公开(公告)号：US20240112889A1

公开(公告)日：2024-04-04

申请号：US18372811

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Tony Jefferson GNANAPRAKASA ,  Alvaro GARCIA ,  Martin Perez GUZMAN ,  Stephen Donald PROUTY

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/32715 ,  H01L21/67069 ,  H01L21/6833

Abstract: The disclosure relates to a substrate support assembly for reducing the evacuation time when using argon gas. In one embodiment, a substrate support assembly includes a porous plug within the substrate support assembly. The porous plug includes a first cylindrical section with a first volume and axial length, a second cylindrical section with a second volume and axial length. The first cylindrical section has a larger volume than the second cylindrical section. The first cylindrical section and second cylindrical section have a volume ratio between about 2 and about 12. The first cylindrical section axial length and second cylindrical section axial length have a length ratio between about 2 and about 10.

公开(公告)号：US20240385048A1

公开(公告)日：2024-11-21

申请号：US18789641

申请日：2024-07-30

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

公开(公告)号：US20240112939A1

公开(公告)日：2024-04-04

申请号：US18372818

申请日：2023-09-26

Applicant: Applied Materials, Inc.

Inventor： Tony Jefferson GNANAPRAKASA ,  Alvaro GARCIA ,  Gautham BAMMANAHALLI ,  Tatsuichiro INOUE ,  Nathaniel MOORE

IPC: H01L21/683 ,  H01J37/32

CPC classification number: H01L21/6831 ,  H01J37/32715 ,  H01J2237/002 ,  H01J2237/2007

Abstract: Embodiments of this disclosure include methods of chucking and de-chucking a substrate. A method of chucking a substrate to a surface of an electrostatic chuck includes applying a first voltage to a chucking electrode in the ESC during a chucking time interval, supplying an inert gas at a first pressure to a backside of the substrate during the chucking time interval, applying a second voltage to the chucking electrode in the ESC after the chucking time interval, the second voltage being higher than the first voltage, and supplying the inert gas at a second pressure to the backside of the substrate after the chucking time interval, the second pressure being higher than the first pressure of the inert gas.

公开(公告)号：US20230102821A1

公开(公告)日：2023-03-30

申请号：US17487993

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.