公开(公告)号：US20120299053A1

公开(公告)日：2012-11-29

申请号：US13117908

申请日：2011-05-27

申请人： Anton MAUDER ,  Franz HIRLER ,  Joachim WEYERS

发明人： Anton MAUDER ,  Franz HIRLER ,  Joachim WEYERS

IPC分类号： H01L29/739 ,  H01L27/088 ,  H01L29/78

CPC分类号： H01L27/088 ,  H01L29/0607 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7831 ,  H03K2217/0036

摘要： A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity type electrically coupled to the source metallization. The semiconductor body also includes a second field-effect structure including a source region of the first conductivity type electrically coupled to the source metallization. A voltage tap including a semiconductor region within the semiconductor body is electrically coupled to a first gate electrode of the first field-effect structure by an intermediate inverter structure.

摘要翻译： 半导体器件包括源极金属化和半导体本体。 半导体本体包括第一场效应结构，其包括与源极金属化电耦合的第一导电类型的源极区域。 半导体本体还包括第二场效应结构，其包括与源极金属化电耦合的第一导电类型的源极区域。 包括半导体本体内的半导体区域的电压抽头通过中间逆变器结构电耦合到第一场效应结构的第一栅电极。

公开(公告)号：US20120306464A1

公开(公告)日：2012-12-06

申请号：US13118993

申请日：2011-05-31

申请人： Franz HIRLER ,  Martin FELDTKELLER ,  Gerald DEBOY

发明人： Franz HIRLER ,  Martin FELDTKELLER ,  Gerald DEBOY

IPC分类号： G05F1/10 ,  H03K17/687

CPC分类号： H02M3/158 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7813 ,  H03K17/04123 ,  H03K17/6871

摘要： Disclosed is a circuit arrangement, including a transistor component with a gate terminal, a control terminal, and a load path between a source and a drain terminal, and a drive circuit connected to the control terminal and configured to determine a load condition of the transistor component, to provide a drive potential to the control terminal, and to adjust the drive potential dependent on the load condition.

摘要翻译： 公开了一种电路装置，包括具有栅极端子的晶体管部件，控制端子和源极和漏极端子之间的负载路径，以及连接到控制端子并被配置为确定晶体管的负载状态的驱动电路 以向控制终端提供驱动电位，并且根据负载条件来调节驱动电位。

公开(公告)号：US20150187879A1

公开(公告)日：2015-07-02

申请号：US14642638

申请日：2015-03-09

申请人： Oliver HAEBERLEN ,  Franz HIRLER ,  Maximilian ROESCH

发明人： Oliver HAEBERLEN ,  Franz HIRLER ,  Maximilian ROESCH

IPC分类号： H01L29/10 ,  H01L29/417 ,  H01L29/78

CPC分类号： H01L29/1045 ,  H01L29/0626 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41775 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/8611

摘要： A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.

摘要翻译： 半导体部件可以包括具有前侧和后侧的半导体层，前侧的第一端子电极，背面侧的第二端子电极，前侧的第一导电型的第一掺杂剂区域， 其电连接到一个端子电极，在半导体层中的第二导电类型的第二掺杂区域，其电连接到另一个端子电极，在第一和第二掺杂剂区域之间形成pn结，电介质 在所述半导体层和所述第二端子电极之间的背侧上形成层，并且所述电介质层具有通过所述第二端子电极和所述第一或第二掺杂剂区域之间的电连接的开口。

公开(公告)号：US20110006407A1

公开(公告)日：2011-01-13

申请号：US12887268

申请日：2010-09-21

申请人： Franz HIRLER

发明人： Franz HIRLER

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7811

摘要： A semiconductor device is provided which includes a semiconductor substrate having a first surface, an active area and a peripheral area. The semiconductor device further includes least one channel stop trench formed in the semiconductor substrate, wherein the channel stop trench extends from the first surface at least partially into the semiconductor substrate and is arranged between the active area and the peripheral area. At least one electrode is arranged in the channel stop trench. The semiconductor substrate includes at least a peripheral contact region, which is arranged in the peripheral area at the first surface of the semiconductor substrate. A conductive layer is provided and in electrical contact with the electrode arranged in the channel stop trench and in electrical contact with the peripheral contact region. The conductive layer is electrically connected to the semiconductor substrate merely in the peripheral area and electrically insulated from the semiconductor substrate in the active area.

摘要翻译： 提供一种半导体器件，其包括具有第一表面，有源区和周边区的半导体衬底。 所述半导体器件还包括形成在所述半导体衬底中的至少一个沟道停止沟槽，其中所述沟道阻挡沟槽至少部分地从所述第一表面延伸到所述半导体衬底中并且布置在所述有源区域和所述周边区域之间。 至少一个电极布置在通道停止沟槽中。 半导体衬底至少包括周边接触区域，该区域布置在半导体衬底的第一表面的周边区域中。 提供导电层并与设置在通道停止沟槽中的电极电接触并与周边接触区域电接触。 导电层仅在周边区域电连接到半导体衬底并与有源区域中的半导体衬底电绝缘。

公开(公告)号：US20110284958A1

公开(公告)日：2011-11-24

申请号：US13108711

申请日：2011-05-16

申请人： Oliver HAEBERLEN ,  Franz HIRLER ,  Maximilian ROESCH

发明人： Oliver HAEBERLEN ,  Franz HIRLER ,  Maximilian ROESCH

IPC分类号： H01L29/78

CPC分类号： H01L29/1045 ,  H01L29/0626 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/4175 ,  H01L29/41775 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7833 ,  H01L29/7835 ,  H01L29/8611

摘要： A semiconductor component may include a semiconductor layer which has a front side and a back side, a first terminal electrode on the front side, a second terminal electrode on the back side, a first dopant region of a first conduction type on the front side, which is electrically connected to one of the terminal electrodes, a second dopant region of a second conduction type in the semiconductor layer, which is electrically connected to the other terminal electrode, a pn junction being formed between the first and second dopant regions, a dielectric layer on the back side between the semiconductor layer and the second terminal electrode, and the dielectric layer having an opening through which an electrical connection between the second terminal electrode and the first or second dopant region is passed.

摘要翻译： 半导体部件可以包括具有前侧和后侧的半导体层，前侧的第一端子电极，背面侧的第二端子电极，前侧的第一导电型的第一掺杂剂区域， 其电连接到一个端子电极，在半导体层中的第二导电类型的第二掺杂区域，其电连接到另一个端子电极，在第一和第二掺杂剂区域之间形成pn结，电介质 在所述半导体层和所述第二端子电极之间的背侧上形成层，并且所述电介质层具有通过所述第二端子电极和所述第一或第二掺杂剂区域之间的电连接的开口。