摘要:
An Y-ray detector apparatus comprises an array of detector pixels arranged into a plurality of sub-arrays. The pixels in each sub-array share a common dose sensing output provided to a dose sensing output conductor which extends to a periphery of the pixel array. The dose sensing output conductor for one sub-array of pixels passes through the area occupied by another sub-array of pixels, which can lead to unwanted cross talk. The invention provides a plurality of additional screening electrodes, with a screening electrode substantially adjacent the dose sensing output conductor for each sub-array of pixels. These screening electrodes reduce cross talk between the dose sensing output and other pixel electrodes. In another arrangement, each pixel further comprises a pixel electrode for each pixel formed at an upper region of the array, and the dose sensing output conductors are formed at a lower regon of the array. An intermediate conductor layer is then provided which overlaps the dose sensing output conductors for other sub-arrays of pixels and which pass through the area occupied by the sub-array of pixels.
摘要:
An Y-ray detector apparatus comprises an array of detector pixels arranged into a plurality of sub-arrays. The pixels in each sub-array share a common dose sensing output provided to a dose sensing output conductor which extends to a periphery of the pixel array. The dose sensing output conductor for one sub-array of pixels passes through the area occupied by another sub-array of pixels, which can lead to unwanted cross talk. The invention provides a plurality of additional screening electrodes, with a screening electrode substantially adjacent the dose sensing output conductor for each sub-array of pixels. These screening electrodes reduce cross talk between the dose sensing output and other pixel electrodes. In another arrangement, each pixel further comprises a pixel electrode for each pixel formed at an upper region of the array, and the dose sensing output conductors are formed at a lower region of the array. An intermediate conductor layer is then provided which overlaps the dose sensing output conductors for other sub-arrays of pixels and which pass through the area occupied by the sub-array of pixels.
摘要:
An x-ray detector and its pixel circuit are described, that allow to cover a large dynamic range with automatic selection of the sensitivity setting in each pixel, thus providing improved signal to noise ratio with all exposure levels. X-ray detectors are required to cover a large dynamic range. The largest exposure determines the required pixel capacitance. However, a large pixel capacitance gives a bad signal to noise ratio with small exposures e.g. in the dark parts of the image. This invention disclosure describes several approaches to provide automatic sensitivity selection in the pixels. This ensures that low signals are stored in a small capacitor or read out with a high sensitivity with corresponding good signal to noise ratio, while larger signals are stored in larger capacitors or are read out with lower sensitivity so that no information is lost.
摘要:
An x-ray detector and its pixel circuit are described, that allow to cover a large dynamic range with automatic selection of the sensitivity setting in each pixel, thus providing improved signal to noise ratio with all exposure levels. X-ray detectors are required to cover a large dynamic range. The largest exposure determines the required pixel capacitance. However, a large pixel capacitance gives a bad signal to noise ratio with small exposures e.g. in the dark parts of the image. This invention disclosure describes several approaches to provide automatic sensitivity selection in the pixels. This ensures that low signals are stored in a small capacitor or read out with a high sensitivity with corresponding good signal to noise ratio, while larger signals are stored in larger capacitors or are read out with lower sensitivity so that no information is lost.
摘要:
According to an embodiment of the invention, signals coming from a number of pixels or sub-pixels are compared and those signals from pixels or sub-pixels, which are substantially brighter than the other pixels in the comparison, are excluded from contributing to the output signal, to suppress direct detection events in X-ray detectors. For this an X-ray detector apparatus (101) can comprise: —an array (102) of pixel arrangements (303), —each pixel arrangement (303) comprising at least one radiation collection device (311) for converting incident radiation into a collection device signal, —switching arrangements (313, 324, 314, 142; 313, 315, 314, 352, 142; 313, 315, 314; 361) for providing to respectively one output element (141) a signal derived from the collection device signals of a plurality of radiation collection devices (311) of at least one pixel arrangement (303).
摘要:
According to an embodiment of the invention, signals coming from a number of pixels or sub-pixels are compared and those signals from pixels or sub-pixels, which are substantially brighter than the other pixels in the comparison, are excluded from contributing to the output signal, to suppress direct detection events in X-ray detectors. For this an X-ray detector apparatus (101) can comprise: —an array (102) of pixel arrangements (303), —each pixel arrangement (303) comprising at least one radiation collection device (311) for converting incident radiation into a collection device signal, —switching arrangements (313, 324, 314, 142; 313, 315, 314, 352, 142; 313, 315, 314; 361) for providing to respectively one output element (141) a signal derived from the collection device signals of a plurality of radiation collection devices (311) of at least one pixel arrangement (303).
摘要:
A radiation detector comprises an electrode structure, a planarising layer being disposed over the electrode structure and a protective stack which covers the planarising layer. The planarising layer evens out substantial differences between levels of the electrode structure above the substrate on which the electrode structure is disposed. Consequently, cracks, weak spots and other defects in the protective stack are to a large extent avoided. Because the planarising layer covers essentially the entire electrode structure, practically all sources of defects, notably cracks, in the protective stack are avoided.
摘要:
A memory cell is read by first charging a pair of bit lines to given positive potentials and then raising the potential of a cell access line to render access transistors conductive. The cell supply voltage is sufficient to cause substantial hot-electron stress in the n-channel transistors of the cell if it were applied directly across their source-drain paths while they were conductive. However, a limit is imposed on the maximum positive potentials which are applied to the bit lines from the exterior, and on the minimum ratio of the sizes of the cell n-channel amplifier transistors to the sizes of the access transistors, taking into account the threshold voltages of the amplifier transistors, and as a result substantial hot-electron stress does not occur. Substantial hot-electron stress is also prevented during a write operation by arranging that this is effectively preceded by a read operation.
摘要:
A tiled detector assembly (1000) and a method for making a tiled radiation detector (1000) is described. The innovative feature of this method is that the xyz misalignment of the detector tiles (304, 304′), the origin of various image artifacts, can be significantly reduced by accurate sizing and alignment of the detector tiles (304, 304′). Consequently, image quality, yield and reliability of as-produced tiled radiation detectors are considerably improved.
摘要:
A gate circuit includes an N-channel and a P-channel insulated gate field-effect transistor whose parallel-connected drain-source paths constitute an analog signal gate and a control circuit, connected to the respective gate electrodes, to turn on and/or turn off the two field-effect transistors. In order to handle signals whose voltage value is higher than the maximum permissible drain-source voltage in the on-state of the N-channel field-effect transistor, means are provided, for turning on the N-channel field-effect transistor at least at a drain-source voltage below a predetermined value. In an embodiment of the invention the means include delay means coupled to the control circuit for turning on the N-channel field-effect transistor with a delay relative to the P-channel field-effect transistor. In another embodiment of the invention the means include switching means arranged in series with the analog signal gate, for temporarily connecting the signal gate to at least one auxiliary voltage.