公开(公告)号：US20150048062A1

公开(公告)日：2015-02-19

申请号：US14459016

申请日：2014-08-13

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS

IPC: G02F1/01 ,  H01L21/67 ,  G02F1/19 ,  B23K26/06

CPC classification number: G02F1/0147 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/0648 ,  B23K26/0853 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/56 ,  G02F1/19 ,  G02F2201/08 ,  G02F2201/346

Abstract: Embodiments of the present invention generally relate to an optical valve that modifies a laser beam to allow more energy to be irradiated onto less absorbing areas on a substrate and less energy to be irradiated onto more absorbing areas on the substrate, thus creating a more uniform heating field. The optical valve is a layered structure comprising a reflective switch layer, an absorbing layer, a thermal resistor and a thermal bath.

Abstract translation: 本发明的实施例一般涉及一种修改激光束以允许更多能量照射到衬底上的较少吸收区域上的光阀，并且较少的能量照射到衬底上的更多吸收区域上，从而产生更均匀的加热 领域。 光阀是包括反射开关层，吸收层，热电阻和热浴的分层结构。

公开(公告)号：US20230102821A1

公开(公告)日：2023-03-30

申请号：US17487993

申请日：2021-09-28

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Alvaro GARCIA ,  Barry P. CRAVER ,  Tony Jefferson GNANAPRAKASA ,  Lei LIAN

IPC: G01J5/58 ,  H01J37/32 ,  H01L21/66

Abstract: A method and apparatus for determining the temperature of a substrate within a processing chamber are described herein. The methods and apparatus described herein utilize an etalon assembly and a heterodyning effect to determine a first temperature of a substrate. The first temperature of the substrate is determined without physically contacting the substrate. A separate temperature sensor also measures a second temperature of the substrate and/or the substrate support at a similar location. The first temperature and the second temperature are utilized to calibrate one of the temperature sensors disposed within the substrate support, a model of the processes performed within the processing chamber, or to adjust a process parameter of the process performed within the processing chamber.

公开(公告)号：US20210053147A1

公开(公告)日：2021-02-25

申请号：US17090709

申请日：2020-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph M. RANISH

IPC: B23K26/06 ,  B23K26/352 ,  B23K26/073 ,  H01L21/324 ,  H01L21/268

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20160293414A1

公开(公告)日：2016-10-06

申请号：US15186499

申请日：2016-06-19

Applicant: Applied Materials, Inc.

Inventor： Bruce E. ADAMS ,  Aaron Muir HUNTER ,  Stephen MOFFATT

IPC: H01L21/02

CPC classification number: H01L21/02686 ,  H01L21/02521 ,  H01L21/268

Abstract: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

公开(公告)号：US20140009829A1

公开(公告)日：2014-01-09

申请号：US14026681

申请日：2013-09-13

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Timothy N. THOMAS ,  Stephen MOFFATT ,  Jiping LI ,  Bruce E. ADAMS ,  Samuel C. HOWELLS

IPC: G02B27/28 ,  G02B27/10 ,  H01L21/67

CPC classification number: G02B27/283 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/0622 ,  B23K26/067 ,  G02B27/10 ,  G02B27/144 ,  G02B27/145 ,  G02B27/48 ,  H01L21/268 ,  H01L21/67115

Abstract: A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. For some embodiments employing a pulsed light source, the output pulse may be stretched relative to the input pulse width. The methods and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.

Abstract translation: 提供了一种用于在时间和空间上从光源（例如脉冲激光）去除相干光的方法和装置，以提供强烈和均匀的照明。 对于采用脉冲光源的一些实施例，可以相对于输入脉冲宽度拉伸输出脉冲。 本文描述的方法和装置可以结合到需要强烈均匀照明的任何应用中，例如脉冲激光退火，焊接，烧蚀和晶片步进照明。

公开(公告)号：US20200025631A1

公开(公告)日：2020-01-23

申请号：US16513842

申请日：2019-07-17

Applicant: Applied Materials, Inc.

