公开(公告)号：US20250054737A1

公开(公告)日：2025-02-13

申请号：US18231655

申请日：2023-08-08

Applicant: Applied Materials, Inc.

Inventor： Karthik ELUMALAI ,  Ananthkrishna JUPUDI ,  Arunkumar TATTI ,  Cheng SUN ,  Ye LIU

IPC: H01J37/32

Abstract: Embodiments of substrate supports having electrostatic chucks (ESCs) for use in substrate process chambers are provided herein. In some embodiments, a substrate support includes: an electrostatic chuck (ESC) having a top surface and a plurality of mesas extending upward from the top surface, wherein an upper surface of the plurality of mesas define a substrate support surface, wherein a total surface area of the substrate support surface is about 18 to about 40 percent a total surface area of the upper surface, and wherein the ESC includes a plurality of backside gas openings extending through the ESC; and one or more chucking electrodes disposed in the ESC.

公开(公告)号：US20240363348A1

公开(公告)日：2024-10-31

申请号：US18765888

申请日：2024-07-08

Applicant: Applied Materials, Inc.

Inventor： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC: H01L21/033 ,  B23K26/14 ,  B23K26/142 ,  B23K101/40 ,  H01L21/78

CPC classification number: H01L21/0337 ,  B23K26/142 ,  B23K26/1436 ,  B23K26/1437 ,  H01L21/78 ,  B23K2101/40

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

公开(公告)号：US20220319847A1

公开(公告)日：2022-10-06

申请号：US17219082

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC: H01L21/033 ,  H01L21/78 ,  B23K26/142 ,  B23K26/14

Abstract: Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.