公开(公告)号：US20150072509A1

公开(公告)日：2015-03-12

申请号：US14459357

申请日：2014-08-14

Applicant: Applied Materials, Inc.

Inventor： Hyo-In CHI ,  Farzad Dean TAJIK ,  Michel Anthony ROSA

IPC: H01L21/02

CPC classification number: H01L21/0262 ,  C23C16/0272 ,  C23C16/42 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02579

Abstract: Embodiments of the present invention generally relate to methods for forming a SiGe layer. In one embodiment, a seed SiGe layer is first formed using plasma enhanced chemical vapor deposition (PECVD), and a bulk SiGe layer is formed directly on the PECVD seed layer also using PECVD. The processing temperature for both seed and bulk SiGe layers is less than 450 degrees Celsius.

Abstract translation: 本发明的实施方案一般涉及形成SiGe层的方法。 在一个实施例中，首先使用等离子体增强化学气相沉积（PECVD）形成种子SiGe层，并且还使用PECVD直接在PECVD晶种层上形成体SiGe层。 种子和体积SiGe层的处理温度低于450摄氏度。