公开(公告)号：US5171717A

公开(公告)日：1992-12-15

申请号：US647861

申请日：1991-01-30

申请人： Ronald F. Broom ,  Marcel Gasser ,  Christoph S. Harder ,  Ernst E. Latta ,  Albertus Oosenbrug ,  Heinz Richard ,  Peter Vettiger

发明人： Ronald F. Broom ,  Marcel Gasser ,  Christoph S. Harder ,  Ernst E. Latta ,  Albertus Oosenbrug ,  Heinz Richard ,  Peter Vettiger

IPC分类号： B28D5/00 ,  H01L21/301 ,  H01S5/00 ,  H01S5/02

CPC分类号： B28D5/0029 ,  H01S5/0202 ,  Y10T225/12

摘要： A method for cleaving semiconductor wafers, or segments thereof, which comprises placing the wafer, provided with scribe lines defining the planes where cleaving is to take place, inbetween a pair of flexible transport bands and guiding it around a curved, large radius surface thereby applying a bending moment. With a moment of sufficient magnitude, individual bars are broken off the wafer as this is advanced, the bars having front-and rear-end facets. On cleaving, each bar, while still pressed against the curved surface, is automatically separated whereby mutual damage of the facets of neighboring bars is prevented. For further handling, e.g. for the transport of the bars to an evaporation station for passivation layer deposition, provisions are made to keep the bars separated. Cleaving and the subsequent passivation coating can be carried out in-situ in a vacuum system to prevent facet contamination prior to applying the passivation.

摘要翻译： 一种用于切割半导体晶片或其部分的方法，其包括将设置有限定要进行裂开的平面的切割线的晶片放置在一对柔性传输带之间并将其引导到弯曲的大半径表面上，从而施加 一个弯曲的时刻。 有了足够的时刻，随着这个进步，单个的条被从晶片上分离出来，这些条具有前端和后端方面。 在切割时，每个杆在仍然压靠弯曲表面的同时被自动分离，从而防止相邻杆的小面的相互损坏。 为了进一步处理，例如 为了将棒运送到用于钝化层沉积的蒸发站，进行了保持棒分离的规定。 切割和随后的钝化涂层可以在真空系统中原位进行，以防止在施加钝化之前的小面污染。

公开(公告)号：US5063173A

公开(公告)日：1991-11-05

申请号：US538626

申请日：1990-06-15

申请人： Marcel Gasser ,  Ernst E. Latta

发明人： Marcel Gasser ,  Ernst E. Latta

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/028 ,  H01S5/042 ,  H01L21/203

CPC分类号： H01S5/028 ,  H01S5/0202 ,  H01S5/0281 ,  H01S5/0282 ,  Y10S148/065 ,  Y10S148/095

摘要： A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface.The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

公开(公告)号：US5940424A

公开(公告)日：1999-08-17

申请号：US721072

申请日：1996-09-26

申请人： Hans Peter Dietrich ,  Marcel Gasser ,  Abram Jakubowicz ,  Ernst-Eberhard Latta ,  Peter Roentgen

发明人： Hans Peter Dietrich ,  Marcel Gasser ,  Abram Jakubowicz ,  Ernst-Eberhard Latta ,  Peter Roentgen

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S3/19

CPC分类号： H01S5/028

摘要： A semiconductor laser diode, and a method for producing the semiconductor laser diode, includes a waveguide being terminated by a back facet and a front facet and a front facet coating and a back facet coating having a reflectivity providing for controlled decoupling of light at the front facet from the standing lightwave in the waveguide. The front facet coating includes a stack of layers providing for a phase shift of the standing lightwave within the waveguide such that the intensity of the lightwave at the front facet, where the light is decoupled from the standing lightwave, has a relative minimum.

摘要翻译： 半导体激光二极管和半导体激光二极管的制造方法包括：由后面和前端面端接的波导管和前端面涂层以及具有反射率的背面涂层，该反射率提供用于控制前端的光的去耦 波导中的立体光波的小平面。 前面小面涂层包括一叠层，用于使立体光波在波导内相移，使得光从光源与光源分离的光波的强度具有相对最小值。

公开(公告)号：US4458409A

公开(公告)日：1984-07-10

申请号：US459290

申请日：1983-01-20

申请人： Eberhard Latta ,  Marcel Gasser

发明人： Eberhard Latta ,  Marcel Gasser

IPC分类号： H01L39/24 ,  H01L

CPC分类号： H01L39/2493 ,  Y10S505/922 ,  Y10T29/49014

摘要： A process for reducing the particle current in the sub-gap range of all-Nb Josephson junctions. The process results in junctions having substantially increased values of V.sub.m. In order to reduce the single particle current, the reaction between the barrier layer oxide and the counter electrode is prevented by additional process steps. After forming the tunnel barrier (4) and before depositing the counter electrode (9), the tunnel barrier surface is covered with a thin, non-continuous layer (5) of a material such as gold which is not reacting with oxygen at process conditions. Subsequently, the non-covered barrier layer surface regions (7) are strongly oxidized thereby forming an oxide layer (8) of sufficient thickness to prevent electron tunneling in these regions.

摘要翻译： 一种降低全铌约瑟夫逊结的子间隙范围内的粒子电流的方法。 该过程导致具有显着增加的Vm值的结。 为了减少单个颗粒电流，通过附加的工艺步骤来防止阻挡层氧化物和对电极之间的反应。 在形成隧道势垒（4）之后并且在沉积相对电极（9）之前，隧道势垒表面被薄的非连续层（5）覆盖，所述材料例如金在工艺条件下不与氧反应 。 随后，非覆盖的阻挡层表面区域（7）被强氧化，从而形成足够厚度的氧化物层（8），以防止这些区域中的电子隧穿。

公开(公告)号：US5144634A

公开(公告)日：1992-09-01

申请号：US748317

申请日：1991-08-21

申请人： Marcel Gasser ,  Ernst E. Latta

发明人： Marcel Gasser ,  Ernst E. Latta

IPC分类号： H01S5/02 ,  H01S5/028

CPC分类号： H01S5/028 ,  H01S5/0202 ,  H01S5/0281 ,  H01S5/0282

摘要： A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface. The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.

摘要翻译： 公开了一种在制造半导体激光二极管的过程中钝化反射镜的方法。 该方法的关键步骤是：（1）提供无污染的镜面，然后（2）原位施加连续的绝缘（或低导电）钝化层。 该层由用作与半导体反应但不与反射镜表面反应的杂质的扩散阻挡层形成。 无污染的镜面是通过在无污染的环境中裂开或通过在空气中裂开，随后进行镜面蚀刻和随后的镜面清洁来获得的。 钝化层由Si，Ge或Sb组成。