公开(公告)号：US11854886B2

公开(公告)日：2023-12-26

申请号：US17847419

申请日：2022-06-23

Applicant: Applied Materials, Inc.

Inventor： Peng Suo ,  Ying W. Wang ,  Guan Huei See ,  Chang Bum Yong ,  Arvind Sundarrajan

IPC: H01L21/768 ,  H01L21/308 ,  H01L21/288 ,  H01L21/285 ,  H01L21/306

CPC classification number: H01L21/76898 ,  H01L21/288 ,  H01L21/2855 ,  H01L21/308 ,  H01L21/30625

Abstract: The present disclosure relates to through-via structures with dielectric shielding of interconnections for advanced wafer level semiconductor packaging. The methods described herein enable the formation of high thickness dielectric shielding layers within low aspect ratio through-via structures, thus facilitating thin and small-form-factor package structures having high I/O density with improved bandwidth and power.