公开(公告)号：US20030211244A1

公开(公告)日：2003-11-13

申请号：US10409887

申请日：2003-04-08

Applicant: Applied Materials, Inc.

Inventor： Lihua Li ,  Wen H. Zhu ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Ellie Y. Yieh ,  Son Van Nguyen ,  Lester A. D'Cruz ,  Troy Kim ,  Dian Sugiarto ,  Peter Wai-Man Lee ,  Hichem M'Saad ,  Melissa M. Tam ,  Yi Zheng ,  Srinivas D. Nemani

IPC: B05D005/12 ,  C23C016/00 ,  B05D003/00

CPC classification number: C09D4/00 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02351 ,  H01L21/3122 ,  C08G77/00

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided by reacting a gas mixture including one or more organosilicon compounds and one or more oxidizing gases. In one aspect, the organosilicon compound comprises a hydrocarbon component having one or more unsaturated carbon-carbon bonds, and in another aspect, the gas mixture further comprises one or more aliphatic hydrocarbon compounds having one or more unsaturated carbon-carbon bonds. The low dielectric constant film is post-treated after it is deposited. In one aspect, the post treatment is an electron beam treatment, and in another aspect, the post-treatment is an annealing process.

Abstract translation: 通过使包含一种或多种有机硅化合物和一种或多种氧化性气体的气体混合物反应，提供介电常数为约3.0以下，优选约2.5以下的低介电常数膜的方法。 一方面，有机硅化合物包含具有一个或多个不饱和碳 - 碳键的烃组分，另一方面，气体混合物还包含一种或多种具有一个或多个不饱和碳 - 碳键的脂族烃化合物。 沉积后对低介电常数膜进行后处理。 一方面，后处理是电子束处理，另一方面，后处理是退火处理。

公开(公告)号：US20040214446A1

公开(公告)日：2004-10-28

申请号：US10732904

申请日：2003-12-10

Applicant: APPLIED MATERIALS, INC.

Inventor： Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti ,  Miguel Fung ,  Keebum Jung ,  Lei Zhu

IPC: H01L021/302

CPC classification number: H01L21/76828 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  Y10S438/952

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

Abstract translation: 提供了沉积电介质材料的方法。 电介质材料可用于抗反射涂层或硬掩模。 一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和含氧和碳的化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料 。 介电材料包括硅和氧。 在另一方面，电介质材料在双层抗反射涂层中形成一层或两层。

公开(公告)号：US20030050724A1

公开(公告)日：2003-03-13

申请号：US09949414

申请日：2001-09-05

Applicant: Applied Materials, Inc.

Inventor： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC: G06F019/00 ,  C23C016/00

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

Abstract translation: 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏压功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US20040235292A1

公开(公告)日：2004-11-25

申请号：US10442359

申请日：2003-05-20

Applicant: Applied Materials, Inc.

Inventor： Nagarajan Rajagopalan ,  Meiyee Shek ,  Kegang Huang ,  Bok Hoen Kim ,  Hichem M'Saad ,  Thomas Nowak

IPC: H01L021/4763

CPC classification number: H01L21/76838 ,  H01L21/02074 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76828 ,  H01L21/7684

Abstract: Unwanted hillocks arising in copper layers due to formation of overlying barrier layers may be significantly reduced by optimizing various process parameters, alone or in combination. A first set of process parameters may be controlled to pre-condition the processing chamber in which the barrier layer is deposited. A second set of process parameters may be controlled to minimize energy to which a copper layer is exposed during removal of CuO prior to barrier deposition. A third set of process parameters may be controlled to minimize the thermal budget after removal of the copper oxide.

公开(公告)号：US20040009676A1

公开(公告)日：2004-01-15

申请号：US10193489

申请日：2002-07-11

Applicant: Applied Materials, Inc.

