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    Method for enhanced uni-directional diffusion of metal and subsequent silicide formation
    1.
    发明授权
    Method for enhanced uni-directional diffusion of metal and subsequent silicide formation 失效
    用于增强金属的单向扩散和随后的硅化物形成的方法

    公开(公告)号：US07208414B2

    公开(公告)日：2007-04-24

    申请号：US10711365

    申请日：2004-09-14

    申请人： Anthony G. Domenicucci ,  Bradley P. Jones ,  Christian Lavoie ,  Robert J. Purtell ,  Yun Yu Wang ,  Kwong Hon Wong

    发明人： Anthony G. Domenicucci ,  Bradley P. Jones ,  Christian Lavoie ,  Robert J. Purtell ,  Yun Yu Wang ,  Kwong Hon Wong

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.

    摘要翻译： 本发明提供了一种通过使用含金属的硅合金与进行两个不同的热循环的第一次退火相结合的方法来增强金属在硅化过程中的单向扩散。 第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层中的温度下进行。 第一热循环导致形成含非晶态金属的硅化物。 第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物的温度下进行。 在第一退火之后，执行选择性蚀刻以从结构中除去任何未反应的含金属合金层。 执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物相。 提供了一种金属硅化物，其厚度是自限制的。

    STRUCTURE AND METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF COBALT SILICIDE
    2.
    发明申请
    STRUCTURE AND METHOD FOR ENHANCED UNI-DIRECTIONAL DIFFUSION OF COBALT SILICIDE 失效
    碳酸硅酮增强单向扩散的结构与方法

    公开(公告)号：US20060057844A1

    公开(公告)日：2006-03-16

    申请号：US10711365

    申请日：2004-09-14

    申请人： Anthony Domenicucci ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun Yu Wang ,  Kwong Hon Wong

    发明人： Anthony Domenicucci ,  Bradley Jones ,  Christian Lavoie ,  Robert Purtell ,  Yun Yu Wang ,  Kwong Hon Wong

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L29/665

    摘要： The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.

    摘要翻译： 本发明提供了一种通过使用含金属的硅合金与进行两个不同的热循环的第一次退火相结合的方法来增强金属在硅化过程中的单向扩散。 第一退火的第一热循环在能够增强金属例如Co和/或Ni的单向扩散到含Si层中的温度下进行。 第一热循环导致形成含非晶态金属的硅化物。 第二热循环在将含非晶态金属的硅化物转化为与含金属的硅合金层或纯金属含有层相比基本上不可蚀刻的结晶的富含金属的硅化物的温度下进行。 在第一退火之后，执行选择性蚀刻以从结构中除去任何未反应的含金属合金层。 执行第二退火以将由第一退火的两个热循环形成的富金属硅化物相转换成处于其最低电阻相的金属硅化物相。 提供了一种金属硅化物，其厚度是自限制的。

    Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi
    4.
    发明授权
    Pre-anneal of CoSi, to prevent formation of amorphous layer between Ti-O-N and CoSi 失效
    CoSi的预退火，以防止在Ti-O-N和CoSi之间形成非晶层

    公开(公告)号：US06878624B1

    公开(公告)日：2005-04-12

    申请号：US10674645

    申请日：2003-09-30

    申请人： John Bruley ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Tina J. Wagner ,  Yun Yu Wang ,  Horati S. Wildman ,  Wong Kwong Hon

    发明人： John Bruley ,  Cyril Cabral, Jr. ,  Christian Lavoie ,  Tina J. Wagner ,  Yun Yu Wang ,  Horati S. Wildman ,  Wong Kwong Hon

    IPC分类号： H01L21/336 ,  H01L21/44 ,  H01L21/768 ,  H01L23/52

    CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76855 ,  H01L21/76856 ,  H01L29/665

    摘要： The present invention provides a method for forming an interconnect to a cobalt or nickel silicide having a TiN diffusion barrier. The inventive method comprises providing an initial structure having vias to exposed silicide regions positioned on a substrate; annealing the initial structure in a nitrogen-containing ambient, wherein a nitrogen passivation layer is formed atop the exposed silicide region; depositing Ti atop the nitrogen passivation layer; annealing the Ti in a nitrogen-containing ambient to form a TiN diffusion barrier and an amorphous Ti cobalt silicide between the TiN diffusion layer and the cobalt or nickel silicide and depositing an interconnect metal within the vias and atop the TiN diffusion barrier. The nitrogen passivation layer substantially restricts diffusion between the Ti and silicide layers minimizing the amorphous Ti cobalt silicide layer that forms. Therefore, the amorphous Ti cobalt or Ti nickel silicide is restricted to a thickness of less than about 3.0 nm.

