公开(公告)号：US10468221B2

公开(公告)日：2019-11-05

申请号：US16122003

申请日：2018-09-05

Applicant: Applied Materials, Inc.

Inventor： Gaku Furuta ,  Soo Young Choi ,  Yi Cui ,  Robin L. Tiner ,  Jinhyun Cho ,  Jiarui Wang ,  Suhail Anwar

IPC: C23C16/00 ,  H01J29/07 ,  C23C16/458 ,  C23C16/04 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

公开(公告)号：US20200058497A1

公开(公告)日：2020-02-20

申请号：US15999206

申请日：2018-08-20

Applicant: Applied Materials, Inc

Inventor： Tae Kyung Won ,  Soo Young Choi ,  Jinhyun Cho ,  Yi Cui ,  Gaku Furuta

IPC: H01L21/02

Abstract: Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited over large substrates. When the precursor gas or gas mixture in the chamber is energized by applying radio frequency (RF) power to the chamber, the RF current flowing through the plasma generates a standing wave effect (SWE) in an inter-electrode gap. SWEs become significant as substrate or electrode size approaches the RF wavelength. Process parameters, such as process power, process pressure, electrode spacing, and gas flow ratios all affect the SWE. These parameters can be altered in order to minimize the SWE problem and to achieve acceptable thickness and properties uniformities. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates, while achieving various plasma densities will act to reduce the SWE, creating greater plasma stability.