Inventor： Samuel C. HOWELLS ,  Bruce E. ADAMS

IPC: G01K11/00

Abstract: A method includes exposing a sample etalon-object to sample incident radiation, resulting in a sample transmitted radiation and sample reflected radiation; exposing a reference etalon-object to reference incident radiation, resulting in a reference transmitted radiation and reference reflected radiation; and analyzing resultant radiation for a heterodyned spectrum. The sample transmitted radiation may become the reference incident radiation, and the reference transmitted radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample transmitted radiation may become the resultant radiation. The sample transmitted radiation may become the reference incident radiation, and the reference reflected radiation may become the resultant radiation. The reference transmitted radiation may become the sample incident radiation, and the sample reflected radiation may become the resultant radiation.

公开(公告)号：US20180101103A1

公开(公告)日：2018-04-12

申请号：US15829809

申请日：2017-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh BANGAR ,  Bruce E. ADAMS ,  Kelly E. HOLLAR ,  Abhilash J. MAYUR ,  Huixiong DAI ,  Jaujiun CHEN

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US20170148726A1

公开(公告)日：2017-05-25

申请号：US15341896

申请日：2016-11-02

Applicant: Applied Materials, Inc.

Inventor： Stephen MOFFATT ,  Abhilash J. MAYUR ,  Theodore P. MOFFITT ,  Aaron Muir HUNTER ,  Shashank SHARMA ,  Bruce E. ADAMS ,  Samuel C. HOWELLS ,  Douglas E. HOLMGREN ,  Wolfgang R. ADERHOLD

IPC: H01L23/528 ,  H01L23/532 ,  H01L21/762 ,  H01L21/268

CPC classification number: H01L21/762 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/268 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/41725 ,  H01L29/45

Abstract: A semiconductor processing method and semiconductor device are described. The processing method includes forming a p-doped germanium structure on a substrate, annealing the p-doped germanium structure using pulses of laser radiation, and forming a titanium structure in direct contact with the p-doped germanium structure.

公开(公告)号：US20150069028A1

公开(公告)日：2015-03-12

申请号：US14533997

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Dean JENNINGS ,  Haifan LIANG ,  Mark YAM ,  Vijay PARIHAR ,  Abhilash J. MAYUR ,  Aaron Muir HUNTER ,  Bruce E. ADAMS ,  Joseph Michael RANISH

IPC: B23K26/06 ,  B23K26/00 ,  B23K26/073 ,  H01L21/268 ,  H01L21/324

CPC classification number: B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

Abstract: A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

Abstract translation: 一种热处理装置和方法，其中第一激光源例如以10.6μm发射的CO 2作为线束聚焦在硅晶片上，并且第二激光源例如在808nm处发射的GaAs激光棒是 作为围绕线束的较大波束聚焦在晶片上。 沿着线束的窄尺寸的方向同步地扫描两个光束，以在由较大的光束激活时从线束产生窄的加热脉冲。 GaAs辐射的能量大于硅带隙能量，并产生自由载流子。 CO2辐射的能量小于硅带隙能量，因此硅对其透明度不变，但长波长辐射被自由载流子吸收。

公开(公告)号：US20140255862A1

公开(公告)日：2014-09-11

申请号：US14163623

申请日：2014-01-24

Applicant: Applied Materials, Inc.

Inventor： Joseph M. RANISH ,  Bruce E. ADAMS

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: Embodiments of the invention generally relate to pyrometry during thermal processing of semiconductor substrates. More specifically, embodiments of the invention relate to a pyrometry filter for a thermal process chamber. In certain embodiments, the pyrometry filter selectively filters selected wavelengths of energy to improve a pyrometer measurement. The pyrometry filter may have various geometries which may affect the functionality of the pyrometry filter.

Abstract translation: 本发明的实施方案通常涉及半导体衬底的热处理期间的高温测定。 更具体地，本发明的实施例涉及用于热处理室的高温测定过滤器。 在某些实施方案中，高温测定过滤器选择性地过滤所选择的能量波长以改进高温计测量。 高温计过滤器可以具有可能影响高温计过滤器的功能的各种几何形状。