公开(公告)号：US20150134128A1

公开(公告)日：2015-05-14

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan MAHADESWARASWAMY ,  Kartik RAMASWAMY ,  Bryan LlAO ,  Sergio SHOJI ,  Duy D. NGUYEN ,  Hamid NOORBAKHSH ,  David PALAGASHVILI

IPC: G05D23/19 ,  G05B15/02 ,  H01J37/32

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

Abstract translation: 用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。 通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。 控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。 控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

公开(公告)号：US20170358428A1

公开(公告)日：2017-12-14

申请号：US15689529

申请日：2017-08-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Katsumasa KAWASAKI ,  Justin PHI ,  Sergio SHOJI

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/334

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

公开(公告)号：US20170098527A1

公开(公告)日：2017-04-06

申请号：US14886891

申请日：2015-10-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Katsumasa KAWASAKI ,  Justin PHI ,  Sergio SHOJI

IPC: H01J37/32

CPC classification number: H01J37/32091 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/3244 ,  H01J2237/334

Abstract: Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.