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107 条记录 (耗时 0.054 秒)

    Process and device for perforating or cutting printed laminated composite materials
    1.
    发明授权
    Process and device for perforating or cutting printed laminated composite materials 失效
    用于穿孔或切割印刷复合材料的方法和装置

    公开(公告)号：US6007756A

    公开(公告)日：1999-12-28

    申请号：US981175

    申请日：1998-04-14

    申请人： Hans Weiteder ,  Holger Schmidt

    发明人： Hans Weiteder ,  Holger Schmidt

    IPC分类号： B23K26/08 ,  B23K26/382 ,  B23K26/40 ,  B23K26/402 ,  B23K26/10

    CPC分类号： B23K26/382 ,  B23K26/0838 ,  B23K26/40 ,  B23K26/402 ,  B23K2203/10 ,  B23K2203/172 ,  B23K2203/40 ,  B23K2203/42 ,  B23K2203/50

    摘要： A process and device are disclosed for perforating and/or partially cutting printed laminated composite materials by means of laser beams from at least one laser arranged in a laser station. In order to minimize equipment costs, in particular for the control of the perforation and/or partial cutting processes, without having to renounce to an exact positioning of the perforations and/or partial cuts, a process is disclosed characterized by the following steps: the laminated composite material web is cut into individual blanks (1) according to the printed image and/or folding pattern; the blanks (1) are transported to the laser station; and the perforations or partial cuts are carried out in the stationary blank (1). Also disclosed are means for carrying out the process.

    摘要翻译： PCT No.PCT / EP96 / 02447 Sec。 371日期：1998年4月14日 102（e）1998年4月14日PCT PCT 1996年6月5日PCT公布。 公开号WO96 / 41698 日期：1996年12月27日公开了一种用于通过激光束中的至少一个激光器的激光束穿孔和/或部分切割印刷的层叠复合材料的方法和装置。 为了最小化设备成本，特别是为了控制穿孔和/或部分切割过程，而不必放弃穿孔和/或部分切割的精确定位，公开了以下步骤的方法： 根据印刷图像和/或折叠图案将层压复合材料纤维网切割成单个坯料（1）; 坯料（1）被运送到激光站; 并且在固定坯料（1）中进行穿孔或部分切割。 还公开了用于执行该过程的手段。

    Method of fabricating integrated thin film solar cells
    2.
    发明授权
    Method of fabricating integrated thin film solar cells 失效
    集成薄膜太阳能电池的制造方法

    公开(公告)号：US5956572A

    公开(公告)日：1999-09-21

    申请号：US917105

    申请日：1997-08-25

    申请人： Susumu Kidoguchi ,  Akimasa Umemoto

    发明人： Susumu Kidoguchi ,  Akimasa Umemoto

    IPC分类号： H01L31/04 ,  H01L21/301 ,  H01L27/142 ,  H01L31/0392 ,  H01L31/052 ,  H01L31/18 ,  H01L31/20 ,  H01L21/00

    CPC分类号： B23K26/364 ,  B23K26/40 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/056 ,  H01L31/1884 ,  H01L31/202 ,  B23K2203/172 ,  Y02E10/52 ,  Y02P70/521 ,  Y10S438/94

    摘要： A method is provided for fabricating solar cells. A transparent conductive film is formed on a transparent substrate having an insulative surface and the transparent conductive film is segmented by a first scribing step to form transparent conductive film electrodes. An amorphous semiconductor layer is formed on the resulting substrate having the transparent conductive film electrodes. The amorphous semiconductor layer is segmented by a second scribing step to form amorphous semiconductor photoelectric conversion layers. A rear electrode layer is formed on the resulting substrate having the amorphous semiconductor photoelectric conversion layers and this rear electrode layer is segmented by a third scribing step to form rear electrodes. The third scribing step includes forming a resist film on the rear electrode layer, forming trenches in the resist film by laser scribing and etching off portions of the rear electrode layer with an etchant by using the resulting resist film as a mask.

    摘要翻译： 提供了制造太阳能电池的方法。 在具有绝缘表面的透明基板上形成透明导电膜，并且通过第一划刻步骤分割透明导电膜以形成透明导电膜电极。 在具有透明导电膜电极的所得基板上形成非晶半导体层。 通过第二划线步骤对非晶半导体层进行分割，以形成非晶半导体光电转换层。 在所得到的具有非晶半导体光电转换层的基板上形成后电极层，并且通过第三划刻步骤对该后电极层进行分割以形成后电极。 第三划线步骤包括在后电极层上形成抗蚀剂膜，通过激光划线在抗蚀剂膜中形成沟槽，并通过使用所得的抗蚀剂膜作为掩模，用蚀刻剂蚀刻掉后部电极层的部分。

