公开(公告)号：US11996305B2

公开(公告)日：2024-05-28

申请号：US17362760

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Chaitanya Anjaneyalu Prasad ,  Christopher Sean Olsen ,  Lara Hawrylchak ,  Erika Gabrielle Hansen ,  Daniel C. Glover ,  Naman Apurva ,  Tsung-Han Yang

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67115 ,  H01L21/02238

Abstract: Embodiments of gas distribution modules for use with rapid thermal processing (RTP) systems and methods of use thereof are provided herein. In some embodiments, a gas distribution module for use with a RTP chamber includes: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow internal volume, the vaporizer having a heater configured to vaporize the first mixture; and a first gas delivery line disposed between the vaporizer and the RTP chamber to deliver the vaporized first mixture to the RTP chamber.

公开(公告)号：US20240282601A1

公开(公告)日：2024-08-22

申请号：US18653955

申请日：2024-05-02

Applicant: Applied Materials, Inc.

Inventor： Chaitanya Anjaneyalu Prasad ,  Christopher Sean Olsen ,  Lara Hawrylchak ,  Erika Gabrielle Hansen ,  Daniel C. Glover ,  Naman Apurva ,  Tsung-Han Yang

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67115 ,  H01L21/02238

Abstract: Embodiments of methods of performing a selective oxidation process on non-metal surfaces are provided herein. In some embodiments, a method of performing a selective oxidation process on non-metal surfaces includes: forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves with a mixing line disposed therebetween; flowing the first mixture from the mixer to a vaporizer to vaporize the first mixture outside of an RTP chamber; and delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees Celsius.