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公开(公告)号:US11101136B2
公开(公告)日:2021-08-24
申请号:US16416865
申请日:2019-05-20
Applicant: Applied Materials, Inc.
Inventor: Dongqing Yang , Tien Fak Tan , Peter Hillman , Lala Zhu , Nitin K. Ingle , Dmitry Lubomirsky , Christopher Snedigar , Ming Xia
IPC: H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/3105 , H01L21/311
Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
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公开(公告)号:US20190043726A1
公开(公告)日:2019-02-07
申请号:US15670919
申请日:2017-08-07
Applicant: Applied Materials, Inc.
Inventor: Dongqing Yang , Tien Fak Tan , Peter Hillman , Lala Zhu , Nitin K. Ingle , Dmitry Lubomirsky , Christopher Snedigar , Ming Xia
IPC: H01L21/3065 , H01J37/32
Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
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公开(公告)号:US20190272998A1
公开(公告)日:2019-09-05
申请号:US16416865
申请日:2019-05-20
Applicant: Applied Materials, Inc.
Inventor: Dongqing Yang , Tien Fak Tan , Peter Hillman , Lala Zhu , Nitin K. Ingle , Dmitry Lubomirsky , Christopher Snedigar , Ming Xia
IPC: H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/3105
Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
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公开(公告)号:US20200098586A1
公开(公告)日:2020-03-26
申请号:US16138507
申请日:2018-09-21
Applicant: Applied Materials, Inc.
Inventor: Ming Xia , Dongqing Yang , Ching-Mei Hsu
IPC: H01L21/311 , H01L21/67
Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.
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公开(公告)号:US10297458B2
公开(公告)日:2019-05-21
申请号:US15670919
申请日:2017-08-07
Applicant: Applied Materials, Inc.
Inventor: Dongqing Yang , Tien Fak Tan , Peter Hillman , Lala Zhu , Nitin K. Ingle , Dmitry Lubomirsky , Christopher Snedigar , Ming Xia
IPC: H01L21/302 , H01L21/3065 , H01J37/32 , H01L21/02 , H01L21/3105
Abstract: Embodiments of the present technology may include a method of etching. The method may include mixing plasma effluents with a gas in a first section of a chamber to form a first mixture. The method may also include flowing the first mixture to a substrate in a second section of the chamber. The first section and the second section may include nickel plated material. The method may further include reacting the first mixture with the substrate to etch a first layer selectively over a second layer. In addition, the method may include forming a second mixture including products from reacting the first mixture with the substrate.
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公开(公告)号:US11417534B2
公开(公告)日:2022-08-16
申请号:US16138507
申请日:2018-09-21
Applicant: Applied Materials, Inc.
Inventor: Ming Xia , Dongqing Yang , Ching-Mei Hsu
IPC: H01L21/311 , H01L21/67
Abstract: Exemplary methods for removing nitride may include flowing a fluorine-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may further include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and flowing the plasma effluents into a processing region of the semiconductor processing chamber housing a substrate. The substrate may include a high-aspect-ratio feature. The substrate may further include a region of exposed nitride and a region of exposed oxide. The methods may further include providing a hydrogen-containing precursor to the processing region to produce an etchant. At least a portion of the exposed nitride may be removed with the etchant.
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