Method of fabricating electrically isolated photovoltaic modules arrayed
on a substrate and product obtained thereby
    1.
    发明授权
    Method of fabricating electrically isolated photovoltaic modules arrayed on a substrate and product obtained thereby 失效
    制造排列在基板上的电绝缘光伏模块的方法和由此获得的产品

    公开(公告)号:US4667058A

    公开(公告)日:1987-05-19

    申请号:US750776

    申请日:1985-07-01

    摘要: A method of fabricating electrically isolated photovoltaic modules arrayed on a substrate by forming overlying front contact strips, photovoltaic strips, and back contact strips on a flat transparent substrate, laser scribing between modules to electrically isolate adjacent modules for the simultaneous testing and electrical curing of the modules on a single substrate, and plasma etching the inter-module grooves formed by the laser isolation step to improve the percentage of modules on a single substrate that pass minimum performance criteria.Also disclosed is an array of electrically isolated, thin-film semiconductor devices fabricated on a single substrate, wherein adjacent semiconductor devices are separated by laser-scribed grooves extending through the devices to the substrate and the walls of the grooves have been etched by plasma etching.

    摘要翻译: 通过在平坦的透明基板上形成覆盖的前接触条,光伏条和背接触条来制造在基板上排列的电隔离的光伏模块的方法,在模块之间划分激光划分以电隔离相邻的模块,以便同时测试和电固化 单个衬底上的模块,以及等离子体蚀刻通过激光隔离步骤形成的模块间沟槽,以提高通过最小性能标准的单个衬底上的模块的百分比。 还公开了一种在单个衬底上制造的电隔离的薄膜半导体器件的阵列,其中相邻的半导体器件通过穿过器件延伸到衬底的激光划线槽分隔开,并且已经通过等离子体蚀刻来蚀刻槽的壁 。

    Integrated battery fusing device
    2.
    发明授权
    Integrated battery fusing device 有权
    集成电池定影装置

    公开(公告)号:US07158370B2

    公开(公告)日:2007-01-02

    申请号:US10898648

    申请日:2004-07-23

    IPC分类号: H02B1/04

    摘要: An integrated battery fusing device for a battery system of the type used as a backup for powering telecommunications equipment. The fusing device includes a fusing assembly and a terminal plate arrangement that integrally mounts the fusing assembly to the battery system. The terminal plate arrangement includes a first connector for electrically coupling the fusing assembly to the battery system and a second connector for electrically coupling a battery cable to the fusing assembly.

    摘要翻译: 一种用于为电信设备供电的备用电池系统的集成电池定影装置。 定影装置包括将定影组件一体地安装到电池系统的定影组件和端子板装置。 端子板装置包括用于将定影组件电连接到电池系统的第一连接器和用于将电池电缆电耦合到定影组件的第二连接器。

    Electrical contacts for a thin-film semiconductor device
    3.
    发明授权
    Electrical contacts for a thin-film semiconductor device 失效
    用于薄膜半导体器件的电触头

    公开(公告)号:US4854974A

    公开(公告)日:1989-08-08

    申请号:US197433

    申请日:1988-05-23

    IPC分类号: H01L27/142

    摘要: A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

    摘要翻译: 一种在半导体材料薄膜上制造间隔开的背接触的方法,该方法是通过在半导体材料的顶部上形成缓冲材料条,在相应于后触点之间的所需分隔线的位置上形成基本上覆盖半导体材料的金属膜 和缓冲条,以及用激光覆盖在缓冲条上的金属膜的划线部分,而不与下面的半导体材料接触,以将金属层分离成多个后接触。 缓冲材料用于保护底层半导体材料在激光划线期间不被损坏。 还公开了包括这种背接触的背接触和多单元光伏模块。

    Method for manufacturing electrical contacts for a thin-film
semiconductor device
    4.
    发明授权
    Method for manufacturing electrical contacts for a thin-film semiconductor device 失效
    一种用于制造薄膜半导体器件的电触点的方法

    公开(公告)号:US4783421A

    公开(公告)日:1988-11-08

    申请号:US68753

    申请日:1987-06-29

    IPC分类号: H01L27/142 H01L31/18

    摘要: A method of fabricating spaced-apart back contacts on a thin film of semiconductor material by forming strips of buffer material on top of the semiconductor material in locations corresponding to the desired dividing lines between back contacts, forming a film of metal substantially covering the semiconductor material and buffer strips, and scribing portions of the metal film overlying the buffer strips with a laser without contacting the underlying semiconductor material to separate the metal layer into a plurality of back contacts. The buffer material serves to protect the underlying semiconductor material from being damaged during the laser scribing. Back contacts and multi-cell photovoltaic modules incorporating such back contacts also are disclosed.

    摘要翻译: 一种在半导体材料薄膜上制造间隔开的背接触的方法,该方法是通过在半导体材料的顶部上形成缓冲材料条,在相应于后触点之间的所需分隔线的位置上形成基本上覆盖半导体材料的金属膜 和缓冲条,以及用激光覆盖在缓冲条上的金属膜的划线部分,而不与下面的半导体材料接触,以将金属层分离成多个后接触。 缓冲材料用于保护底层半导体材料在激光划线期间不被损坏。 还公开了包括这种背接触的背接触和多单元光伏模块。

    Method for eliminating defects in a photodetector
    5.
    发明授权
    Method for eliminating defects in a photodetector 失效
    消除光电探测器缺陷的方法

    公开(公告)号:US4543171A

    公开(公告)日:1985-09-24

    申请号:US592396

    申请日:1984-03-22

    IPC分类号: H01L31/18 C25F3/12 H01L21/308

    摘要: The performance of a photodetector is reduced by the presence of an electrical defect such as a short or a shunt. The invention is a method of improving the performance of this photodetector by preferentially removing a portion of an exposed surface of a detector electrode at the defect site. The preferential etching of the exposed surface is obtained by immersing the photodetector in a chemical etching ambient which has an etching rate for the exposed surface of the electrode which increases with increasing temperature while applying a reverse-bias voltage to the electrodes. The reverse-bias voltage has sufficient magnitude to cause a local increase in temperature of the exposed surface at the defect site.

    摘要翻译: 通过存在诸如短路或分路的电气缺陷来减少光电检测器的性能。 本发明是通过在缺陷部位优先除去检测器电极的暴露表面的一部分来改善该光电检测器的性能的方法。 暴露表面的优选蚀刻是通过将光电检测器浸入化学蚀刻环境中而获得的,该化学蚀刻环境对电极的暴露表面的蚀刻速率随温度升高而增加,同时向电极施加反向偏压。 反向偏置电压具有足够的量级,导致在缺陷部位暴露表面的温度的局部升高。