公开(公告)号：US10468221B2

公开(公告)日：2019-11-05

申请号：US16122003

申请日：2018-09-05

Applicant: Applied Materials, Inc.

Inventor： Gaku Furuta ,  Soo Young Choi ,  Yi Cui ,  Robin L. Tiner ,  Jinhyun Cho ,  Jiarui Wang ,  Suhail Anwar

IPC: C23C16/00 ,  H01J29/07 ,  C23C16/458 ,  C23C16/04 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

公开(公告)号：US10312475B2

公开(公告)日：2019-06-04

申请号：US15613667

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung Won ,  Soo Young Choi ,  Sanjay D. Yadav ,  Carl A. Sorensen ,  Chien-Teh Kao ,  Suhail Anwar ,  Young Dong Lee

IPC: H01L21/00 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00

Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

公开(公告)号：US12080516B2

公开(公告)日：2024-09-03

申请号：US17456236

申请日：2021-11-23

Applicant: Applied Materials, Inc.

Inventor： Zheng John Ye ,  Jianhua Zhou ,  Shouqian Shao ,  Suhail Anwar

IPC: C23C16/34 ,  C23C16/30 ,  C23C16/40 ,  C23C16/505 ,  H01J37/32

CPC classification number: H01J37/32119 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/505 ,  H01J37/32532 ,  H01J2237/332

Abstract: The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

公开(公告)号：US10312058B2

公开(公告)日：2019-06-04

申请号：US15719465

申请日：2017-09-28

Applicant: Applied Materials, Inc.

Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

Abstract: Embodiments of a method of depositing a thin film on a substrate is provided that includes placing a substrate on a substrate support that is mounted in a processing region of a processing chamber, flowing a process fluid through a plurality of gas passages in a diffuser plate toward the substrate supported on the substrate support, wherein the diffuser plate has an upstream side and a downstream side and the downstream side has a substantially concave curvature, and each of the gas passages are formed between the upstream side and the downstream side, and creating a plasma between the downstream side of the diffuser plate and the substrate support.

公开(公告)号：US10262837B2

公开(公告)日：2019-04-16

申请号：US14932618

申请日：2015-11-04

Applicant: Applied Materials, Inc.

Inventor： Soo Young Choi ,  John M. White ,  Qunhua Wang ,  Li Hou ,  Ki Woon Kim ,  Shinichi Kurita ,  Tae Kyung Won ,  Suhail Anwar ,  Beom Soo Park ,  Robin L. Tiner

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/509

Abstract: Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

公开(公告)号：US09827578B2

公开(公告)日：2017-11-28

申请号：US14726067

申请日：2015-05-29

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

IPC: B05B1/18 ,  H01J37/32 ,  C23C16/509 ,  C23C16/455

CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

公开(公告)号：US09818580B2

公开(公告)日：2017-11-14

申请号：US14727857

申请日：2015-06-01

Applicant: Applied Materials, Inc.

Inventor： Jozef Kudela ,  Tsutomu Tanaka ,  Carl A. Sorensen ,  Suhail Anwar ,  John M. White ,  Ranjit Indrajit Shinde ,  Seon-Mee Cho ,  Douglas D. Truong

IPC: H05H1/24 ,  H01J37/32 ,  H01P3/00 ,  H01P11/00 ,  H05H1/46 ,  H01P3/06 ,  H01P3/08 ,  H01Q13/22

CPC classification number: H01J37/32082 ,  H01J37/3222 ,  H01J37/32577 ,  H01P3/00 ,  H01P3/06 ,  H01P3/085 ,  H01P11/003 ,  H01Q13/22 ,  H05H1/24 ,  H05H1/46 ,  H05H2001/463 ,  Y10T29/49169

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

公开(公告)号：US09214340B2

公开(公告)日：2015-12-15

申请号：US14608080

申请日：2015-01-28

Applicant: Applied Materials, Inc.

Inventor： Shinichi Kurita ,  Srikanth V. Racherla ,  Suhail Anwar

IPC: H01L21/00 ,  H01L21/16 ,  H01L21/20 ,  H01L21/36 ,  H01L21/02 ,  C23C16/44 ,  C23C16/505 ,  C23C16/50 ,  C23C16/52 ,  C23C16/24 ,  H01L29/786

CPC classification number: H01L21/02565 ,  C23C16/24 ,  C23C16/407 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02554 ,  H01L21/0262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: The embodiments of the disclosure may generally provide a method and apparatus for forming thin film transistor device that includes an indium gallium zinc oxide (IGZO) layer using a multi-component precursor gas. The embodiments of the disclosure may provide a plasma enhanced chemical vapor deposition system configured to form an IGZO layer on large area substrates. However, it should be understood that the disclosure has utility in other system configurations such other types of chemical vapor deposition systems and any other system in which distributing a multi-component precursor gas to and within a process chamber is desired.

Abstract translation: 本公开的实施例通常可以提供一种用于形成薄膜晶体管器件的方法和装置，其包括使用多组分前体气体的铟镓锌氧化物（IGZO）层。 本公开的实施例可以提供等离子体增强化学气相沉积系统，其被配置为在大面积基板上形成IGZO层。 然而，应当理解，本公开在其他系统配置中具有实用性，例如其它类型的化学气相沉积系统和其中将多组分前体气体分配到处理室内和在处理室内的任何其它系统。

公开(公告)号：US10903048B2

公开(公告)日：2021-01-26

申请号：US16031701

申请日：2018-07-10

Applicant: Applied Materials, Inc.

Inventor： Yui Lun Wu ,  Jozef Kudela ,  Carl A. Sorensen ,  Suhail Anwar

IPC: C23C16/52 ,  C23C16/44 ,  C23C16/455 ,  C23C16/509 ,  H01J37/32 ,  H03H7/38 ,  H03H7/40

Abstract: A method of processing a material layer on a substrate is provided. The method includes delivering RF power from an RF power source through a match network to a showerhead of a capacitively coupled plasma chamber; igniting a plasma within the capacitively coupled plasma chamber; measuring one or more phase angles of one or more harmonic signals of the RF power relative to a phase of a fundamental frequency of the RF power; and adjusting at least one phase angle of at least one harmonic signal of the RF power relative to the phase of the fundamental frequency of the RF power based on the one or more phase angle measurements.

公开(公告)号：US10453718B2

公开(公告)日：2019-10-22

申请号：US14035829

申请日：2013-09-24

Applicant: Applied Materials, Inc.

Inventor： Mehran Behdjat ,  Shinichi Kurita ,  John M. White ,  Suhail Anwar ,  Makoto Inagawa

IPC: H01L21/67 ,  F16K51/02

Abstract: Embodiments disclosed herein generally relate to a slit valve door assembly for sealing an opening in a chamber. A slit valve door that is pressed against the chamber to seal the slit valve opening moves with the chamber as the slit valve opening shrinks so that an o-ring pressed between the slit valve door and the chamber may move with the slit valve door and the chamber. Thus, less rubbing of the o-ring against the chamber may occur. With less rubbing, fewer particles may be generated and the o-ring lifetime may be extended. With a longer lifetime for the o-ring, substrate throughput may be increased.