公开(公告)号：US20090096046A1

公开(公告)日：2009-04-16

申请号：US12282932

申请日：2007-03-13

申请人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilheimus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

发明人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilheimus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

IPC分类号： H01L31/08

CPC分类号： G01T1/2018 ,  H01L27/14659 ,  H01L27/14663 ,  H01L31/115

摘要： The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1). This way the invention provides a semiconductor device (11) for radiation detection in which the influence on the performance of the semiconductor device (11) of ionizing radiation (X), such as X-rays, that penetrates into the substrate region (1) is reduced.

摘要翻译： 本发明提供了一种用于放射线检测的半导体器件（11），其包括诸如硅的衬底半导体材料的衬底区域（1）和在半导体器件（11）的表面处的检测区域（3） 在半导体器件（11）上的电磁辐射（L）入射时，产生并检测出检测区域（3）对第一导电类型（例如电子）的载流子。 半导体器件（11）还包括阻挡半导体材料或隔离材料的阻挡区域（2,5,14），所述阻挡区域（2,5,14）是衬底区域（1）和衬底区域 用于通过诸如X射线的电离辐射（X）穿透而在衬底区域（1）中产生的电荷载体的检测区域（3）。 这样，本发明提供了一种用于放射线检测的半导体器件（11），其中对穿透到衬底区域（1）中的诸如X射线的电离辐射（X）的半导体器件（11）的性能的影响， 降低了。

公开(公告)号：US20090096052A1

公开(公告)日：2009-04-16

申请号：US12282907

申请日：2007-03-09

申请人： Anco Heringa ,  Johannes Albert Luijendijk ,  Joost Willem Christiaan Veltkamp ,  Wibo Daniel Van Noort

发明人： Anco Heringa ,  Johannes Albert Luijendijk ,  Joost Willem Christiaan Veltkamp ,  Wibo Daniel Van Noort

IPC分类号： H01L31/0232

CPC分类号： H04N5/32 ,  H01L27/12 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14659 ,  H01L27/14663 ,  H01L31/02164 ,  H01L31/102 ,  H01L31/115

摘要： The invention provides a semiconductor device (11) for radiation detection in a semiconductor substrate (1) comprising a detection region (3), which detects charge carriers that are generated upon incidence of radiation (X, L) on the semiconductor device (11). The semiconductor device further (11) comprises a further detection region (13), which detects charge carriers that are generated upon incidence of radiation (X) on the semiconductor device (11). A shield (8, 18) extends over the further detection region (13), which prevents electromagnetic radiation (L) from entering the detection region (13). This way the invention provides a semiconductor device (11) for radiation detection in which the separation between the detection of electromagnetic radiation (L) and the detection of other radiation is improved. The invention further provides a detector (10) comprising the semiconductor device (11), and a processor (P) coupled to the detection region (3) and the further detection region (13) for generating an output signal (22) representing the electromagnetic radiation (L).

摘要翻译： 本发明提供一种半导体衬底（1）中用于辐射检测的半导体器件（11），包括检测区域（3），该检测区域检测在半导体器件（11）上的辐射（X，L）入射时产生的电荷载流子， 。 半导体器件还包括另外的检测区域（13），其检测在半导体器件（11）上的辐射（X）入射时产生的电荷载流子。 屏蔽（8,18）延伸越过另外的检测区域（13），防止电磁辐射（L）进入检测区域（13）。 这样，本发明提供了一种用于放射线检测的半导体器件（11），其中电磁辐射（L）的检测与其它辐射的检测之间的间隔被改善。 本发明还提供了一种包括半导体器件（11）的检测器（10）和耦合到检测区域（3）的处理器（P）和用于产生表示电磁波的输出信号（22）的另外的检测区域（13） 辐射（L）。

公开(公告)号：US08729652B2

公开(公告)日：2014-05-20

申请号：US12282932

申请日：2007-03-13

申请人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilhelmus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

发明人： Anco Heringa ,  Erik Jan Lous ,  Wibo Daniel Van Noort ,  Wilhelmus Cornelis Maria Peters ,  Joost Willem Christiaan Veltkamp

IPC分类号： H01L31/115

CPC分类号： G01T1/2018 ,  H01L27/14659 ,  H01L27/14663 ,  H01L31/115

摘要： The invention provides a semiconductor device (11) for radiation detection, which comprises a substrate region (1) of a substrate semiconductor material, such as silicon, and a detection region (3) at a surface of the semiconductor device (11), in which detection region (3) charge carriers of a first conductivity type, such as electrons, are generated and detected upon incidence of electromagnetic radiation (L) on the semiconductor device (11). The semiconductor device (11) further comprises a barrier region (2,5,14) of a barrier semiconductor material or an isolation material, which barrier region (2,5,14) is an obstacle between the substrate region (1) and the detection region (3) for charge carriers that are generated in the substrate region (1) by penetration of ionizing radiation (X), such as X-rays, into the substrate region (1). This way the invention provides a semiconductor device (11) for radiation detection in which the influence on the performance of the semiconductor device (11) of ionizing radiation (X), such as X-rays, that penetrates into the substrate region (1) is reduced.

摘要翻译： 本发明提供了一种用于放射线检测的半导体器件（11），其包括诸如硅的衬底半导体材料的衬底区域（1）和在半导体器件（11）的表面处的检测区域（3） 在半导体器件（11）上的电磁辐射（L）入射时，产生并检测出检测区域（3）对第一导电类型（例如电子）的载流子。 半导体器件（11）还包括阻挡半导体材料或隔离材料的阻挡区域（2,5,14），所述阻挡区域（2,5,14）是衬底区域（1）和衬底区域 用于通过诸如X射线的电离辐射（X）穿透而在衬底区域（1）中产生的电荷载体的检测区域（3）。 这样，本发明提供了一种用于放射线检测的半导体器件（11），其中对穿透到衬底区域（1）中的诸如X射线的电离辐射（X）的半导体器件（11）的性能的影响， 降低了。