公开(公告)号：US20200258744A1

公开(公告)日：2020-08-13

申请号：US16442797

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Gaurav THAREJA ,  Keyvan KASHEFIZADEH ,  Xikun WANG ,  Anchuan WANG ,  Sanjay NATARAJAN ,  Sean M. SEUTTER ,  Dong Wu

IPC: H01L21/28 ,  H01L21/283 ,  H01L29/49 ,  H01L29/45

Abstract: A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a first structure on the substrate in a processing system without breaking vacuum, depositing a third dielectric material over the first structure, and forming a planarized surface of the gates and a surface of the third dielectric material that is disposed over the first structure. The forming of the first structure includes forming trenches by removing second portions of the second dielectric material within each opening, forming recessed active regions in the trenches by partially filling the trenches with a second metal, forming a liner over each recessed active region, and forming a metal cap layer over each liner.

公开(公告)号：US11462411B2

公开(公告)日：2022-10-04

申请号：US17242375

申请日：2021-04-28

Applicant: Applied Materials, Inc.

Inventor： Gaurav Thareja ,  Keyvan Kashefizadeh ,  Xikun Wang ,  Anchuan Wang ,  Sanjay Natarajan ,  Sean M. Seutter ,  Dong Wu

IPC: H01L21/283 ,  H01L29/49 ,  H01L21/28 ,  H01L29/45

Abstract: A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a first structure on the substrate in a processing system without breaking vacuum, depositing a third dielectric material over the first structure, and forming a planarized surface of the gates and a surface of the third dielectric material that is disposed over the first structure. The forming of the first structure includes forming trenches by removing second portions of the second dielectric material within each opening, forming recessed active regions in the trenches by partially filling the trenches with a second metal, forming a liner over each recessed active region, and forming a metal cap layer over each liner.

公开(公告)号：US11004687B2

公开(公告)日：2021-05-11

申请号：US16442797

申请日：2019-06-17

Applicant: Applied Materials, Inc.

Inventor： Gaurav Thareja ,  Keyvan Kashefizadeh ,  Xikun Wang ,  Anchuan Wang ,  Sanjay Natarajan ,  Sean M. Seutter ,  Dong Wu

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/45 ,  H01L21/283

Abstract: A semiconductor device fabrication process includes forming gates on a substrate having a plurality of openings, each gate having a conducting layer a first metal and a gate dielectric layer of a first dielectric material, partially filling the openings with a second dielectric material, forming a first structure on the substrate in a processing system without breaking vacuum, depositing a third dielectric material over the first structure, and forming a planarized surface of the gates and a surface of the third dielectric material that is disposed over the first structure. The forming of the first structure includes forming trenches by removing second portions of the second dielectric material within each opening, forming recessed active regions in the trenches by partially filling the trenches with a second metal, forming a liner over each recessed active region, and forming a metal cap layer over each liner.

公开(公告)号：US10422984B2

公开(公告)日：2019-09-24

申请号：US15615679

申请日：2017-06-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Samer Banna ,  Waheb Bishara ,  Dong Wu ,  Mehdi Vaez-Iravani

IPC: G01N21/00 ,  G02B21/00 ,  G02B23/04 ,  G02B5/02

Abstract: A method for flexible inspection of a sample includes forming an input beam using a beam source, blocking a portion of the input beam using an input mask, and forming a shaped beam from a portion of the input beam. The shaped beam is received at a first portion of an objective lens and focused onto a sample. A reflected beam is collected at a second portion of the objective lens. Scattered light is collected at the first and second portions of the objective lens and at a third portion of the objective lens. The scattered light is received at a dark-field detector module and a portion of the scattered light is directed to a dark-field detector. The dark-field detector module includes an output mask having one or more output apertures that allow at least part of the scattered light that passes through the third portion of the object lens to pass as the portion of the scattered light that is directed to the dark-field detector.

公开(公告)号：US20180329189A1

公开(公告)日：2018-11-15

申请号：US15615679

申请日：2017-06-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Samer Banna ,  Waheb Bishara ,  Dong Wu ,  Mehdi Vaez-Iravani

IPC: G02B21/00 ,  G02B23/04

CPC classification number: G02B21/0032 ,  G02B21/002 ,  G02B21/0092 ,  G02B21/125

Abstract: A method for flexible inspection of a sample includes forming an input beam using a beam source, blocking a portion of the input beam using an input mask, and forming a shaped beam from a portion of the input beam. The shaped beam is received at a first portion of an objective lens and focused onto a sample. A reflected beam is collected at a second portion of the objective lens. Scattered light is collected at the first and second portions of the objective lens and at a third portion of the objective lens. The scattered light is received at a dark-field detector module and a portion of the scattered light is directed to a dark-field detector. The dark-field detector module includes an output mask having one or more output apertures that allow at least part of the scattered light that passes through the third portion of the object lens to pass as the portion of the scattered light that is directed to the dark-field detector.