公开(公告)号：US07233031B2

公开(公告)日：2007-06-19

申请号：US10886007

申请日：2004-07-07

申请人： Anton Mauder ,  Holger Rüthing ,  Gerhard Miller ,  Hans Joachim Schulze ,  Josef Georg Bauer ,  Elmar Falck

发明人： Anton Mauder ,  Holger Rüthing ,  Gerhard Miller ,  Hans Joachim Schulze ,  Josef Georg Bauer ,  Elmar Falck

IPC分类号： H01L29/74

CPC分类号： H01L29/861 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/404 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/7395

摘要： A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

摘要翻译： 垂直功率半导体部件，例如 二极管或IGBT，其中在衬底的背面形成有后侧发射极或阴极发射极，并且由此至少部分覆盖其的后侧金属层由 事实上，在部件的边缘区域中，提供了用于减少从后侧发射器或阴极发射器进入所述边缘部分的电荷载流子注入的注入衰减装置。