Inventor： Bok Hoen Kim ,  Sudha Rathi ,  Sang H. Ahn ,  Christopher D. Bencher ,  Yuxiang May Wang ,  Hichem M'Saad ,  Mario D. Silvetti

IPC: H01L021/31

CPC classification number: H01L21/76834 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/314 ,  H01L21/31633 ,  H01L21/7681 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829

Abstract: Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an organosilicon compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen.

Abstract translation: 提供了沉积电介质材料的方法。 电介质材料可用于抗反射涂层或硬掩模。 一方面，提供了一种处理基板的方法，包括将包含硅烷类化合物和有机硅化合物的处理气体引入处理室，并使处理气体在基板上沉积无氮介电材料。 介电材料包括硅和氧。

公开(公告)号：US20030032282A1

公开(公告)日：2003-02-13

申请号：US10194398

申请日：2002-07-12

Applicant: Applied Materials, Inc.

Inventor： Hichem M'Saad ,  Seon Mee Cho ,  Dana Tribula

IPC: H01L021/44 ,  H01L021/31 ,  H01L021/469

CPC classification number: C23C16/325 ,  H01L21/314 ,  H01L21/3146 ,  Y10S438/931

Abstract: A method is provided for depositing a barrier layer on a substrate using a gaseous mixture that includes a hydrocarbon-containing gas and a silicon-containing gas. The gaseous mixture is provided to a process chamber and is used to form a plasma for depositing the barrier layer. The barrier layer is deposited with a thickness less than 500 null. Suitable hydrocarbon-containing gases include alkanes and suitable silicon-containing gases include silanes.

Abstract translation: 提供了一种使用包括含烃气体和含硅气体的气体混合物在基板上沉积阻挡层的方法。 将气体混合物提供到处理室，并用于形成用于沉积阻挡层的等离子体。 阻挡层以小于500埃的厚度沉积。 合适的含烃气体包括烷烃，合适的含硅气体包括硅烷。

公开(公告)号：US20020150682A1

公开(公告)日：2002-10-17

申请号：US10120713

申请日：2002-04-10

Applicant: Applied Materials, Inc.

Inventor： Hichem M'Saad ,  Dana Tribula ,  Manoj Vellaikal ,  Farhad Moghadam ,  Sameer Desai

IPC: C23C016/00 ,  C23C008/00 ,  C23C010/10 ,  C23C016/24 ,  C23C016/08

CPC classification number: H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629

Abstract: A method of formation of a damascene FSG film with good adhesion to silicon nitride in an HDP-CVD system. Silane (SiH4), silicon tetrafluoride (SiF4), oxygen (O2) and argon (Ar) are used as the reactant gases. SiH4, SiF4, and O2 react to form the FSG. Ar is introduced to promote gas dissociation. All four gases are used for depositing most of the FSG film. SiH4 is not used during deposition of the interfacial part of the FSG film. The interfacial part of the FSG film refers either to the topmost portion, if silicon nitride is to be deposited on top of the FSG or the bottom portion if the FSG is to be deposited on top of silicon nitride. Using SiH4 with the SiF4 tends to mitigate the destructive effects of SiF4 throughout most of the deposition. By removing the SiH4 from the deposition of the interfacial part of the FSG film less hydrogen is incorporated into the film in the interfacial region and adhesion to overlying or underlying silicon nitride is improved.

Abstract translation: 在HDP-CVD系统中形成对氮化硅具有良好粘附性的镶嵌FSG膜的方法。 使用硅烷（SiH 4），四氟化硅（SiF 4），氧（O 2）和氩（Ar）作为反应气体。 SiH4，SiF4和O2反应形成FSG。 引入Ar来促进气体分解。 所有四种气体都用于沉积大部分FSG膜。 在沉积FSG膜的界面部分期间不使用SiH4。 如果要将FSG沉积在氮化硅的顶部，则FSG膜的界面部分指的是最高部分，如果氮化硅沉积在FSG或底部的顶部。 SiF4与SiF4的共同作用倾向于减少SiF4在大部分沉积过程中的破坏作用。 通过从FSG膜的界面部分的沉积中除去SiH 4，在界面区域中较少的氢被引入到膜中，并且改善了覆盖或下面的氮化硅的粘合性。

公开(公告)号：US20040253378A1

公开(公告)日：2004-12-16

申请号：US10461638

申请日：2003-06-12

Applicant: Applied Materials, Inc.

