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公开(公告)号：US20230069444A1
公开(公告)日：2023-03-02
申请号：US17463177
申请日：2021-08-31
发明人： Wolfgang R. ADERHOLD , Abhilash J. MAYUR , Yi WANG
摘要： Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.
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公开(公告)号：US20160234881A1
公开(公告)日：2016-08-11
申请号：US15012885
申请日：2016-02-02
发明人： Preetham RAO , Abhilash J. MAYUR
CPC分类号： H05B3/0047 , F27B17/0025 , F27D5/0037 , H01L21/67115 , H01L21/67248
摘要： A lamphead for thermal processing of a substrate is provided. The lamphead includes a housing having a first edge surrounding a first plane. The lamphead further includes a plurality of segmented lamps disposed within the housing, each segmented lamp aligned substantially parallel to the first plane. Each segmented lamp includes a first end connected to a location on the housing; a first wire segment connected to the first end; a first filament connected to the first wire segment; an intermediate wire segment connected to the first filament; a second filament connected to intermediate wire segment; a second wire segment connected to the second filament; and a second end connected to the second wire segment; where the second end is connected to an opposing location on the housing.
摘要翻译： 提供了一种用于基板的热处理的灯头。 灯头包括具有围绕第一平面的第一边缘的壳体。 灯头还包括设置在壳体内的多个分段灯，每个分段灯基本上平行于第一平面排列。 每个分段灯包括连接到壳体上的位置的第一端; 连接到第一端的第一线段; 连接到第一线段的第一灯丝; 连接到第一细丝的中间线段; 连接到中间线段的第二个灯丝; 连接到所述第二细丝的第二线段; 以及连接到所述第二线段的第二端; 其中第二端连接到壳体上的相对位置。
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3.发明公开公开(公告)号：US20230295789A1
公开(公告)日：2023-09-21
申请号：US17695475
申请日：2022-03-15
发明人： David JORGENSEN , Jian WU , Abhilash J. MAYUR
摘要： This application generally relates to a chamber component for a thermal processing chamber comprising a base component having a coating disposed thereon, the coating having a base component having a coating disposed thereon, the coating includes a surface, a thickness, and a plurality of cracks extending from the surface of the coating through at least 40 percent of the thickness of the coating.
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公开(公告)号：US20220108914A1
公开(公告)日：2022-04-07
申请号：US17398899
申请日：2021-08-10
IPC分类号： H01L21/768 , H01L27/108
摘要： Embodiments herein are directed to methods of forming titanium nitride films suitable for use as a bulk fill material for conductive features in a semiconductor device, such as for capacitor electrodes and/or buried word lines in a dynamic random-access memory (DRAM) device. In one embodiment, a method of forming conductive features in a semiconductor device is provided. The method includes thermally treating a substrate surface comprising at least portions of a titanium nitride layer in the presence of hydrogen radicals. Thermally treating the substrate includes positioning the substrate in a processing volume of a processing chamber, heating the substrate to a treatment temperature of more than about 250° C., generating the hydrogen radicals using a remote plasma source fluidly coupled to the processing volume, and maintaining the substrate at the treatment temperature while concurrently exposing the at least portions of the titanium nitride layer to the generated hydrogen radicals. Here, the substrate includes a field surface having a plurality of openings formed therein and the at least portions of the titanium nitride layer are disposed in the plurality of openings.
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公开(公告)号：US20180337075A1
公开(公告)日：2018-11-22
申请号：US15982785
申请日：2018-05-17
发明人： Dongming IU , Kartik SHAH , Norman L. TAM , Matthew SPULLER , Jau-Jiun CHEN , Kong Lung Samuel CHAN , Elizabeth NEVILLE , Preetham RAO , Abhilash J. MAYUR , Gia Pham
IPC分类号： H01L21/67 , C23C16/56 , C23C16/458 , C23C16/455
摘要： Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.
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公开(公告)号：US20140270736A1
公开(公告)日：2014-09-18
申请号：US14287782
申请日：2014-05-27
IPC分类号： H01L21/673 , H01L21/67
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.
摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供了一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个翅片。 翅片可以相对于边缘环的主体具有至少一个倾斜侧面。
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公开(公告)号：US20210280418A1
公开(公告)日：2021-09-09
申请号：US17123386
申请日：2020-12-16
发明人： Xinming ZHANG , Abhilash J. MAYUR , Shashank SHARMA , Norman L. TAM , Matthew SPULLER , Zeqiong ZHAO
IPC分类号： H01L21/02 , H01L27/11556
摘要： The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.
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公开(公告)号：US20210053147A1
公开(公告)日：2021-02-25
申请号：US17090709
申请日：2020-11-05
发明人： Dean JENNINGS , Haifan LIANG , Mark YAM , Vijay PARIHAR , Abhilash J. MAYUR , Aaron Muir HUNTER , Bruce E. ADAMS , Joseph M. RANISH
IPC分类号： B23K26/06 , B23K26/352 , B23K26/073 , H01L21/324 , H01L21/268
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
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公开(公告)号：US20190139773A1
公开(公告)日：2019-05-09
申请号：US16200538
申请日：2018-11-26
发明人： Paul CAREY , Aaron Muir HUNTER , Dean JENNINGS , Abhilash J. MAYUR , Stephen MOFFATT , William SCHAFFER , Timothy N. THOMAS , Mark YAM
IPC分类号： H01L21/265 , H01L21/268 , H01L29/66 , H01L29/06 , H01L21/324
摘要： The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.
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公开(公告)号：US20200032386A1
公开(公告)日：2020-01-30
申请号：US16519845
申请日：2019-07-23
IPC分类号： C23C14/50 , C23C14/48 , H01L21/687 , H01L21/67
摘要： A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.
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