公开(公告)号：US4113928A

公开(公告)日：1978-09-12

申请号：US788572

申请日：1977-04-18

申请人： Anil V. Virkar ,  Mark L. Miller ,  Ivan B. Cutler ,  Ronald S. Gordon

发明人： Anil V. Virkar ,  Mark L. Miller ,  Ivan B. Cutler ,  Ronald S. Gordon

IPC分类号： C01F7/02 ,  C04B35/113 ,  H01M10/39 ,  H01M6/18

CPC分类号： H01M10/3918 ,  C01F7/02 ,  C01F7/028 ,  C04B35/113 ,  C01P2004/52 ,  C01P2004/61 ,  C01P2006/10 ,  C01P2006/40

摘要： Methods of preparing a dense and strong polycrystalline .beta."-alumina-containing ceramic body exhibiting an electrical resistivity for sodium ion conduction at 300.degree. C of 9 ohm-cm or lower obtained directly after sintering and having a controlled fine microstructure exhibiting a uniform grain size under 50 micrometers. The invention more particularly relates to methods of uniformly distributing selected metal ions having a valence not greater than 2, e.g. lithium or magnesium, uniformly throughout the beta-type alumina composition prior to sintering to form .beta."-alumina. This uniform distribution allows more complete conversion of .beta.-alumina to .beta."-alumina during sintering. As a result, the polycrystalline .beta."-alumina containing ceramic bodies obtained by methods of this invention exhibit high density, low porosity, high strength, fine grain size (i.e. no grains over 25-50 micrometers with an average size under 5-10 micrometers), low electrical resistivity and a high resistance to degradation by water vapor in an ambient atmosphere.

公开(公告)号：US4138455A

公开(公告)日：1979-02-06

申请号：US787821

申请日：1977-04-15

申请人： Mohammed N. Shaikh ,  Ivan B. Cutler ,  Anil V. Virkar ,  Ronald S. Gordon

发明人： Mohammed N. Shaikh ,  Ivan B. Cutler ,  Anil V. Virkar ,  Ronald S. Gordon

IPC分类号： C04B35/113 ,  H01M10/39 ,  C04B35/10

CPC分类号： H01M10/3918 ,  C04B35/113

摘要： A method is disclosed for preparing a dense, B"-alumina-containing ceramic body exhibiting an electrical resistivity for sodium ion conduction at 300.degree. C. between about 3 and about 20 ohm-cm, by sintering a green ceramic body formed from a composition comprising at least about 90 weight percent of aluminum oxide, about 8.7 to 9.4 weight percent of sodium oxide, about 0.7-0.9 weight percent of lithium oxide, and from 0.0 to about 4.0 weight percent of magnesium oxide at a temperature between about 1400.degree. C. and about 1600.degree. C., for between about three (3) minutes and about 180 minutes to obtain a body containing both B and B"-alumina crystalline forms. The sintered body exhibits a density greater than 90% of theoretical for polycrystalline B"-alumina and a uniform grain size between about 20 and 100 micrometers. All of these compositions were prepared by using either a binary liquid forming mixture between sodium aluminate (NaAlO.sub.2) and lithium aluminate (LiAlO.sub.2), a ternary liquid forming mixture between sodium aluminate, lithium aluminate and B"-Al.sub.2 O.sub.3, or a ternary liquid forming ingredient between magnesium aluminate (MgAl.sub.2 O.sub.4), sodium aluminate and lithium aluminate, in combination with different alpha alumina powders with a range of crystallite sizes (0.3 - 5 micrometer). Depending on the state of aggregation of and the preparative technique for the liquid forming mixtures and the particle size and distribution of the alumina, resistivities (at 300.degree. C.) after sintering varied between extremes of 18-20 ohm-cm on the high side and 3-5 ohm-cm on the low side. Conditions which maximize the sintered density and minimize the resistivity for the lowest possible temperature are those preparations consisting of a fine binary or ternary liquid forming ingredient mixed with a calcined Na.sub.2 CO.sub.3 -Al.sub.2 O.sub.3 mixture. Attainment of these properties is enhanced with the use of an alpha-Al.sub.2 O.sub.3 with a wide particle size distribution (i.e., a size range of 0.3 to 6 micrometers) and an average particle size of about 5 micrometers. These low temperatures of sintering simultaneously help curtail the evaporation of soda and make an open air sintering process feasible.

公开(公告)号：US4013477A

公开(公告)日：1977-03-22

申请号：US600260

申请日：1975-07-30

申请人： Arun D. Jatkar ,  Ivan B. Cutler ,  Anil V. Virkar ,  Ronald S. Gordon

发明人： Arun D. Jatkar ,  Ivan B. Cutler ,  Anil V. Virkar ,  Ronald S. Gordon

IPC分类号： C04B35/113 ,  H01M10/39 ,  C04B35/10

CPC分类号： H01M10/3918 ,  C04B35/113

摘要： A method for preparing a dense and strong polycrystalline .beta."-alumina-containing ceramic body exhibiting an elecrical resistivity at 300.degree. C of 5 ohm-cm or lower, and a controlled and uniform grain size under 50 micrometers, comprising:A. preparing fully converted .beta."-alumina seeds;B. mechanically mixing in the above-mentioned .beta."-alumina seeds with a matrix powder of a composition consistent with the formation of .beta."-alumina upon sintering; andC. sintering at about 1600.degree. C for less than 10 minutes in an open-air atmosphere or under noble metal encapsulation, a green ceramic body formed from the powder mixture of which one ingredient is the .beta."-alumina seeds and the other ingredient is the matrix powder of a composition consistent with the formation of .beta."-alumina.The polycrystalline .beta."-alumina-containing ceramic bodies obtained by the method of this invention exhibit high density, low porosity, high strength, fine grain size, and low electrical resistivity. Such polycrystalline .beta."-alumina-containing bodies are ideally suited for use as solid reaction zone separator or solid elecrolyte in certain electrical conversion devices.

