公开(公告)号：US20080017282A1

公开(公告)日：2008-01-24

申请号：US11804082

申请日：2007-05-17

申请人： Andrew Perry ,  Paul Gilman ,  Wendell Stuber ,  Binu Mathew

发明人： Andrew Perry ,  Paul Gilman ,  Wendell Stuber ,  Binu Mathew

IPC分类号： C22F1/16

CPC分类号： C22C5/04 ,  C22F1/14 ,  C23C14/3414

摘要： A precious metal sputter target has a composition selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium and single-phase alloys thereof. The sputter target's grain structure is at least about 99 percent recrystallized and has a grain size of less than about 200 μm for improving sputter uniformity. The cryogenic method for producing these sputter targets is also effective for improving sputter performance-for silver an gold sputter targets.

摘要翻译： 贵金属溅射靶具有选自铂，钯，铑，铱，钌，锇及其单相合金的组成。 溅射靶的晶粒结构至少约99％重结晶，并且具有小于约200μm的粒度以改善溅射均匀性。 用于制造这些溅射靶的低温方法对于提高溅射性能也是有效的 - 对于银金溅射靶。

公开(公告)号：US20050263570A1

公开(公告)日：2005-12-01

申请号：US10852117

申请日：2004-05-25

申请人： Holger Koenigsmann ,  Andrew Perry ,  Thomas Hunt ,  Paul Gilman

发明人： Holger Koenigsmann ,  Andrew Perry ,  Thomas Hunt ,  Paul Gilman

IPC分类号： B23K35/12

CPC分类号： B23K35/02

摘要： The method forms a sputter target assembly by attaching a sputter target to an insert and applying a bond metal layer between the insert and a backing plate. Then pressing the insert and backing plate together forms a solid state bond with the bond metal layer, attaches the insert to the backing plate and forms at least one cooling channel between the insert and the backing plate.

摘要翻译： 该方法通过将溅射靶附接到插入件并且在插入件和背板之间施加粘合金属层来形成溅射靶组件。 然后将插入物和背板压在一起形成与粘合金属层的固态结合，将插入件附接到背板上，并在插入件和背板之间形成至少一个冷却通道。

公开(公告)号：US20050230011A1

公开(公告)日：2005-10-20

申请号：US10967133

申请日：2004-10-19

申请人： Andrew Perry ,  Paul Gilman ,  Thomas Hunt

发明人： Andrew Perry ,  Paul Gilman ,  Thomas Hunt

IPC分类号： C22F1/00 ,  C22F1/04 ,  C23C14/34 ,  C22C21/00

CPC分类号： C23C14/3414 ,  C22F1/04

摘要： The high-purity aluminum sputter target is at least 99.999 weight percent aluminum and has a grain structure. The grain structure is at least 99 percent recrystallized and has a grain size of less than 200 μm. The method forms high-purity aluminum sputter targets by first cooling a high-purity target blank to a temperature of less than −50 ° C. and then deforming the cooled high-purity target blank introduces intense strain into the high-purity target. After deforming, recrystallizing the grains at a temperature below 200 ° C. forms a target blank having at least 99 percent recrystallized grains. Finally, finishing at a low temperature sufficient to maintain the fine grain size of the high-purity target blank forms a finished sputter target.

摘要翻译： 高纯度铝溅射靶至少为99.999重量％的铝，具有晶粒结构。 晶粒结构至少99％重结晶，粒径小于200μm。 该方法通过首先将高纯度目标坯料冷却至低于-50℃的温度，然后使冷却的高纯度靶材坯料变形，将高应变压制成高纯度靶材，形成高纯度铝溅射靶。 变形后，在低于200℃的温度下使晶粒再结晶，形成具有至少99％再结晶晶粒的靶坯。 最后，在足以维持高纯度靶材坯料的细晶粒尺寸的低温下进行精加工，形成成品溅射靶。

公开(公告)号：US20050133125A1

公开(公告)日：2005-06-23

申请号：US11019713

申请日：2004-12-23

申请人： Andrew Perry ,  Paul Gilman

发明人： Andrew Perry ,  Paul Gilman

IPC分类号： C22F1/00 ,  C22F1/08 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22F1/08

摘要： The sputter target has a composition selected from the group consisting of high-purity copper and copper-base alloys. The sputter target's grain structure is at least about 99 percent recrystallized; and the sputter target's face has a grain orientation ratio of at least about 10 percent each of (111), (200), (220) and (311). In addition, the sputter target has a grain size of less than about 10 μm for improving sputter uniformity and reducing sputter target arcing.

