公开(公告)号：US08729652B2

公开(公告)日：2014-05-20

申请号：US12282932

申请日：2007-03-13

申请人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilhelmus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

发明人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilhelmus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

IPC分类号： H01L31/115

CPC分类号： G01T1/2018 ,  H01L27/14659 ,  H01L27/14663 ,  H01L31/115

摘要： The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1). This way the invention provides a semiconductor device (11) for radiation detection in which the influence on the performance of the semiconductor device (11) of ionizing radiation (X), such as X-rays, that penetrates into the substrate region (1) is reduced.

摘要翻译： 本发明提供了一种用于放射线检测的半导体器件（11），其包括诸如硅的衬底半导体材料的衬底区域（1）和在半导体器件（11）的表面处的检测区域（3） 在半导体器件（11）上的电磁辐射（L）入射时，产生并检测出检测区域（3）对第一导电类型（例如电子）的载流子。 半导体器件（11）还包括阻挡半导体材料或隔离材料的阻挡区域（2,5,14），所述阻挡区域（2,5,14）是衬底区域（1）和衬底区域 用于通过诸如X射线的电离辐射（X）穿透而在衬底区域（1）中产生的电荷载体的检测区域（3）。 这样，本发明提供了一种用于放射线检测的半导体器件（11），其中对穿透到衬底区域（1）中的诸如X射线的电离辐射（X）的半导体器件（11）的性能的影响， 降低了。

公开(公告)号：US06348724B1

公开(公告)日：2002-02-19

申请号：US09660916

申请日：2000-09-13

申请人： Joannes Joseph Maria Koomen ,  Wilhelmus Cornelis Maria Peters

发明人： Joannes Joseph Maria Koomen ,  Wilhelmus Cornelis Maria Peters

IPC分类号： H01L27082

CPC分类号： H01L27/0259 ,  H01L27/0255

摘要： The invention relates to a bipolar ESD protection comprising a protection transistor with a short-circuited base emitter (18, 19). Due to the snap-back effect, the transistor can switch from the normal high-ohmic condition to a low-ohmic condition in the case of ESD. To improve the protection performance, the protection structure is provided with a trigger element comprising a second transistor (26, 27, 28) with a lower breakdown voltage. The base (26) and the emitter (28) of the second transistor are connected to the base of the protection transistor. To increase the current carrying capability of the protection device, the trigger transistor is designed so as to be a vertical transistor.

摘要翻译： 本发明涉及一种双极ESD保护，包括具有短路基极发射极（18,19）的保护晶体管。 由于闪回效应，在ESD的情况下，晶体管可以从正常高欧姆状态切换到低欧姆条件。 为了提高保护性能，保护结构设置有包括具有较低击穿电压的第二晶体管（26,27,28）的触发元件。 第二晶体管的基极（26）和发射极（28）连接到保护晶体管的基极。 为了提高保护装置的载流能力，触发晶体管被设计为垂直晶体管。