公开(公告)号：US11031233B2

公开(公告)日：2021-06-08

申请号：US16576650

申请日：2019-09-19

Applicant: Applied Materials, Inc.

Inventor： Kyeong Tae Lee ,  Sang Wook Kim ,  Daehee Weon ,  Sang-jun Choi ,  Sreekar Bhaviripudi ,  Jahyong Kuh

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/027 ,  H01L21/3213

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

公开(公告)号：US10460921B2

公开(公告)日：2019-10-29

申请号：US13960760

申请日：2013-08-06

Applicant: Applied Materials, Inc.

Inventor： Kyeong Tae Lee ,  Sang Wook Kim ,  Daehee Weon ,  Sang-jun Choi ,  Sreekar Bhaviripudi ,  Jahyong Kuh

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/3213

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

公开(公告)号：US20130319614A1

公开(公告)日：2013-12-05

申请号：US13960760

申请日：2013-08-06

Applicant: Applied Materials, Inc.

Inventor： Kyeong Tae Lee ,  Sang Wook Kim ,  Daehee Weon ,  Sang-jun Choi ,  Sreekar Bhaviripudi ,  Jahyong Kuh

IPC: H01L21/02

CPC classification number: H01L21/02 ,  H01L21/0273 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32139

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.

Abstract translation: 使用沉积在层堆叠上的光致抗蚀剂图案作为第一掩模蚀刻在衬底上的层叠。 使用等离子体原位固化光致抗蚀剂图案。 光致抗蚀剂图案的至少一部分可以通过固化来改性。 在一个实施例中，在等离子体的光刻胶图案上形成硅副产物。 在另一个实施例中，来自等离子体的碳被嵌入到光致抗蚀剂图案中。 在另一个实施例中，等离子体产生紫外光以固化光致抗蚀剂图案。 固化的光致抗蚀剂图案变薄。 使用薄的光致抗蚀剂图案作为第二掩模蚀刻层堆叠。

公开(公告)号：US20200013610A1

公开(公告)日：2020-01-09

申请号：US16576650

申请日：2019-09-19

Applicant: Applied Materials, Inc.

Inventor： Kyeong Tae Lee ,  Sang Wook Kim ,  Daehee Weon ,  Sang-jun Choi ,  Sreekar Bhaviripudi ,  Jahyong Kuh

IPC: H01L21/02

Abstract: A layer stack over a substrate is etched using a photoresist pattern deposited on the layer stack as a first mask. The photoresist pattern is in-situ cured using plasma. At least a portion of the photoresist pattern can be modified by curing. In one embodiment, silicon by-products are formed on the photoresist pattern from the plasma. In another embodiment, a carbon from the plasma is embedded into the photoresist pattern. In yet another embodiment, the plasma produces an ultraviolet light to cure the photoresist pattern. The cured photoresist pattern is slimmed. The layer stack is etched using the slimmed photoresist pattern as a second mask.