公开(公告)号：US11746257B2

公开(公告)日：2023-09-05

申请号：US16958391

申请日：2018-12-26

申请人： Anji Microelectronics (Shanghai) Co., Ltd.

发明人： Jian Ma ,  Jianfen Jing ,  Junya Yang ,  Kai Song ,  Xinyuan Cai ,  Guohao Wang ,  Ying Yao ,  Pengcheng Bian

IPC分类号： C09G1/02 ,  H01L21/306 ,  H01L21/321

CPC分类号： C09G1/02 ,  H01L21/30625 ,  H01L21/3212

摘要： The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.