公开(公告)号：US20240385048A1

公开(公告)日：2024-11-21

申请号：US18789641

申请日：2024-07-30

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

公开(公告)号：US20230102821A1

公开(公告)日：2023-03-30

申请号：US17487993

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.