摘要翻译： 溅射靶具有选自高纯度铜和铜基合金的组成。 溅射靶的晶粒结构至少约99％重结晶; 并且溅射靶的面具有（111），（200），（220）和（311）的至少约10％的晶粒取向比。 此外，溅射靶具有小于约10um的晶粒尺寸，以改善溅射均匀性并减少溅射靶电弧。

公开(公告)号：US6160621A

公开(公告)日：2000-12-12

申请号：US409842

申请日：1999-09-30

申请人： Andrew Perry ,  Randall Mundt

发明人： Andrew Perry ,  Randall Mundt

IPC分类号： C23C14/54 ,  C23C16/52 ,  G01B11/06 ,  H01L21/205 ,  H01L21/3065

CPC分类号： G01B11/0683

摘要： An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.

摘要翻译： 一种用于使用提供高瞬时功率脉冲并具有宽光谱宽度的脉冲闪光灯来即时监测薄膜厚度和蚀刻和沉积速率的干涉测量方法和装置。 闪光灯与用于检测从晶片反射的光的光谱仪之间的光路基本上对于可用于计算膜厚度和蚀刻和沉积速率所需波长的软件算法可用的光谱的紫外范围基本上是透射的。

公开(公告)号：US20080014748A1

公开(公告)日：2008-01-17

申请号：US11903210

申请日：2007-09-19

申请人： Andrew Perry

发明人： Andrew Perry

IPC分类号： H01L21/3065

CPC分类号： H01J37/32935 ,  G01N21/272 ,  H01J37/32972 ,  H01L22/26

摘要： A method for determining endpoint of plasma processing of a semiconductor wafer includes providing a light source, and providing a lens system to collimate and align light from the light source to an active surface of the semiconductor wafer. A plurality of light detector fibers are interleaved among light source fibers which transmit light from the light source to the lens system. Reflected light from the active surface of the semiconductor wafer is received by a plurality of light detector fibers and provided to an imaging spectrometer. The received reflected light is analyzed by the imaging spectrometer, and matched to a model optical signal. The matched optical signal is selected to determine endpoint or other state of the plasma processing.

摘要翻译： 一种用于确定半导体晶片的等离子体处理的端点的方法包括提供光源，以及提供透镜系统以将来自光源的光准直和对准到半导体晶片的有源表面。 多个光检测器光纤在将来自光源的光透射到透镜系统的光源光纤之间交错。 来自半导体晶片的有源表面的反射光被多个光检测器光纤接收并提供给成像光谱仪。 所接收的反射光由成像光谱仪分析，并与模型光信号相匹配。 选择匹配的光信号以确定等离子体处理的端点或其他状态。

公开(公告)号：US20050030524A1

公开(公告)日：2005-02-10

申请号：US10636086

申请日：2003-08-06

申请人： Andrew Perry ,  Robert Steger ,  Neil Benjamin

发明人： Andrew Perry ,  Robert Steger ,  Neil Benjamin

IPC分类号： G01C1/00 ,  H01L21/68 ,  G01B11/26

CPC分类号： G01C1/00 ,  H01J2237/30438 ,  H01L21/681

摘要： An optical alignment system for use in a semiconductor processing system is provided. The optical alignment system includes a wafer chuck that has an alignment feature integrated into the top surface of the wafer chuck. In addition, a beam-forming system, which is capable of emitting an optical signal onto the alignment feature, is disposed above the wafer chuck. Also, a detector is included that can detect an amplitude of the optical signal emitted onto the alignment feature. In one aspect, the alignment feature can be a reflective alignment feature that reflects a portion of the optical signal back to the beam detector. In additional aspect, the alignment feature can be a transmittance alignment feature capable of allowing a portion of the optical signal to pass through the wafer chuck to the detector. In this aspect, the detector can be disposed below the wafer chuck.