    摘要翻译： 本发明提供一种用于形成具有TiN扩散阻挡层的钴或镍硅化物的互连的方法。 本发明的方法包括提供具有通孔的初始结构，以暴露出位于基板上的硅化物区域; 在含氮环境中退火初始结构，其中在暴露的硅化物区域上形成氮钝化层; 在氮钝化层顶上沉积Ti; 在含氮环境中退火Ti以在TiN扩散层和钴或镍硅化物之间形成TiN扩散阻挡层和非晶Ti钴硅化物，并在通孔内和TiN扩散势垒顶上沉积互连金属。 氮钝化层基本上限制了Ti和硅化物层之间的扩散，使形成的无定形Ti钴硅化物层最小化。 因此，非晶Ti钴或Ti镍硅化物被限制在小于约3.0nm的厚度。

    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
    5.
    发明授权
    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy 失效
    使用金属锗合金降低金属硅化物的接触电阻的方法和结构

    公开(公告)号：US06331486B1

    公开(公告)日：2001-12-18

    申请号：US09519897

    申请日：2000-03-06

    申请人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    发明人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    IPC分类号： H01L244

    CPC分类号： H01L21/28518

    摘要： A method of reducing contact resistance of metal silicides to a silicon-containing substrate is provided. The method includes first forming a metal germanium layer over a silicon-containing substrate. An optionally oxygen barrier layer may be formed over the metal germanium layer. Next, the structure containing the metal germanium layer is annealed at a temperature effective in converting at least a portion of the metal germanium layer into a substantially non-etchable metal silicide layer, while forming a Si-Ge interlayer between the substrate and the silicide layer. After annealing, the optional oxygen barrier layer and any remaining metal germanium layer is removed from the substrate.

    摘要翻译： 提供了一种降低金属硅化物与含硅衬底的接触电阻的方法。 该方法包括首先在含硅衬底上形成金属锗层。 可以在金属锗层上形成任选的氧阻挡层。 接下来，含有金属锗层的结构在有效地将金属锗层的至少一部分转化为基本上不可蚀刻的金属硅化物层的同时，在衬底和硅化物层之间形成Si-Ge中间层的温度下进行退火 。 在退火之后，从衬底去除可选的氧阻挡层和任何剩余的金属锗层。

    Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging
    6.
    发明授权
    Method for self-aligned formation of silicide contacts using metal silicon alloys for limited silicon consumption and for reduction of bridging 有权
    使用金属硅合金自发对准形成硅化物接触的方法，用于有限的硅消耗和减少桥接

    公开(公告)号：US06323130B1

    公开(公告)日：2001-11-27

    申请号：US09515033

    申请日：2000-03-06

    申请人： Stephen Bruce Brodsky ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Patricia Ann O'Neil ,  Yun Yu Wang

    发明人： Stephen Bruce Brodsky ,  Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Patricia Ann O'Neil ,  Yun Yu Wang

    IPC分类号： H01L2144

    CPC分类号： H01L29/665 ,  H01L21/28518

    摘要： A method of substantially reducing Si consumption and bridging during metal silicide contact formation comprising the steps of: (a) forming a metal silicon alloy layer over a silicon-containing substrate containing an electronic device to be electrically contacted, said silicon in said alloy layer being less than about 30 atomic % and said metal is Co, Ni or mixtures thereof; (b) annealing said metal silicon alloy layer at a temperature of from about 300° to about 500° C. so as to form a metal rich silicide layer that is substantially non-etchable compared to said metal silicon alloy or pure metal; (c) selectively removing any non-reacted metal silicon alloy over non-silicon regions; and (d) annealing said metal rich silicide layer under conditions effective in forming a metal silicide phase that is in its lowest resistance phase. An optional oxygen barrier layer may be formed over the metal silicon alloy layer prior to annealing step (b).