摘要翻译： 一种用于制备在300℃下具有5欧姆 - 厘米或更低的电阻率和50微米以下受控且均匀的晶粒尺寸的致密且强的多晶β' - 氧化铝陶瓷体的方法，包括：

公开(公告)号：US4118464A

公开(公告)日：1978-10-03

申请号：US766157

申请日：1977-02-07

申请人： Ivan B. Cutler

发明人： Ivan B. Cutler

IPC分类号： C01B31/36 ,  C01B33/113 ,  C01B33/26 ,  C01F7/30 ,  C01G25/02 ,  C04B35/622

CPC分类号： C01F7/30 ,  C01B31/36 ,  C01B33/113 ,  C01B33/26 ,  C01G25/02 ,  C04B35/62227 ,  C01P2004/02 ,  C01P2004/10

摘要： A process for removing silicon from a silicate-bearing material. The silicate-bearing material is analyzed for its silicon content and mixed with a controlled quantity of carbon as indicated by the analysis. The carbon is limited to an amount less than the stoichiometric amount necessary to react with the silicon to form silicon carbide. The silicate-bearing material/carbon mixture is formed into a first phase and interposed with a second phase containing additional carbon to form a reaction mixture. The reaction mixture is subjected to a carbothermal reduction reaction to reduce silica in the silicate-bearing material to silicon monoxide. At the temperatures involved in the reaction, the silicon monoxide is in the gaseous phase and readily diffuses from the first phase into the second phase where the diffused silicon monoxide reacts with the additional carbon in the second phase to form silicon carbide. The silicon carbide formation reaction occurs in the gaseous phase so that the silicon carbide is deposited in the second phase in the form of fine fibers. The silicon carbide fibers may be separated from the reaction mixture residue by conventional mechanical separation techniques. The first phase residue has a reduced silica content and may also be mechanically separated from the second phase.

摘要翻译： 从含硅酸盐材料中去除硅的方法。 分析含硅酸盐材料的硅含量，并与受控量的碳混合，如分析所示。 碳被限制在小于与硅反应形成碳化硅所需的化学计量量的量。 将含硅酸盐的材料/碳混合物形成第一相并插入含有另外的碳的第二相以形成反应混合物。 将反应混合物进行碳热还原反应以将含硅酸盐材料中的二氧化硅还原成一氧化硅。 在反应中涉及的温度下，一氧化硅处于气相并容易从第一相扩散到第二相，其中扩散的一氧化硅与第二相中的附加碳反应形成碳化硅。 碳化硅形成反应发生在气相中，使得碳化硅以细纤维的形式沉积在第二相中。 可以通过常规的机械分离技术将碳化硅纤维与反应混合物残留物分离。 第一相残余物具有降低的二氧化硅含量并且还可以与第二相机械分离。

公开(公告)号：US3960581A

公开(公告)日：1976-06-01

申请号：US465222

申请日：1974-04-29

申请人： Ivan B. Cutler

发明人： Ivan B. Cutler

IPC分类号： C01B21/082 ,  C04B35/597 ,  C04B35/58

CPC分类号： C04B35/597 ,  C01B21/0826

摘要： A method of producing a sinterable refractory material having a low coefficient of thermal expansion and comprising essentially a dispersion of aluminum oxide throughout a silicon nitride matrix, herein called SIALON. The process includes obtaining aluminum and silicon from generally readily available raw material sources.

摘要翻译： 一种制造具有低热膨胀系数的可烧结耐火材料的方法，并且基本上包括氧化铝在整个氮化硅基体中的分散体，这里称为SIALON。 该方法包括从通常容易获得的原料来源获得铝和硅。

公开(公告)号：US4141740A

公开(公告)日：1979-02-27

申请号：US880414

申请日：1978-02-23

申请人： Ivan B. Cutler ,  Patrick D. Miller

发明人： Ivan B. Cutler ,  Patrick D. Miller

IPC分类号： C04B35/111 ,  C04B35/565 ,  C04B35/581 ,  C04B35/52 ,  C04B35/58

CPC分类号： C04B35/565 ,  C04B35/111 ,  C04B35/581

摘要： A solid solution and a process for producing a solid solution, the solid solution including at least the compounds: silicon carbide and aluminum oxycarbide, and also aluminum nitride. The new material including all three compounds is referred to by the acronym, SiCAlON, which is a coined term consisting of the chemical abbreviations for the elements present in the solid solution. The solid solution is obtained by heating an intimate mixture of reactants above about 1550.degree. C. The silicon carbide in the solid solution has the alpha or hexagonal structure and the aluminum nitride has the wurtzite or hexagonal structure. The solid solution is characterized by the substantial absence of iron or other impurities that tend to encourage the formation of silicon carbide as a separate phase having a beta or cubic structure.

摘要翻译： 固体溶液和固溶体的制备方法，所述固溶体至少包括化合物：碳化硅和碳酸氢铝，以及氮化铝。 包括所有三种化合物的新材料由首字母缩略词SiCAlON提及，SiCAlON是由固溶体中存在的元素的化学缩写构成的创建术语。 通过将反应物的紧密混合物加热到约1550℃以上获得固溶体。固溶体中的碳化硅具有α或六方结构，并且氮化铝具有纤锌矿或六方结构。 固溶体的特征在于基本上不存在铁或其它杂质，其倾向于促进形成碳化硅作为具有β或立方结构的单独相。