公开(公告)号：US20160064209A1

公开(公告)日：2016-03-03

申请号：US14934923

申请日：2015-11-06

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01L21/02 ,  B08B7/00

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

公开(公告)号：US20200328066A1

公开(公告)日：2020-10-15

申请号：US16829573

申请日：2020-03-25

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Dong Hyung LEE ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Irfan JAMIL ,  Pyeong Youn ROH ,  Jun MA ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

公开(公告)号：US20160133443A1

公开(公告)日：2016-05-12

申请号：US15000857

申请日：2016-01-19

Applicant: Applied Materials, Inc.

Inventor： Kwangduk Douglas LEE ,  Sudha RATHI ,  Ramprakash SANKARAKRISHNAN ,  Martin Jay SEAMONS ,  Irfan JAMIL ,  Bok Hoen KIM

IPC: H01J37/32 ,  B08B7/00

CPC classification number: H01J37/32853 ,  B08B7/0035 ,  G03F7/427 ,  H01L21/02041 ,  H01L21/31116

Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.

Abstract translation: 本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。 在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。 在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。 除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。 在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。 在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。 聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。