    摘要翻译： 一种在金属硅化物接触形成期间显着降低Si消耗和桥接的方法，包括以下步骤：（a）在含有电接触的电子器件的含硅衬底上形成金属硅合金层，所述合金层中的所述硅为 小于约30原子％，所述金属为Co，Ni或其混合物; （b）在约300℃至约500℃的温度下退火所述金属硅合金层，以便与所述金属硅合金或纯金属相比形成基本不可蚀刻的富金属硅化物层; （c）在非硅区域上有选择地去除任何未反应的金属硅合金; 和（d）在有效形成处于其最低电阻相的金属硅化物相的条件下退火所述富金属硅化物层。 可以在退火步骤（b）之前在金属硅合金层上形成任选的氧阻挡层。

    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
    8.
    发明授权
    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy 有权
    使用金属锗合金降低金属硅化物的接触电阻的方法和结构

    公开(公告)号：US07102234B2

    公开(公告)日：2006-09-05

    申请号：US10827064

    申请日：2004-04-19

    申请人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    发明人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    IPC分类号： H01L23/48 ,  H01L29/40

    CPC分类号： H01L21/28518

    摘要： A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g., Co—Ge or Ti—Ge, two annealing steps are required to provide the lowest resistance phase of those metals, whereas, when Ni is employed, a single annealing step forms the lowest resistance phase of Ni silicide.

    摘要翻译： 一种降低金属硅化物与衬底的p +硅区域或n +硅区域的接触电阻的方法，包括：（a）在含硅衬底上形成金属锗（Ge）层，其中所述金属选自 由Co，Ti，Ni及其混合物组成的组; （b）任选地在所述金属锗层上形成氧阻隔层; （c）在有效地将其至少一部分转化成基本上不可蚀刻的金属硅化物层的温度下退火所述金属锗层，同时在所述含硅衬底和所述基本上不可蚀刻的衬底之间形成Si-Ge中间层 金属硅化物层; 和（d）去除所述任选的氧气阻挡层和任何剩余的合金层。 当使用Co或Ti合金时，例如Co-Ge或Ti-Ge，需要两个退火步骤来提供这些金属的最低电阻相，而在使用Ni时，单个退火步骤形成最低的电阻相 的Ni硅化物。

    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy
    10.
    发明授权
    Method and structure for reduction of contact resistance of metal silicides using a metal-germanium alloy 有权
    使用金属锗合金降低金属硅化物的接触电阻的方法和结构

    公开(公告)号：US06753606B2

    公开(公告)日：2004-06-22

    申请号：US09994954

    申请日：2001-11-27

    申请人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    发明人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  James McKell Edwin Harper ,  Christian Lavoie ,  Ronnen Andrew Roy ,  Yun Yu Wang

    IPC分类号： H01L2348

    CPC分类号： H01L21/28518

    摘要： A method of reducing the contact resistance of metal silicides to the p+ silicon area or the n+ silicon area of the substrate comprising: (a) forming a metal germanium (Ge) layer over a silicon-containing substrate, wherein said metal is selected from the group consisting of Co, Ti, Ni and mixtures thereof; (b) optionally forming an oxygen barrier layer over said metal germanium layer; (c) annealing said metal germanium layer at a temperature which is effective in converting at least a portion thereof into a substantially non-etchable metal silicide layer, while forming a Si—Ge interlayer between said silicon-containing substrate and said substantially non-etchable metal silicide layer; and (d) removing said optional oxygen barrier layer and any remaining alloy layer. When a Co or Ti alloy is employed, e.g., Co—Ge or Ti—Ge, two annealing steps are required to provide the lowest resistance phase of those metals, whereas, when Ni is employed, a single annealing step forms the lowest resistance phase of Ni silicide.

    摘要翻译： 一种降低金属硅化物与衬底的p +硅区域或n +硅区域的接触电阻的方法，包括：（a）在含硅衬底上形成金属锗（Ge）层，其中所述金属选自 由Co，Ti，Ni及其混合物组成的组; （b）任选地在所述金属锗层上形成氧阻隔层; （c）在有效地将其至少一部分转化成基本上不可蚀刻的金属硅化物层的温度下退火所述金属锗层，同时在所述含硅衬底和所述基本上不可蚀刻的衬底之间形成Si-Ge中间层 金属硅化物层; 和（d）去除所述任选的氧气阻挡层和任何剩余的合金层。 当使用Co或Ti合金时，例如Co-Ge或Ti-Ge，需要两个退火步骤来提供这些金属的最低电阻相，而在使用Ni时，单个退火步骤形成最低的电阻相 的Ni硅化物。