。

公开(公告)号：US5486235A

公开(公告)日：1996-01-23

申请号：US104318

申请日：1993-08-09

申请人： Yan Ye ,  Charles S. Rhoades ,  Gerald Z. Yin

发明人： Yan Ye ,  Charles S. Rhoades ,  Gerald Z. Yin

IPC分类号： C23C14/00 ,  B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065

CPC分类号： H01L21/02046 ,  B08B7/0035 ,  C23C16/4405 ,  H01L21/67028 ,  H01L21/67034 ,  Y10S438/905

摘要： The plasma dry cleaning rate of semiconductor process chamber walls can be improved by placing a non-gaseous dry cleaning enhancement material in the position which was occupied by the workpiece during semiconductor processing. The non-gaseous dry cleaning enhancement material is either capable of generating dry cleaning reactive species and/or of reducing the consumption of the dry cleaning reactive species generated from the plasma gas feed to the process chamber.When process chamber non-volatile contaminant deposits are removed from plasma process chamber surfaces during plasma dry cleaning by placing a non-gaseous source of reactive-species-generating material within the plasma process chamber, the non-gaseous source of reactive-species-generating material need not be located upon or adjacent the workpiece support platform: however, this location provides excellent cleaning results in typical process chamber designs.

摘要翻译： 通过在半导体处理期间将非气态干洗增强材料置于被工件占据的位置，可以改善半导体处理室壁的等离子体干洗率。 非气态干洗增强材料能够产生干洗反应物质和/或降低从等离子体气体进料到处理室产生的干洗反应物质的消耗。 当在等离子体干洗期间通过将等离子体处理室内的非气态反应性物质产生材料源放置在等离子体处理室表面中来处理室非挥发性污染物沉积物时，产生非反应性物质的非气态源 材料不必位于工件支撑平台上或邻近工件支撑平台：然而，该位置在典型的工艺室设计中提供了极好的清洁效果。

公开(公告)号：US5628870A

公开(公告)日：1997-05-13

申请号：US458961

申请日：1995-06-05

申请人： Yan Ye ,  Anand Gupta ,  Yuri S. Uritsky

发明人： Yan Ye ,  Anand Gupta ,  Yuri S. Uritsky

IPC分类号： H01L21/68 ,  H01J37/304 ,  H01L21/00 ,  H01L21/02 ,  H01L23/544 ,  B44C1/22

CPC分类号： H01L21/67282 ,  H01J37/3045 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002

摘要： An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

摘要翻译： 适用于标记衬底的装置包括用于保持衬底的保持器和用于使衬底电接地的接地。 至少一个针电极具有位于基底附近的尖端，使得在基底和尖端之间存在间隙。 高电压源向电极尖端提供电流以离子化间隙中的气体，使得电离气体可以撞击并标记衬底。

公开(公告)号：US5622565A

公开(公告)日：1997-04-22

申请号：US585980

申请日：1996-01-16

申请人： Yan Ye ,  Anand Gupta ,  Shamouil Shamouliam

发明人： Yan Ye ,  Anand Gupta ,  Shamouil Shamouliam

IPC分类号： C09D127/18 ,  C09D127/12 ,  C23C14/56 ,  C23C16/44 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  C23C16/00

CPC分类号： H01L21/6715 ,  C23C14/564 ,  C23C16/4404 ,  H01J37/32477 ,  H01L21/67011 ,  H01J2237/022

摘要： The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.

摘要翻译： 本发明提供了一种用于半导体处理的装置，其中连接到腔室的反应室和真空管道装置涂覆有具有低蒸气压和低粘着系数的卤化聚合物材料的膜。 优选的材料包括低分子量聚氟乙烯聚合物，例如聚四氟乙烯和聚氯三氟乙烯。 提供一种方法来防止在加工工件期间在半导体处理室和连接到其上的真空管道装置的涂覆表面上产生污染物积聚。

公开(公告)号：US5608155A

公开(公告)日：1997-03-04

申请号：US496946

申请日：1995-06-30

申请人： Yan Ye ,  Anand Gupta

发明人： Yan Ye ,  Anand Gupta

IPC分类号： G01N21/88 ,  G01N15/06 ,  G01N15/14 ,  G01N21/94 ,  G01N21/95 ,  G01N21/956 ,  H01L21/66 ,  H01S3/00

CPC分类号： G01N15/1468 ,  G01N15/065 ,  G01N21/9501 ,  G01N2015/1493

摘要： The apparent size of sub-micron contaminant particles on a wafer surface is enlarged by selective condensation of a vapor on the particles. The substrate is located proximate to and spaced apart from a liquid vapor source which is heated. The vaporized liquid adheres to the particles, and after a predetermined period of time, condensation of vapor on the substrate is stopped, and the substrate is scanned for detecting the particles.

