Two-dimensional temperature sensing and compensation

    公开(公告)号:US12236850B2

    公开(公告)日:2025-02-25

    申请号:US18334914

    申请日:2023-06-14

    Applicant: Apple Inc.

    Abstract: To reduce image artifacts induced by temperature variations associated with display pixels of an electronic display, processing circuitry may process temperature sensing data to obtain an average temperature and a temperature distribution of the electronic display. Based on the processed temperature data, the processing circuit may adjust a reference voltage applied to the display pixels to compensate for the average temperate. To further correct for the image artifacts, the processing circuitry may transform image data to luminance domain. Based on the processed temperature data, the processing may adjust luminance vales of the image data to compensate for the temperature distribution.

    Ground isolation systems and methods

    公开(公告)号:US12027120B2

    公开(公告)日:2024-07-02

    申请号:US17889231

    申请日:2022-08-16

    Applicant: Apple Inc.

    CPC classification number: G09G3/3233 G06F3/04164 G09G2310/0262

    Abstract: Circuits, systems, methods, and devices are provided for isolating the first ground domain from the second ground domain while transmitting and receiving data between the two ground domains. The proposed high-voltage ground-isolating level shifter may be formed by AC coupling capacitors and a memory cell. The circuit under the high voltage ground domain may be located in an engineered high-voltage isolation well with a relatively large breakdown voltage.

    Ground Isolation Systems and Methods

    公开(公告)号:US20230087831A1

    公开(公告)日:2023-03-23

    申请号:US17889231

    申请日:2022-08-16

    Applicant: Apple Inc.

    Abstract: Circuits, systems, methods, and devices are provided for isolating the first ground domain from the second ground domain while transmitting and receiving data between the two ground domains. The proposed high-voltage ground-isolating level shifter may be formed by AC coupling capacitors and a memory cell. The circuit under the high voltage ground domain may be located in an engineered high-voltage isolation well with a relatively large breakdown voltage.

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