公开(公告)号：US20240304495A1

公开(公告)日：2024-09-12

申请号：US18118017

申请日：2023-03-06

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Zhen Liu ,  Yongqian Gao ,  Michael S. Jackson ,  Rongjun Wang

IPC: H01L21/768 ,  C23C16/14 ,  C23C16/455 ,  C23C16/56 ,  H01J37/32

CPC classification number: H01L21/76862 ,  C23C16/14 ,  C23C16/45527 ,  C23C16/56 ,  H01J37/32082 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01J2237/332

Abstract: A method of forming a semiconductor device structure by utilizing a hydrogen plasma treatment to promote selective deposition is disclosed. In some embodiments, the method includes forming a metal layer within at least one feature on the semiconductor device structure. The method includes exposing the metal layer to a hydrogen plasma treatment. The hydrogen plasma treatment preferentially treats the top field and sidewalls while leaving the bottom surface substantially untreated to encourage bottom up metal film growth. In some embodiments, the hydrogen plasma treatment comprises substantially only hydrogen ions.

公开(公告)号：US20240282601A1

公开(公告)日：2024-08-22

申请号：US18653955

申请日：2024-05-02

Applicant: Applied Materials, Inc.

Inventor： Chaitanya Anjaneyalu Prasad ,  Christopher Sean Olsen ,  Lara Hawrylchak ,  Erika Gabrielle Hansen ,  Daniel C. Glover ,  Naman Apurva ,  Tsung-Han Yang

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67115 ,  H01L21/02238

Abstract: Embodiments of methods of performing a selective oxidation process on non-metal surfaces are provided herein. In some embodiments, a method of performing a selective oxidation process on non-metal surfaces includes: forming a first mixture of a carrier gas and a liquid in a mixer having a mixing block coupled to one or more control valves with a mixing line disposed therebetween; flowing the first mixture from the mixer to a vaporizer to vaporize the first mixture outside of an RTP chamber; and delivering the vaporized first mixture to the RTP chamber via a gas delivery line to expose a substrate disposed in the RTP chamber with the vaporized first mixture to perform a selective oxidation process on the substrate at a temperature of about 500 to about 1100 degrees Celsius.

公开(公告)号：US20240240314A1

公开(公告)日：2024-07-18

申请号：US18402079

申请日：2024-01-02

Applicant: Applied Materials, Inc.

Inventor： Zhen Liu ,  Min-Han Lee ,  Jie Zhang ,  Yongqian Gao ,  Tsung-Han Yang ,  Rongjun Wang

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/56

CPC classification number: C23C16/45525 ,  C23C16/06 ,  C23C16/56

Abstract: Embodiments of the disclosure relate to methods for metal gapfill of a logic device with lower resistivity. Specific embodiments provide integrated separate tungsten PVD processes with plasma-etch to solve the overhang issue caused by tungsten PVD and the high resistivity caused by nucleation.

公开(公告)号：US20240167148A1

公开(公告)日：2024-05-23

申请号：US17989767

申请日：2022-11-18

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Shiyu Yue ,  Rongjun Wang

IPC: C23C16/02 ,  B08B7/00 ,  C23C16/06

CPC classification number: C23C16/0227 ,  B08B7/0035 ,  C23C16/06

Abstract: Embodiments of the disclosure are directed to methods of removing metal oxide from a substrate surface by exposing the substrate surface to an un-biased cleaning plasma comprising a mixture of hydrogen (H2) and oxygen (O2). In some embodiments, the substrate surface has at least one feature thereon, the at least one feature defining a trench having a top surface, a bottom surface, and two opposed sidewalls. The un-biased cleaning plasma comprises in a range of from 1% to 20% oxygen (O2) on a molecular basis and greater than or equal to 80% hydrogen (H2). The un-biased cleaning plasma removes substantially all of the metal oxide—such as molybdenum oxide (MoOx), ruthenium oxide (RuOx), or tungsten oxide (WOx)—from the substrate surface, and the top surface, the bottom surface, and the two opposed sidewalls of the trench without damaging the dielectric and/or critical dimension (CD)/profile of the structure.

公开(公告)号：US20240175120A1

公开(公告)日：2024-05-30

申请号：US18512894

申请日：2023-11-17

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Zhen Liu ,  Yongqian Gao ,  Wenting Hou ,  Rongjun Wang

IPC: C23C16/04 ,  C23C16/06 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/045 ,  C23C16/06 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/53266

Abstract: Embodiments of the disclosure relate to methods for metal gapfill with lower resistivity. Specific embodiments provide methods of forming a tungsten gapfill without a high resistance nucleation layer. Some embodiments of the disclosure utilize a nucleation underlayer to promote growth of the metal gapfill.

公开(公告)号：US11996305B2

公开(公告)日：2024-05-28

申请号：US17362760

申请日：2021-06-29

Applicant: Applied Materials, Inc.

Inventor： Chaitanya Anjaneyalu Prasad ,  Christopher Sean Olsen ,  Lara Hawrylchak ,  Erika Gabrielle Hansen ,  Daniel C. Glover ,  Naman Apurva ,  Tsung-Han Yang

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67115 ,  H01L21/02238

Abstract: Embodiments of gas distribution modules for use with rapid thermal processing (RTP) systems and methods of use thereof are provided herein. In some embodiments, a gas distribution module for use with a RTP chamber includes: a first carrier gas line and a first liquid line fluidly coupled to a mixer, the mixer having one or more control valves configured to mix a carrier gas from the first carrier gas line and a liquid from the first liquid line in a desired ratio to form a first mixture; a vaporizer coupled to the mixer and configured to receive the first mixture in a hollow internal volume, the vaporizer having a heater configured to vaporize the first mixture; and a first gas delivery line disposed between the vaporizer and the RTP chamber to deliver the vaporized first mixture to the RTP chamber.

公开(公告)号：US11761080B2

公开(公告)日：2023-09-19

申请号：US17142052

申请日：2021-01-05

Applicant: Applied Materials, Inc.

Inventor： Tsung-Han Yang ,  Christopher S. Olsen

IPC: C30B25/16 ,  C23C16/455 ,  C23C14/48 ,  C23C16/52 ,  C30B25/14 ,  C23C14/54

CPC classification number: C23C16/45502 ,  C23C14/48 ,  C23C14/54 ,  C23C16/45548 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165

Abstract: Aspects of the present disclosure generally relate to oscillating a boundary layer of a flow of process gas in methods and systems for processing substrates. In one aspect, one or more of a pressure, a gas flow rate, and/or a height of a substrate are oscillated during processing. In one implementation, a method of processing a substrate includes conducting a processing operation on the substrate in an interior volume of a processing chamber. The conducting the processing operation on the substrate includes moving a flow of one or more process gases over a surface of the substrate. The method also includes oscillating a boundary layer of the flow of one or more process gases while the flow of one or more process gases moves over the surface of the substrate.