公开(公告)号：US10297458B2

公开(公告)日：2019-05-21

申请号：US15670919

申请日：2017-08-07

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US20190272998A1

公开(公告)日：2019-09-05

申请号：US16416865

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US11101136B2

公开(公告)日：2021-08-24

申请号：US16416865

申请日：2019-05-20

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.

公开(公告)号：US20190043726A1

公开(公告)日：2019-02-07

申请号：US15670919

申请日：2017-08-07

Applicant: Applied Materials, Inc.

Inventor： Dongqing Yang ,  Tien Fak Tan ,  Peter Hillman ,  Lala Zhu ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Christopher Snedigar ,  Ming Xia

IPC: H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.