公开(公告)号：US20240363412A1

公开(公告)日：2024-10-31

申请号：US18141177

申请日：2023-04-28

Applicant: Applied Materials, Inc.

Inventor： Karthik Balakrishnan ,  Zavier Tan ,  Praveen Choragudi ,  Ananth Jupudi

IPC: H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67

CPC classification number: H01L21/78 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/67092

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a rectangular laser spot-based laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.