公开(公告)号：US20150311067A1

公开(公告)日：2015-10-29

申请号：US14261017

申请日：2014-04-24

Applicant: Applied Materials, Inc.

Inventor： Shashank SHARMA ,  Jau-Jiun CHEN ,  Wolfgang R. ADERHOLD ,  Kai NG ,  Houda GRAOUI ,  Shankar MUTHUKRISHNAN ,  Abhilash J. MAYUR ,  Gia PHAM

IPC: H01L21/02

CPC classification number: H01L21/02337 ,  H01L21/02332 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/28202

Abstract: Embodiments of the present disclosure relate to methods for processing a substrate. In one embodiment, the method includes forming a dielectric layer over a substrate, wherein the dielectric layer has a dielectric value of about 3.9 or greater, heating the substrate to a first temperature of about 600 degrees Celsius or less by a heater of a substrate support disposed within a process chamber, and incorporating nitrogen into the dielectric layer in the process chamber by annealing the dielectric layer at a second temperature between about 650 and about 1450 degrees Celsius in an ambient nitrogen environment, wherein the annealing is performed on the order of millisecond scale.

Abstract translation: 本公开的实施例涉及用于处理衬底的方法。 在一个实施例中，该方法包括在衬底上形成电介质层，其中电介质层的电介质值约为3.9或更大，通过衬底支撑件的加热器将衬底加热至约600摄氏度或更低的第一温度 设置在处理室内，并且通过在环境氮环境中在约650℃和约1450摄氏度之间的第二温度下退火介电层，将氮气并入处理室中的介电层中，其中退火是在毫秒级 规模。

公开(公告)号：US20170307310A1

公开(公告)日：2017-10-26

申请号：US15472691

申请日：2017-03-29

Applicant: Applied Materials, Inc.

Inventor： Jianqi WANG ,  Joung Woo LEE ,  Gia PHAM ,  Alex GERRARD ,  Robert C. MCINTOSH

IPC: F28F19/00 ,  H01L21/67 ,  F28F23/00

CPC classification number: F28F19/00 ,  C09K5/10 ,  F28F23/00 ,  H01L21/67098 ,  H01L21/67109 ,  H01L21/67253

Abstract: Implementations described herein generally relate to substrate processing equipment and more particularly to methods and compositions for temperature control of substrate processing equipment. In one implementation, a method of cooling a processing chamber component is provided. The method comprises introducing an inert purge gas into a supply reservoir containing a coolant and flowing the treated coolant to a processing chamber component to cool the processing chamber component. The coolant initially comprises deionized water and a water-soluble base.