    Laser system and method for selectively trimming films
    6.
    发明授权
    Laser system and method for selectively trimming films 失效
    用于选择性修整薄膜的激光系统和方法

    公开(公告)号：US5569398A

    公开(公告)日：1996-10-29

    申请号：US343779

    申请日：1994-11-22

    申请人： Yunlong Sun ,  Ed Swenson

    发明人： Yunlong Sun ,  Ed Swenson

    IPC分类号： H01L27/04 ,  B23K26/00 ,  B23K26/06 ,  B23K26/36 ,  H01L21/768 ,  H01L21/82 ,  H01L21/822 ,  H01S3/0915 ,  H01S3/13 ,  H01S3/16

    CPC分类号： B23K26/06 ,  B23K26/0643 ,  B23K26/351 ,  B23K26/362 ,  B23K26/40 ,  H01L21/76894 ,  B23K2201/34 ,  B23K2203/08 ,  B23K2203/10 ,  B23K2203/12 ,  B23K2203/14 ,  B23K2203/172 ,  B23K2203/26 ,  B23K2203/50 ,  H01S3/025 ,  H01S3/0401 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1611 ,  H01S3/1653 ,  Y10S438/94

    摘要： A laser system and processing method exploits the absorption contrast between the materials from which a film and an underlying substrate (26) are made to effectively remove the film from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m optimizes the absorption contrast between many resistive or conductive film materials (e.g., metals, metal alloys, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semi-conductors) and permits the use of laser output in a wider range of energy or power levels and pulse widths, without risking damage to the substrates or adjacent circuit structures. Existing film processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range. The laser system and processing method also exploit a wavelength range in which devices, including any semiconductor material-based devices affected by conventional laser wavelengths and devices having light-sensitive or photo-electronic portions integrated into their circuits, can be effectively functionally trimmed without inducing malfunctions or function shifts in the processed devices, thus allowing faster functional laser processing, easing geometric restrictions on circuit design, and facilitating production of denser and smaller devices.

    摘要翻译： 激光系统和处理方法利用材料之间的吸收对比度，其中膜和下面的基底（26）被制成以有效地从基底去除膜。 在1.2至3微米的波长范围内的激光输出优化了许多电阻或导电膜材料（例如金属，金属合金，多晶硅，多硅化物或二硅化物）和集成电路基板（例如硅，砷化镓， 或其他半导体），并且允许在更宽的能量或功率水平和脉冲宽度范围内使用激光输出，而不会损坏基板或相邻电路结构。 现有的胶片处理激光系统可以容易地修改为在1.2到3μm的范围内操作。 激光系统和处理方法还利用了波长范围，其中包括受传统激光波长影响的任何基于半导体材料的器件和具有集成到其电路中的光敏或光电子部分的器件的器件可以被有效地功能地修整而不诱导 处理的设备中的故障或功能偏移，因此允许更快的功能激光处理，减轻对电路设计的几何限制，并促进生产更致密和更小的设备。

    Process for making photovoltaic devices and resultant product
    9.
    发明授权
    Process for making photovoltaic devices and resultant product 失效
    制造光伏器件和产品的工艺

    公开(公告)号：US5248349A

    公开(公告)日：1993-09-28

    申请号：US881683

    申请日：1992-05-12

    申请人： James B. Foote ,  Steven A. F. Kaake ,  Peter V. Meyers ,  James F. Nolan

    发明人： James B. Foote ,  Steven A. F. Kaake ,  Peter V. Meyers ,  James F. Nolan

    IPC分类号： H01L31/04 ,  H01L31/073 ,  H01L31/18

    CPC分类号： H01L31/1836 ,  B23K26/364 ,  B23K26/40 ,  B23K2203/172 ,  Y02E10/543 ,  Y02P70/521 ,  Y10S438/907

    摘要： A process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.

    摘要翻译： 一种用于制造能够产生低成本电力的大面积光伏器件（22）的工艺和设备（70）。 用于执行该过程的设备（70）包括提供烘箱（156）所在的受控环境的外壳（126）。 至少一个并且优选多个沉积站（74,76,78）在烘箱（156）内提供加热的半导体材料的蒸气，用于将半导体材料连续升高温度沉积在包括玻璃板（26）的薄板基材（24）上 ）在烤箱内传送。 片材基板（24）在烘箱（156）内的辊式输送机（184）上输送，并且其主层（82）是碲化镉的半导体材料通过每次沉积沉积在基板的面向上的表面（28）上 车站位于烘箱上方位于滚筒输送机上方。 冷却站（86）在沉积半导体材料之后快速冷却基板（24），以加强基板的玻璃板。