摘要翻译： 提供一种用于半导体处理系统的光学对准系统。 光学对准系统包括具有集成到晶片卡盘的顶表面中的对准特征的晶片卡盘。 此外，能够将光信号发射到对准特征上的波束形成系统设置在晶片卡盘上方。 而且，包括可以检测发射到对准特征上的光信号的幅度的检测器。 在一个方面，对准特征可以是将光信号的一部分反射回光束检测器的反射对准特征。 在另外的方面，对准特征可以是能够允许光信号的一部分通过晶片卡盘到达检测器的透射率对准特征。 在这方面，检测器可以设置在晶片卡盘的下方。

公开(公告)号：US08555603B1

公开(公告)日：2013-10-15

申请号：US13573153

申请日：2012-08-27

申请人： Andrew Perry

发明人： Andrew Perry

IPC分类号： E04C3/00

CPC分类号： H01Q1/1235

摘要： A device with a base member with a tubular socket attached orthogonal to a first attachment beam and the first attachment beam has a generally rectangular cross section shape. An insert member of an attachment member is inserted in the tubular socket and a second attachment beam is attached orthogonal to the insert member for each beam to be positioned opposed and spaced apart to abut opposite sides of a pole when the socket is positioned on the top of a pole. The first and second attachment beams may have fastening loops attached for attaching cables diagonally between a loop at one of the lower ends of each attachment beam and a loop adjacent the socket or the insert member. Cable adjustment brackets with tightening bolts may be attached to the outside surface of each attachment beam for each cable end attachment for use to tension the cables.

摘要翻译： 具有基部构件的装置具有垂直于第一附接梁的管状插座，并且所述第一附接梁具有大致矩形的横截面形状。 附接构件的插入构件插入管状插座中，并且第二连接梁垂直于插入构件安装，用于每个梁被定位成相对且间隔开以邻接杆的相对侧，当插座定位在顶部 的极点。 第一和第二附接梁可以具有紧固环，该紧固环用于将电缆对角地连接在每个附接梁的一个下端处的环之间以及邻近插座或插入构件的环路之间。 具有紧固螺栓的电缆调节支架可以连接到用于每个电缆端部附件的每个附接梁的外表面，以用于拉紧电缆。

公开(公告)号：US20050020073A1

公开(公告)日：2005-01-27

申请号：US10625243

申请日：2003-07-22

申请人： Andrew Perry

发明人： Andrew Perry

IPC分类号： G01N21/27 ,  H01J37/32 ,  H01L20060101 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461

CPC分类号： H01J37/32935 ,  G01N21/272 ,  H01J37/32972 ,  H01L22/26

摘要： A method for determining endpoint of plasma processing of a semiconductor wafer includes providing a light source, and providing a lens system to collimate and align light from the light source to an active surface of the semiconductor wafer. A plurality of light detector fibers are interleaved among light source fibers which transmit light from the light source to the lens system. Reflected light from the active surface of the semiconductor wafer is received by a plurality of light detector fibers and provided to an imaging spectrometer. The received reflected light is analyzed by the imaging spectrometer, and matched to a model optical signal. The matched optical signal is selected to determine endpoint or other state of the plasma processing.

摘要翻译： 一种用于确定半导体晶片的等离子体处理的端点的方法包括提供光源，以及提供透镜系统以将来自光源的光准直和对准到半导体晶片的有源表面。 多个光检测器光纤在将来自光源的光透射到透镜系统的光源光纤之间交错。 来自半导体晶片的有源表面的反射光被多个光检测器光纤接收并提供给成像光谱仪。 所接收的反射光由成像光谱仪分析，并与模型光信号相匹配。 选择匹配的光信号以确定等离子体处理的端点或其他状态。

公开(公告)号：USRE39145E1

公开(公告)日：2006-06-27

申请号：US10603740

申请日：2003-06-26

申请人： Andrew Perry ,  Randall Mundt

发明人： Andrew Perry ,  Randall Mundt

IPC分类号： G01B11/06

CPC分类号： G01B11/0683

摘要： An interferometric method and apparatus for in-situ monitoring of a thin film thickness and of etch and deposition rates using a pulsed flash lamp providing a high instantaneous power pulse and having a wide spectral width. The optical path between the flash lamp and a spectrograph used for detecting light reflected from a wafer is substantially transmissive to the ultraviolet range of the spectrum making available to the software algorithms operable to calculate film thickness and etch and deposition rates desirable wavelengths.