公开(公告)号：US20230027683A1

公开(公告)日：2023-01-26

申请号：US17961040

申请日：2022-10-06

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Lit Ping LAM ,  Preetham RAO ,  Kartik SHAH ,  Ian ONG ,  Nyi O. MYO ,  Brian H. BURROWS

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20190132910A1

公开(公告)日：2019-05-02

申请号：US16114790

申请日：2018-08-28

Applicant: Applied Materials, Inc.

Inventor： Jean DELMAS ,  Brian H. BURROWS ,  Subramanya P. HERLE

IPC: H05B6/80 ,  H01M10/04

Abstract: Implementations described herein generally relate to batteries for portable electronic devices. More specifically, implementations of the present disclosure relate to electrode assemblies, such as jelly roll-type electrode assemblies, and apparatus and methods for manufacturing electrode assemblies. In one implementation, a system for moisture removal is provided. The system comprises a tubular chamber body defining one or more processing regions. The tubular chamber body comprises a tubular outer wall and an interior wall that encloses an interior volume. The one or more processing regions include a pre-heat region and a drying region. The pre-heat region comprises a first variable frequency microwave source capable of producing microwave energy in a range from about 0.9 GHz to about 10 GHz. The drying region comprises a second variable frequency microwave source capable of producing microwave energy in a range from about 0.9 GHz to about 10 GHz and a vacuum source.

公开(公告)号：US20210324514A1

公开(公告)日：2021-10-21

申请号：US17218892

申请日：2021-03-31

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan YE ,  Shu-Kwan Danny LAU ,  Brian H. BURROWS ,  Lori WASHINGTON ,  Herman DINIZ ,  Martin A. HILKENE ,  Richard O. COLLINS ,  Nyi O. MYO ,  Manish HEMKAR ,  Schubert S. CHU

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/458 ,  C23C16/48 ,  H01L21/67

Abstract: A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit. The process chamber described herein enables for the processing of multiple substrates simultaneously with improved process gas flow and heat distribution.

公开(公告)号：US20200332437A1

公开(公告)日：2020-10-22

申请号：US16427812

申请日：2019-05-31

Applicant: Applied Materials, Inc.

Inventor： Brian H. BURROWS ,  Ala MORADIAN ,  Kartik SHAH ,  Shu-Kwan LAU

IPC: C30B25/14 ,  H01L21/02 ,  C30B29/40 ,  C23C16/455 ,  C23C16/30

Abstract: Embodiment disclosed herein include a liner assembly, comprising an injector plate liner, a gas injector liner coupled to the injector plate liner, an upper process gas liner coupled to the gas injector liner, a lower process gas liner coupled to the upper process gas liner, and an injector plate positioned between the injector plate liner and the upper process gas liner, wherein a cooling fluid channel is formed in the injector plate adjacent to the gas injector liner.

公开(公告)号：US20200071832A1

公开(公告)日：2020-03-05

申请号：US16539317

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan LAU ,  Lit Ping LAM ,  Preetham RAO ,  Kartik SHAH ,  Ian ONG ,  Nyi O. MYO ,  Brian H. BURROWS

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/46

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US20170221751A1

公开(公告)日：2017-08-03

申请号：US15501148

申请日：2015-08-21

Applicant: Applied Materials, Inc.

Inventor： Brian H. BURROWS ,  Lance A. SCUDDER ,  David K. CARLSON ,  Kashif MAQSOOD

IPC: H01L21/687

CPC classification number: H01L21/68785 ,  C23C14/50 ,  C23C16/4585 ,  C30B25/12 ,  H01L21/68721 ,  H01L21/68771

Abstract: A substrate carrier for an epitaxy chamber is described that has an elongated base member supporting two substrate supports in an angled relationship and a center substrate support between the two substrate supports. The center substrate support has one or more openings at which a substrate is positioned for processing, enabling both sides of the substrate to be processed concurrently.

公开(公告)号：US20160348240A1

公开(公告)日：2016-12-01

申请号：US15111541

申请日：2015-01-06

Applicant: APPLIED MATERIALS, INC

Inventor： Brian H. BURROWS ,  Lance A. SCUDDER ,  Kashif MAQSOOD ,  Roger N. ANDERSON ,  Sumedh Dattatraya ACHARYA

IPC: C23C16/458 ,  C23C16/48 ,  C23C16/24 ,  H01L21/677 ,  H01L21/67

CPC classification number: C23C16/4584 ,  C23C16/24 ,  C23C16/45502 ,  C23C16/45578 ,  C23C16/46 ,  C23C16/482 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67757

Abstract: Embodiments described herein generally relate to a batch processing chamber. The batch processing chamber includes a lid, a chamber wall and a bottom that define a processing region. A cassette including a stack of susceptors for supporting substrates is disposed in the processing region. The edge of the cassette is coupled to a plurality of shafts and the shafts are coupled to a rotor. During operation, the rotor rotates the cassette to improve deposition uniformity. A heating element is disposed on the chamber wall and a plurality of gas inlets is disposed through the heating element on the chamber wall. Each gas inlet is substantially perpendicular to the chamber wall.

Abstract translation: 本文描述的实施例通常涉及批处理室。 批处理室包括盖，室壁和限定处理区域的底部。 包括用于支撑衬底的一堆基座的盒子被设置在处理区域中。 盒的边缘联接到多个轴，并且轴联接到转子。 在操作期间，转子旋转盒子以改善沉积均匀性。 加热元件设置在室壁上，并且多个气体入口通过加热元件设置在室壁上。 每个气体入口基本上垂直于室壁。

公开(公告)号：US20200291523A1

公开(公告)日：2020-09-17

申请号：US16306181

申请日：2017-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： David M. ISHIKAWA ,  Brian H. BURROWS

IPC: C23C16/46 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54

Abstract: Multi-zone process kits for use in a deposition chamber are provided herein. In some embodiments, a multi-zone process kit includes a body having a plurality of deposition zones formed in the body; one or more gas injection conduits fluidly coupled to a first side of each of the plurality of deposition zones via a plurality of gas inlets; an exhaust conduit fluidly coupled to a second side of each of the plurality of deposition zones via a plurality of exhaust apertures; and a multi-zone heater having a plurality of heating zones, wherein one or more of the plurality of heating zones corresponds to each of the plurality of deposition zones.

公开(公告)号：US20200290932A1

公开(公告)日：2020-09-17

申请号：US16306171

申请日：2017-06-02

Applicant: APPLIED MATERIALS, INC.

Inventor： David Masayuki ISHIKAWA ,  Brian H. BURROWS

IPC: C04B35/628 ,  C23C16/34 ,  C23C16/04 ,  C23C16/54 ,  C04B35/80

Abstract: Methods and apparatus for depositing material on a continuous substrate are provided herein. In some embodiments, an apparatus for processing a continuous substrate includes: a first chamber having a first volume; a second chamber having a second volume fluidly coupled to the first volume; and a plurality of process chambers, each having a process volume defining a processing path between the first chamber and the second chamber, wherein the process volume of each process chamber is fluidly coupled to each other, to the first volume, and to the second volume, and wherein the first chamber, the second chamber, and the plurality of process chambers are configured to process a continuous substrate that extends from the first chamber, through the plurality of process chambers, and to the second chamber.