公开(公告)号：US12211736B2

公开(公告)日：2025-01-28

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  C23C16/40 ,  H01L21/02 ,  H01J37/32

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US11626284B2

公开(公告)日：2023-04-11

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  C23C14/58 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  H01L29/24

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.

公开(公告)号：US20220139765A1

公开(公告)日：2022-05-05

申请号：US17515773

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Hurshvardhan Srivastava ,  Keith T. Wong

IPC: H01L21/762 ,  H01L21/02 ,  C23C16/40

Abstract: Exemplary deposition methods may include introducing a vapor of a metal alkoxide into a processing volume of a semiconductor processing chamber. A substrate defining a trench may be housed in the processing volume. The methods may include condensing the vapor into a liquid metal alkoxide within the trench on the substrate. The methods may include forming a plasma external to the processing volume of the semiconductor processing chamber. The methods may include introducing plasma-generated species into the processing volume. The methods may include exposing the liquid metal alkoxide in the trench to the plasma-generated species. The methods may also include forming a metal oxide film in the trench through a reaction between the liquid metal alkoxide and the plasma-generated species.

公开(公告)号：US20220108886A1

公开(公告)日：2022-04-07

申请号：US17150781

申请日：2021-01-15

Applicant: Applied Materials, Inc.

Inventor： Keith T. Wong ,  Hurshvardhan Srivastava ,  Srinivas D. Nemani ,  Johannes M. van Meer ,  Rajesh Prasad

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H01L29/76 ,  C23C16/30 ,  C23C16/455 ,  C23C16/56 ,  C23C14/48 ,  C23C14/58

Abstract: A method to form a 2-Dimensional transistor channel may include depositing an amorphous layer comprising a 2-dimensional material, implanting an implant species into the amorphous layer; and annealing the amorphous layer after the implanting. As such, the amorphous layer may form a doped crystalline layer.