摘要翻译： 通过颗粒上的蒸气的选择性缩合，晶片表面上的亚微米污染物颗粒的表观尺寸增大。 衬底位于与加热的液体蒸气源相邻并间隔开的位置。 蒸发的液体粘附到颗粒上，并且在预定时间之后，停止在基板上的蒸气冷凝，并且扫描基板以检测颗粒。

公开(公告)号：US5578131A

公开(公告)日：1996-11-26

申请号：US459197

申请日：1995-06-02

申请人： Yan Ye ,  Anand Gupta ,  Shamouil Shamouliam

发明人： Yan Ye ,  Anand Gupta ,  Shamouil Shamouliam

IPC分类号： C09D127/18 ,  C09D127/12 ,  C23C14/56 ,  C23C16/44 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  C23C16/00

CPC分类号： H01L21/6715 ,  C23C14/564 ,  C23C16/4404 ,  H01J37/32477 ,  H01L21/67011 ,  H01J2237/022

摘要： The present invention provides an apparatus for semiconductor processing in which the reactor chamber and the vacuum conduit means connected to the chamber are coated with a film of halogenated polymer material having a low vapor pressure and a low sticking coefficient. Preferred materials include low molecular weight polyfluoroethylene polymers such as polytetrafluoroethylene and polychlorotrifluoro-ethylene. A method is provided to prevent contaminant buildup on coated surfaces of semiconductor processing chambers and vacuum conduit means connected thereto during processing of a workpiece.

摘要翻译： 本发明提供了一种用于半导体处理的装置，其中连接到腔室的反应室和真空管道装置涂覆有具有低蒸气压和低粘着系数的卤化聚合物材料的膜。 优选的材料包括低分子量聚氟乙烯聚合物，例如聚四氟乙烯和聚氯三氟乙烯。 提供一种方法来防止在加工工件期间在半导体处理室和连接到其上的真空管道装置的涂覆表面上产生污染物积聚。

公开(公告)号：US5474640A

公开(公告)日：1995-12-12

申请号：US94653

申请日：1993-07-19

申请人： Yan Ye ,  Anand Gupta ,  Yuri Uritsky

发明人： Yan Ye ,  Anand Gupta ,  Yuri Uritsky

IPC分类号： H01L21/68 ,  H01J37/304 ,  H01L21/00 ,  H01L21/02 ,  H01L23/544 ,  C23F1/02

CPC分类号： H01L21/67282 ,  H01J37/3045 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002

摘要： An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

摘要翻译： 适用于标记衬底的装置包括用于保持衬底的保持器和用于使衬底电接地的接地。 至少一个针电极具有位于基底附近的尖端，使得在基底和尖端之间存在间隙。 高电压源向电极尖端提供电流以离子化间隙中的气体，使得电离气体可以撞击并标记衬底。

公开(公告)号：US09729888B2

公开(公告)日：2017-08-08

申请号：US13394793

申请日：2010-09-07

申请人： Yan Ye ,  Alexandros Tourapis

发明人： Yan Ye ,  Alexandros Tourapis

IPC分类号： H04N7/26 ,  H04N19/192 ,  H04N19/196 ,  H04N19/176 ,  H04N19/147 ,  H04N19/122 ,  H04N19/61 ,  H04N19/11 ,  H04N19/107 ,  H04N19/109 ,  H04N19/126 ,  H04N19/132 ,  H04N19/174 ,  H04N19/17 ,  H04N19/19

CPC分类号： H04N19/192 ,  H04N19/107 ,  H04N19/109 ,  H04N19/11 ,  H04N19/122 ,  H04N19/124 ,  H04N19/126 ,  H04N19/132 ,  H04N19/147 ,  H04N19/17 ,  H04N19/174 ,  H04N19/176 ,  H04N19/19 ,  H04N19/196 ,  H04N19/197 ,  H04N19/61

摘要： Techniques for selecting a coding mode for an image coding process are described. Coding modes can be selected through a coding mode transition state machine, a re-quantization process, selection of an optimal transform size, by skipping some quantization parameters, or by performing motion search.

公开(公告)号：US20160294028A1

公开(公告)日：2016-10-06

申请号：US15079539

申请日：2016-03-24

申请人： Yan Ye

发明人： Yan Ye

IPC分类号： H01M12/08 ,  H01M4/86 ,  H01M4/134 ,  H01M4/04 ,  H01M10/0562 ,  H01M10/054 ,  H01M8/1016 ,  H01M4/46 ,  H01M4/1395

CPC分类号： H01M12/08 ,  H01M4/0492 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/466 ,  H01M4/62 ,  H01M4/624 ,  H01M4/625 ,  H01M4/8663 ,  H01M4/8673 ,  H01M8/1016 ,  H01M10/054 ,  H01M10/0562 ,  H01M2004/027 ,  H01M2004/8689 ,  H01M2300/0071 ,  Y02E60/128

摘要： Solid state battery cells and methods for making the same are provided. In one or more embodiments, a solid state battery cell can include one or more solid state ion conductors disposed between one or more electrodes and one or more counter electrodes. The electrode can include at least 90 at % of magnesium, the counter electrode can be or include one or more electrically conductive materials, and the solid state ion conductor can be or include one or more ion conductive materials. The ion conductive material can be or include one or more magnesium compounds and the counter electrode and the solid state ion conductor can have a combined thickness of about 1 μm to less than 1 mm.

摘要翻译： 提供了固态电池单元及其制造方法。 在一个或多个实施例中，固态电池单元可以包括设置在一个或多个电极和一个或多个对置电极之间的一个或多个固态离子导体。 电极可以包括至少90原子％的镁，对电极可以是或包括一种或多种导电材料，并且固态离子导体可以是或包括一种或多种离子导电材料。 离子导电材料可以是或包括一种或多种镁化合物，并且对电极和固态离子导体可以具有约1μm至小于1mm的组合厚度。