METHOD FOR UV BASED SILYLATION CHAMBER CLEAN
    1.
    发明申请
    METHOD FOR UV BASED SILYLATION CHAMBER CLEAN 有权
    紫外线基硅烷清洗方法

    公开(公告)号:US20130284204A1

    公开(公告)日:2013-10-31

    申请号:US13856962

    申请日:2013-04-04

    Abstract: Embodiments of the invention generally provide methods for cleaning a UV processing chamber. In one embodiment, the method includes flowing an oxygen-containing gas through a plurality of passages formed in a UV transparent gas distribution showerhead and into a processing region located between the UV transparent gas distribution showerhead and a substrate support disposed within the thermal processing chamber, exposing the oxygen-containing gas to UV radiation under a pressure scheme comprising a low pressure stage and a high pressure stage to generate reactive oxygen radicals, and removing unwanted residues or deposition build-up from exposed surfaces of chamber components presented in the thermal processing chamber using the reactive oxygen radicals.

    Abstract translation: 本发明的实施例通常提供用于清洁UV处理室的方法。 在一个实施方案中,该方法包括使含氧气体通过形成在UV透明气体分配喷头中的多个通道流入位于UV透明气体分配喷头和位于热处理室内的基板支架之间的处理区域中, 在包含低压级和高压级的压力方案下将含氧气体暴露于紫外线辐射以产生活性氧自由基,以及从在热处理室中呈现的腔室组分的暴露表面去除不需要的残留物或沉积物 使用活性氧自由基。

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