公开(公告)号：US20180218928A1

公开(公告)日：2018-08-02

申请号：US15811575

申请日：2017-11-13

申请人： APPLIED MATERIALS, INC.

发明人： Eng Sheng PEH ,  Sriskantharajah THIRUNAVUKARASU ,  Jun-Liang SU ,  Shoju VAYYAPRON ,  Karthik ELUMALAI ,  Dimantha RAJAPAKSA ,  Arunkumar M Tatti

IPC分类号： H01L21/67 ,  H01L21/687 ,  H01L21/683 ,  H05B3/00

CPC分类号： H01L21/67115 ,  H01L21/67017 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/68757 ,  H05B3/0047

摘要： Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate support includes a base having an interior volume formed by walls extending upward from the base; a plurality of infrared lamps disposed within the interior volume; a support plate disposed above the plurality of infrared lamps, wherein the support plate includes a support surface to support a substrate; and a cover plate disposed atop the support plate and having a central opening corresponding to the support surface and an exhaust portion at a periphery of a top surface of the cover plate, wherein the exhaust portion includes a plurality of perforations fluidly coupling a space above the cover plate with an exhaust conduit formed in the cover plate. Embodiments of a showerhead assembly and processing equipment incorporating the inventive substrate support and showerhead assembly are additionally provided herein.

公开(公告)号：US20240363348A1

公开(公告)日：2024-10-31

申请号：US18765888

申请日：2024-07-08

申请人： Applied Materials, Inc.

发明人： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC分类号： H01L21/033 ,  B23K26/14 ,  B23K26/142 ,  B23K101/40 ,  H01L21/78

CPC分类号： H01L21/0337 ,  B23K26/142 ,  B23K26/1436 ,  B23K26/1437 ,  H01L21/78 ,  B23K2101/40

摘要： Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.

公开(公告)号：US20220319847A1

公开(公告)日：2022-10-06

申请号：US17219082

申请日：2021-03-31

申请人： Applied Materials, Inc.

发明人： Karthik Narayanan BALAKRISHNAN ,  Jungrae PARK ,  Arunkumar TATTI ,  Sriskantharajah THIRUNAVUKARASU ,  Eng Sheng PEH

IPC分类号： H01L21/033 ,  H01L21/78 ,  B23K26/142 ,  B23K26/14

摘要： Methods and apparatus for laser patterning leverage mask trench debris removal techniques to form etch singulation trenches. In some embodiments, the method includes forming a mask layer on the wafer, forming a pattern in the mask layer using a laser of a laser assembly where the pattern allows singulation of the wafer by deep etching and forms a trench in the mask layer with a laser beam which has a process point at a bottom of the trench, directing gas nozzles that flow a pressurized gas at the process point in the trench as the pattern is formed with a gas flow angle relative to the process point and evacuating debris from the trench using an area of negative pressure where the gas flow from gas nozzles and the area of negative pressure are in fluid contact and are confined within a cylindrical housing.