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    Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes
    1.
    发明申请
    Stress reduction of SIOC low k film by addition of alkylenes to OMCTS based processes 审中-公开
    通过在基于OMCTS的工艺中加入亚烷基来降低SIOC低k膜的应力

    公开(公告)号：US20040253378A1

    公开(公告)日：2004-12-16

    申请号：US10461638

    申请日：2003-06-12

    申请人： Applied Materials, Inc.

    发明人： Francimar C. Schmitt ,  Hichem M'Saad

    IPC分类号： C23C016/00

    CPC分类号： H01L21/31633 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

    摘要： A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

    摘要翻译： 介电常数约为3.2以下，优选为3.0以下的低介电常数膜的制造方法包括向基板表面提供具有至少一个不饱和碳 - 碳键的环状有机硅氧烷和线性烃化合物。 一方面，环状有机硅氧烷和直链烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下进行反应。 优选地，低介电常数膜具有压应力。