-
公开(公告)号:US12211736B2
公开(公告)日:2025-01-28
申请号:US17515773
申请日:2021-11-01
Applicant: Applied Materials, Inc.
Inventor: Hurshvardhan Srivastava , Keith T. Wong
IPC: H01L21/762 , C23C16/40 , H01L21/02 , H01J37/32
Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.
-
公开(公告)号:US11626284B2
公开(公告)日:2023-04-11
申请号:US17150781
申请日:2021-01-15
Applicant: Applied Materials, Inc.
Inventor: Keith T. Wong , Hurshvardhan Srivastava , Srinivas D. Nemani , Johannes M. van Meer , Rajesh Prasad
IPC: H01L21/02 , H01L29/66 , C23C14/58 , H01L29/76 , C23C16/30 , C23C16/455 , C23C16/56 , C23C14/48 , H01L29/24
Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.
-
公开(公告)号:US20220139765A1
公开(公告)日:2022-05-05
申请号:US17515773
申请日:2021-11-01
Applicant: Applied Materials, Inc.
Inventor: Hurshvardhan Srivastava , Keith T. Wong
IPC: H01L21/762 , H01L21/02 , C23C16/40
Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.
-
公开(公告)号:US20220108886A1
公开(公告)日:2022-04-07
申请号:US17150781
申请日:2021-01-15
Applicant: Applied Materials, Inc.
Inventor: Keith T. Wong , Hurshvardhan Srivastava , Srinivas D. Nemani , Johannes M. van Meer , Rajesh Prasad
IPC: H01L21/02 , H01L29/66 , H01L29/24 , H01L29/76 , C23C16/30 , C23C16/455 , C23C16/56 , C23C14/48 , C23C14/58
Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.
-
-
-