公开(公告)号：US20040152341A1

公开(公告)日：2004-08-05

申请号：US10763018

申请日：2004-01-21

申请人： Applied Materials, Inc.

发明人： Zhengquan Tan ,  Dongqing LI ,  Walter Zygmunt

IPC分类号： H01L021/31

CPC分类号： C23C16/4558 ,  C23C16/401 ,  C23C16/507 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/31629 ,  H01L21/76229

摘要： A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing source into the substrate processing chamber and forming a plasma from said process gas. The substrate is heated to a temperature above 450null C. during deposition of said silicon oxide layer and the deposited layer has a fluorine content of less than 1.0 atomic percent.

摘要翻译： 一种在设置在高密度等离子体基板处理室中的基板上形成氧化硅层的方法。 该方法包括将包含含硅源，含氧源和含氟源的处理气体流入基板处理室并从所述处理气体形成等离子体。 在沉积所述氧化硅层期间将衬底加热到​​高于450℃的温度，并且沉积层的氟含量小于1.0原子％。