公开(公告)号：US20020139790A1

公开(公告)日：2002-10-03

申请号：US10117918

申请日：2002-04-05

Applicant: Applied Materials, Inc.

Inventor： Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

IPC: F27D011/00 ,  F27B005/14

CPC classification number: G01J5/04 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0862 ,  G01J2005/0048

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

公开(公告)号：US20040065657A1

公开(公告)日：2004-04-08

申请号：US10267053

申请日：2002-10-07

Applicant: Applied Materials, Inc.

Inventor： Bruce Adams ,  Aaron Hunter

IPC: H05B003/68

CPC classification number: H01L21/67248 ,  H01L21/67115

Abstract: In a system for thermal processing of a semiconductor substrate, an RTP system employs a reflector plate which is highly reflective of radiation in a target wavelength range, and less reflective of radiation outside that target wavelength range. In one embodiment, the reflector plate has a highly reflective portion overlying a less reflective portion, wherein the highly reflective portion is highly reflective of radiation in the target wavelength range. As radiation emitted by the substrate is received on the reflector, the radiation in the target wavelength range is reflected, thereby facilitating measurement of the substrate temperature by the pyrometer(s), while radiation outside the target wavelength range is absorbed, thereby facilitating cooling of the substrate.

Abstract translation: 在半导体衬底的热处理系统中，RTP系统采用反射板，该反射板高度反射目标波长范围内的辐射，并且对目标波长范围外的辐射反射较少。 在一个实施例中，反射板具有覆盖较少反射部分的高反射部分，其中高反射部分高度反射目标波长范围内的辐射。 由于衬底发射的辐射被接收在反射器上，所以目标波长范围内的辐射被反射，从而有助于通过高温计测量衬底温度，同时吸收目标波长范围外的辐射，从而有助于冷却 底物。

公开(公告)号：US20010006530A1

公开(公告)日：2001-07-05

申请号：US09756945

申请日：2001-01-08

Applicant: Applied Materials, Inc.

Inventor： Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

IPC: G01J005/08 ,  G01N025/00 ,  G01K001/14 ,  G01K013/00 ,  A21B001/00

CPC classification number: G01J5/04 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0862 ,  G01J2005/0048

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

Abstract translation: 描述了用于测量热处理室中的基板的温度的温度传感器。 该腔室包括一反射镜，当该基片定位在腔室中时，该反射器形成具有基底的反射腔。 温度传感器包括探针，其具有定位成接收来自反射腔的辐射的输入端，以及光学耦合到探针的输出端的检测器。 进入探头的辐射包括反射辐射和未反射的辐射。 检测器测量进入探头的辐射的第一部分的强度，以产生第一强度信号并测量进入探头的辐射的第二部分的强度以产生第二强度信号。 检测器被配置为使得反射辐射与非反射辐射的比率在第一部分中比第二部分高。 两个强度信号用于计算衬底的温度和发射率。