Inventor： Francimar C. Schmitt ,  Hichem M'Saad

IPC: C23C016/00

CPC classification number: H01L21/31633 ,  C23C16/30 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274

Abstract: A method for depositing a low dielectric constant film having a dielectric constant of about 3.2 or less, preferably about 3.0 or less, includes providing a cyclic organosiloxane and a linear hydrocarbon compound having at least one unsaturated carbon-carbon bond to a substrate surface. In one aspect, the cyclic organosiloxane and the linear hydrocarbon compound are reacted at conditions sufficient to deposit a low dielectric constant film on the semiconductor substrate. Preferably, the low dielectric constant film has compressive stress.

Abstract translation: 介电常数约为3.2以下，优选为3.0以下的低介电常数膜的制造方法包括向基板表面提供具有至少一个不饱和碳 - 碳键的环状有机硅氧烷和线性烃化合物。 一方面，环状有机硅氧烷和直链烃化合物在足以在半导体衬底上沉积低介电常数膜的条件下进行反应。 优选地，低介电常数膜具有压应力。

公开(公告)号：US20040185674A1

公开(公告)日：2004-09-23

申请号：US10391143

申请日：2003-03-17

Applicant: Applied Materials, Inc.

Inventor： Hichem M'Saad ,  Sang Ahn

IPC: H01L021/31

CPC classification number: H01L21/02164 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3148 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76802

Abstract: A layer of nitrogen-free oxide material is formed as a hard mask to minimize resist poisoning during patterning of low K dielectric layers. In one embodiment, the oxide hard mask material has the formula SiwOx, where w and x represent the atomic percentage of silicon and oxygen, respectively, in the material and where w is about 1 and x is about 2, and the density of nitrogen in the silicon oxide material of the hard mask is less than or equal to about 1null1016 atoms/cm3.

Abstract translation: 形成一层无氮氧化物材料作为硬掩模，以在低K电介质层的图案化期间最小化抗蚀剂中毒。 在一个实施方案中，氧化物硬掩模材料具有式SiwO x，其中w和x分别表示材料中硅和氧的原子百分比，其中w为约1且x为约2，氮的密度为 硬掩模的氧化硅材料小于或等于约1×10 16原子/ cm 3。

公开(公告)号：US20040087139A1

公开(公告)日：2004-05-06

申请号：US10288123

申请日：2002-11-04

Applicant: Applied Materials, Inc.

Inventor： Wendy H. Yeh ,  Sang Ahn ,  Christopher Dennis Bencher ,  Hichem M'Saad ,  Sudha Rathi

IPC: H01L021/4763

CPC classification number: H01L21/76811 ,  C03C17/22 ,  C03C2217/213 ,  C03C2217/282 ,  C23C16/30 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76813

Abstract: A layer of antireflective coating (ARC) material for use in photolithographic processing. In one embodiment the ARC material has the formula SiwOxHy:Cz, where w, x, y and z represent the atomic percentage of silicon, oxygen, hydrogen and carbon, respectively, in the material and where w is between 35 and 55, x is between 35 and 55, y is between 4 and 15, z is between 0 and 3 and the atomic percentage of nitrogen in the material is less than or equal to 1 atomic percent.

Abstract translation: 用于光刻处理的一层抗反射涂层（ARC）材料。 在一个实施方案中，ARC材料具有式SiwO x H y：Cz，其中w，x，y和z分别表示材料中硅，氧，氢和碳的原子百分比，其中w在35和55之间，x是 在35和55之间，y在4和15之间，z在0和3之间，材料中氮的原子百分比小于或等于1原子％。