公开(公告)号：US20140335679A1

公开(公告)日：2014-11-13

申请号：US13938186

申请日：2013-07-09

Applicant: Applied Materials, Inc.

Inventor： TONG LIU ,  DAVID REYLAND ,  ROHIT MISHRA ,  KHALID MOHIUDDIN SIRAJUDDIN ,  MADHAVA RAO YALAMANCHILI ,  AJAY KUMAR

IPC: H01L21/3065 ,  H01L21/308

CPC classification number: H01L21/3065 ,  H01J37/3244 ,  H01J37/32706 ,  H01J2237/334 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/30655 ,  H01L21/3086 ,  H01L21/76898

Abstract: In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber.

Abstract translation: 在一些实施例中，用于将特征蚀刻到衬底中的方法可以包括将具有设置在衬底上的光致抗蚀剂层的衬底暴露于第一工艺气体，以在光致抗蚀剂层中形成的特征的侧壁和底部的顶部上形成聚合物含有层， 其中所述第一处理气体经由设置在处理室内的第一组气体喷嘴选择性地提供到所述衬底的第一区域; 将基底暴露于基本上没有氧的第二工艺气体，以将特征蚀刻到衬底中，其中通过设置在处理室中的第二组气体喷嘴将第二工艺气体选择性地提供到衬底的第二区域。