公开(公告)号：US20020183885A1

公开(公告)日：2002-12-05

申请号：US10198985

申请日：2002-07-22

Applicant: Applied Materials, Inc.

Inventor： Alexey G. Goder ,  Mark Yam

IPC: G06F019/00

CPC classification number: G05B19/0421 ,  G05B19/41865 ,  Y02P90/20

Abstract: A system, method and medium for controlling a wafer processing chamber using two or more processors (within one or more computer processing systems), wherein specified functions are assigned to each processor. Some embodiments contemplate that each processor may reside within its own computer processor system (each computer processor system being in communication with the other), wherein each computer processor system implements specified functions to control and maintain certain parameters involved in the manufacture of the wafer. This allows the present invention to react quickly to maintain rapidly-changing desired conditions within a wafer processing chamber and to maintain a greater degree of uniformity of those conditions throughout the wafer.

Abstract translation: 一种用于使用两个或多个处理器（在一个或多个计算机处理系统内）控制晶片处理室的系统，方法和介质，其中指定的功能被分配给每个处理器。 一些实施例考虑到每个处理器可以驻留在其自己的计算机处理器系统（每个计算机处理器系统与另一个处理器系统通信）中，其中每个计算机处理器系统实现指定的功能以控制和维持晶片制造中涉及的某些参数。 这允许本发明快速反应以保持晶片处理室内快速变化的期望条件，并且保持整个晶片的这些条件的更大程度的均匀性。

公开(公告)号：US20020139790A1

公开(公告)日：2002-10-03

申请号：US10117918

申请日：2002-04-05

Applicant: Applied Materials, Inc.

Inventor： Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

IPC: F27D011/00 ,  F27B005/14

CPC classification number: G01J5/04 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0862 ,  G01J2005/0048

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

公开(公告)号：US20040079746A1

公开(公告)日：2004-04-29

申请号：US10280660

申请日：2002-10-24

Applicant: Applied Materials, Inc.

Inventor： Dean Jennings ,  Joseph M. Ranish ,  Brian Haas ,  Ajit Balakrishna ,  Sundar Ramamurthy ,  Aaron Hunter ,  Mark Yam

IPC: F27D011/00 ,  F27B005/14

CPC classification number: H01L21/67248 ,  F27B5/16 ,  F27B17/0025 ,  F27D19/00 ,  F27D21/0014 ,  H01L21/67115

Abstract: In a system for thermal processing of a semiconductor substrate, a reflector plate has a stepped surface facing the substrate during heating and cooling of the substrate. The raised surface of the reflector plate has reduced reflectivity, providing advantages during, among other things, cooling of the substrate. The reflector plate also includes a number of recesses to which one or more pyrometers are coupled. These recesses have a highly reflective surface, providing advantages in the performance of the pyrometers.

Abstract translation: 在半导体衬底的热处理系统中，反射板在衬底的加热和冷却期间具有面向衬底的台阶表面。 反射板的凸起表面具有降低的反射率，在基板的冷却等方面提供了优点。 反射板还包括多个凹槽，一个或多个高温计与之连接。 这些凹槽具有高度反射的表面，在高温计的性能方面具有优势。

公开(公告)号：US20030196996A1

公开(公告)日：2003-10-23

申请号：US10325497

申请日：2002-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Dean C. Jennings ,  Mark Yam ,  Abhilash J. Mayur ,  Vernon Behrens ,  Paul A. O'Brien ,  Leonid M. Tertitski ,  Alexander Goldin

IPC: B23K026/06

CPC classification number: H01L21/02683 ,  B23K26/032 ,  B23K26/034 ,  B23K26/04 ,  B23K26/0608 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0652 ,  B23K26/0665 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/083 ,  B23K26/0838 ,  B23K26/0869 ,  B23K26/123 ,  B23K26/125 ,  B23K26/142 ,  B23K26/32 ,  B23K26/34 ,  B23K26/705 ,  B23K2101/34 ,  B23K2101/40 ,  B23K2103/08 ,  B23K2103/50 ,  C23C8/00 ,  C23C8/10 ,  C23C8/22 ,  C23C16/047 ,  C23C16/481 ,  G02B27/0955 ,  H01L21/00 ,  H01L21/2026 ,  H01L21/67115

Abstract: The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation. The computer system is coupled to the detection module.

Abstract translation: 热处理装置包括台，连续波电磁辐射源，一系列透镜，平移机构，检测模块和计算机系统。 该台被配置为在其上接收基板。 连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。 该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。 翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。 检测模块位于路径内，被配置为检测连续波电磁辐射。 计算机系统耦合到检测模块。

公开(公告)号：US20010006530A1

公开(公告)日：2001-07-05

申请号：US09756945

申请日：2001-01-08

Applicant: Applied Materials, Inc.

Inventor： Bruce Adams ,  Aaron Hunter ,  Alex Rubinchik ,  Mark Yam ,  Paul A. O'Brien

IPC: G01J005/08 ,  G01N025/00 ,  G01K001/14 ,  G01K013/00 ,  A21B001/00

CPC classification number: G01J5/04 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/046 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0809 ,  G01J5/0815 ,  G01J5/0818 ,  G01J5/0821 ,  G01J5/0846 ,  G01J5/0862 ,  G01J2005/0048

Abstract: A temperature sensor for measuring a temperature of a substrate in a thermal processing chamber is described. The chamber includes a reflector forming a reflecting cavity with a substrate when the substrate is positioned in the chamber. The temperature sensor includes a probe having an input end positioned to receive radiation from the reflecting cavity, and a detector optically coupled to an output end of the probe. The radiation entering the probe includes reflected radiation and non-reflected radiation. The detector measures an intensity of a first portion of the radiation entering the probe to generate a first intensity signal and measures an intensity of a second portion of the radiation entering the probe to generate a second intensity signal. The detector is configured so that a ratio of the reflected radiation to the non-reflected radiation is higher in the first portion than the second portion. The two intensity signals are used to calculate the temperature and emissivity of the substrate.

Abstract translation: 描述了用于测量热处理室中的基板的温度的温度传感器。 该腔室包括一反射镜，当该基片定位在腔室中时，该反射器形成具有基底的反射腔。 温度传感器包括探针，其具有定位成接收来自反射腔的辐射的输入端，以及光学耦合到探针的输出端的检测器。 进入探头的辐射包括反射辐射和未反射的辐射。 检测器测量进入探头的辐射的第一部分的强度，以产生第一强度信号并测量进入探头的辐射的第二部分的强度以产生第二强度信号。 检测器被配置为使得反射辐射与非反射辐射的比率在第一部分中比第二部分高。 两个强度信号用于计算衬底的温度和发射率。