公开(公告)号：US20090283806A1

公开(公告)日：2009-11-19

申请号：US12121387

申请日：2008-05-15

申请人： Frank Bin YANG ,  Andrew M. WAITE ,  Scott Luning

发明人： Frank Bin YANG ,  Andrew M. WAITE ,  Scott Luning

IPC分类号： H01L29/00 ,  H01L21/336

CPC分类号： H01L21/26586 ,  H01L29/66659 ,  H01L29/7834 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

摘要翻译： 一种用于制造MOSFET（例如，PMOS FET）的方法包括提供具有由（110）表面取向或（110）侧壁表面表征的表面的半导体衬底，在表面上形成栅极结构，并形成源延伸和 半导体衬底中的漏极延伸部相对于栅极结构非对称地定位。 以非零倾角进行离子注入工艺。 在离子注入过程期间，至少一个间隔物和栅电极掩盖表面的一部分，使得源极延伸和漏极延伸通过不对称度量相对于栅极结构不对称地定位。

公开(公告)号：US20110024841A1

公开(公告)日：2011-02-03

申请号：US12904662

申请日：2010-10-14

申请人： Frank Bin YANG ,  Andrew M. WAITE ,  Scott LUNING

发明人： Frank Bin YANG ,  Andrew M. WAITE ,  Scott LUNING

IPC分类号： H01L29/78 ,  H01L25/07

CPC分类号： H01L21/26586 ,  H01L29/66659 ,  H01L29/7834 ,  H01L2924/0002 ,  Y10S438/931 ,  H01L2924/00

摘要： A method for fabricating a MOSFET (e.g., a PMOS FET) includes providing a semiconductor substrate having surface characterized by a (110) surface orientation or (110) sidewall surfaces, forming a gate structure on the surface, and forming a source extension and a drain extension in the semiconductor substrate asymmetrically positioned with respect to the gate structure. An ion implantation process is performed at a non-zero tilt angle. At least one spacer and the gate electrode mask a portion of the surface during the ion implantation process such that the source extension and drain extension are asymmetrically positioned with respect to the gate structure by an asymmetry measure.

摘要翻译： 一种用于制造MOSFET（例如，PMOS FET）的方法包括提供具有由（110）表面取向或（110）侧壁表面表征的表面的半导体衬底，在表面上形成栅极结构，并形成源延伸和 半导体衬底中的漏极延伸部相对于栅极结构非对称地定位。 以非零倾角进行离子注入工艺。 在离子注入过程期间，至少一个间隔物和栅电极掩盖表面的一部分，使得源极延伸和漏极延伸通过不对称度量相对于栅极结构不对称地定位。

公开(公告)号：US20090130803A1

公开(公告)日：2009-05-21

申请号：US12360961

申请日：2009-01-28

申请人： Andrew M. WAITE ,  Scott LUNING

发明人： Andrew M. WAITE ,  Scott LUNING

IPC分类号： H01L21/20

CPC分类号： H01L29/6656 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/6653 ,  H01L29/66636 ,  H01L29/7848

摘要： A stressed field effect transistor and methods for its fabrication are provided. The field effect transistor comprises a silicon substrate with a gate insulator overlying the silicon substrate. A gate electrode overlies the gate insulator and defines a channel region in the silicon substrate underlying the gate electrode. A first silicon germanium region having a first thickness is embedded in the silicon substrate and contacts the channel region. A second silicon germanium region having a second thickness greater than the first thickness and spaced apart from the channel region is also embedded in the silicon substrate.

摘要翻译： 提供了一种应力场效应晶体管及其制造方法。 场效应晶体管包括具有覆盖硅衬底的栅极绝缘体的硅衬底。 栅电极覆盖栅极绝缘体，并且在栅电极下面的硅衬底中限定沟道区。 具有第一厚度的第一硅锗区域嵌入在硅衬底中并与沟道区域接触。 具有大于第一厚度并且与沟道区间隔开的第二厚度的第二硅锗区域也嵌入在硅衬底中。

公开(公告)号：US20080261408A1

公开(公告)日：2008-10-23

申请号：US11738828

申请日：2007-04-23

申请人： Andrew M. WAITE ,  Scott LUNING ,  Frank (Bin) Yang

发明人： Andrew M. WAITE ,  Scott LUNING ,  Frank (Bin) Yang

IPC分类号： H01L21/31

CPC分类号： H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7843

摘要： A method is provided for fabricating a semiconductor device on a semiconductor substrate. A plurality of narrow gate pitch transistors (NPTs) and wide gate pitch transistors (WPTs) are formed on and in the semiconductor substrate. The NPTs are spaced apart by a first distance, and the WPTs are spaced apart by a second distance greater than the first distance. A first stress liner layer is deposited overlying the NPTs, the WPTs and the semiconductor layer, an etch stop layer is deposited overlying the first stress liner layer, and a second stress liner layer is deposited overlying the etch stop layer. A portion of the second stress liner layer which overlies the WPTs is covered, and an exposed portion of the second stress liner layer which overlies the NPTs is removed to expose an exposed portion of the etch stop layer. The exposed portion of the etch stop layer which overlies the NPTs is removed.

摘要翻译： 提供了一种在半导体衬底上制造半导体器件的方法。 在半导体衬底上形成多个窄栅极间距晶体管（NPT）和宽栅极间距晶体管（WPT）。 NPT间隔开第一距离，并且WPT间隔开大于第一距离的第二距离。 沉积覆盖在NPT，WPT和半导体层上的第一应力衬垫层，沉积覆盖在第一应力衬垫层上的蚀刻停止层，并且沉积覆盖在蚀刻停止层上的第二应力衬垫层。 覆盖在WPT上的第二应力衬垫层的一部分被覆盖，并且去除覆盖在NPT上的第二应力衬垫层的暴露部分以露出蚀刻停止层的暴露部分。 去除覆盖在NPT上的蚀刻停止层的暴露部分。

公开(公告)号：US20080251851A1

公开(公告)日：2008-10-16

申请号：US11734673

申请日：2007-04-12

申请人： James N. PAN ,  Sey-Ping SUN ,  Andrew M. WAITE

发明人： James N. PAN ,  Sey-Ping SUN ,  Andrew M. WAITE

IPC分类号： H01L21/8238 ,  H01L29/94

CPC分类号： H01L29/7843 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/517 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848 ,  H01L2924/0002 ,  Y10S438/938 ,  H01L2924/00

摘要： A strain enhanced semiconductor device and methods for its fabrication are provided. One method comprises embedding a strain inducing semiconductor material in the source and drain regions of the device to induce a strain in the device channel. Thin metal silicide contacts are formed to the source and drain regions so as not to relieve the induced strain. A layer of conductive material is selectively deposited in contact with the thin metal silicide contacts, and metallized contacts are formed to the conductive material.

摘要翻译： 提供一种应变增强型半导体器件及其制造方法。 一种方法包括将应变诱导半导体材料嵌入在器件的源极和漏极区域中以在器件沟道中引起应变。 在源极和漏极区域形成薄金属硅化物触点，以免减轻诱发的应变。 选择性地沉积与薄金属硅化物触点接触的导电材料层，并且将金属化触点形成为导电材料。