公开(公告)号：US20150134128A1

公开(公告)日：2015-05-14

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Kartik RAMASWAMY ,  Bryan LlAO ,  Sergio SHOJI ,  Duy D. NGUYEN ,  Hamid NOORBAKHSH ,  David PALAGASHVILI

IPC: G05D23/19 ,  G05B15/02 ,  H01J37/32

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20160155612A1

公开(公告)日：2016-06-02

申请号：US15013795

申请日：2016-02-02

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Walter R. MERRY ,  Sergio Fukuda SHOJI ,  Chunlei ZHANG ,  Yashaswini PATTAR ,  Duy D. NGUYEN ,  Tina TSONG ,  Shane C. NEVIL ,  Douglas A. BUCHBERGER, JR. ,  Fernando M. SILVEIRA ,  Brad L. MAYS ,  Kartik RAMASWAMY ,  Hamid NOORBAKHSH

IPC: H01J37/32 ,  G05B6/02

CPC classification number: H01J37/32009 ,  G05B6/02 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/334 ,  H05H1/0081

Abstract: Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，其具有减少的控制器响应时间和增加的稳定性。 温度控制至少部分地基于从输入到处理室的等离子体功率得到的前馈控制信号。 补偿由于等离子体功率引起的温度的干扰的前馈控制信号可以与测量温度和期望温度之间的反馈控制信号抵消误差相组合。