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1.发明授权Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby 失效制造排列在基板上的电绝缘光伏模块的方法和由此获得的产品
公开(公告)号：US4667058A
公开(公告)日：1987-05-19
申请号：US750776
申请日：1985-07-01
IPC分类号： H01L21/764 , H01L27/142 , H01L31/0392 , H01L27/14 , H01L31/18
CPC分类号： H01L31/03921 , H01L21/764 , H01L31/046 , H01L31/0463 , Y02E10/50 , Y10S438/94
摘要： A method of fabricating electrically isolated photovoltaic modules arrayed on a substrate by forming overlying front contact strips, photovoltaic strips, and back contact strips on a flat transparent substrate, laser scribing between modules to electrically isolate adjacent modules for the simultaneous testing and electrical curing of the modules on a single substrate, and plasma etching the inter-module grooves formed by the laser isolation step to improve the percentage of modules on a single substrate that pass minimum performance criteria.Also disclosed is an array of electrically isolated, thin-film semiconductor devices fabricated on a single substrate, wherein adjacent semiconductor devices are separated by laser-scribed grooves extending through the devices to the substrate and the walls of the grooves have been etched by plasma etching.
摘要翻译： 通过在平坦的透明基板上形成覆盖的前接触条，光伏条和背接触条来制造在基板上排列的电隔离的光伏模块的方法，在模块之间划分激光划分以电隔离相邻的模块，以便同时测试和电固化 单个衬底上的模块，以及等离子体蚀刻通过激光隔离步骤形成的模块间沟槽，以提高通过最小性能标准的单个衬底上的模块的百分比。 还公开了一种在单个衬底上制造的电隔离的薄膜半导体器件的阵列，其中相邻的半导体器件通过穿过器件延伸到衬底的激光划线槽分隔开，并且已经通过等离子体蚀刻来蚀刻槽的壁 。
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公开(公告)号：US20110180393A1
公开(公告)日：2011-07-28
申请号：US13010871
申请日：2011-01-21
CPC分类号： C23C14/562 , C23C14/0042 , C23C14/08 , H01L31/0236 , H01L31/0296 , H01L31/03762 , H01L31/056 , Y02E10/52 , Y02E10/548
摘要： A process for forming a textured back reflector for a photovoltaic device is provided. The process includes providing a moving substrate, positioning the substrate within a deposition chamber, and sputtering a metal or a metal alloy target positioned within the deposition chamber to produce sputtered material. The process further includes introducing a reacting gas mixed with argon into the deposition chamber. The reacting gas and the sputtered metal or metal alloy material form an alloy layer. The alloy layer is formed on the substrate and provides a textured surface on the substrate.
摘要翻译： 提供了一种用于形成用于光伏器件的纹理后反射器的工艺。 该方法包括提供移动的基板，将基板定位在沉积室内，以及溅射位于沉积室内的金属或金属合金靶，以产生溅射材料。 该方法还包括将与氩气混合的反应气体引入沉积室。 反应气体和溅射的金属或金属合金材料形成合金层。 合金层形成在基底上，并在基底上提供有纹理的表面。
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公开(公告)号：US4431975A
公开(公告)日：1984-02-14
申请号：US250621
申请日：1981-04-16
申请人： Richard J. Podlesny
发明人： Richard J. Podlesny
CPC分类号： B06B1/0276 , B06B2201/71
摘要： An improved oscillator circuit, adapted especially for use in generating multi-frequency wave patterns occurring within the ultrasonic range, incorporates a transistor base drive network in which an alternate discharge path is used for coupling capacitors already known in circuits of this type. Power losses occurring in the transistors are lessened by employing transistors having reverse base-emitter breakdown voltage ratings that are higher than those conventionally employed. Use of the substituted transistors becomes possible by substituting the mentioned alternate discharge path, to compensate for the lower average discharge current that is known to pass through the base-emitter circuits of the transistors by reason of their higher reverse base-emitter breakdown voltages. The improved circuit in this way reduces power loss and its consequent temperature rise in the transistors and in their base and emitter resistors to increase output power to the accompanying reduction of transistor losses.
摘要翻译： 特别适用于产生超声波范围内发生的多频波形图案的改进的振荡器电路包括晶体管基极驱动网络，其中交替的放电路径用于耦合这种类型的电路中已知的电容器。 通过采用具有比通常采用的更高的基极 - 发射极击穿电压额定值的晶体管来减小在晶体管中发生的功率损耗。 通过用上述的交替放电路径来代替已知通过晶体管的基极 - 发射极电路的较低的平均放电电流，由于其较高的反向基极 - 发射极击穿电压，可以使用取代的晶体管。 改进的电路以这种方式降低了晶体管及其基极和发射极电阻中的功率损耗及随之而来的温度上升，从而增加输出功率，减少晶体管损耗。
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