公开(公告)号：US11380572B2

公开(公告)日：2022-07-05

申请号：US16857082

申请日：2020-04-23

申请人： Applied Materials, Inc.

发明人： Stephen Donald Prouty ,  Andreas Schmid ,  Jonathan Simmons ,  Sumanth Banda

IPC分类号： H01T23/00 ,  H01L21/683 ,  H01L21/673

摘要： A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned adjacent to the porous plug and is configured to form one or more of a radial seal between the porous plug and the cavity and an axial seal between the porous plug and the cooling base.

公开(公告)号：USD1042373S1

公开(公告)日：2024-09-17

申请号：US29831295

申请日：2022-03-18

申请人： Applied Materials, Inc.

设计人： Sahiti Nallagonda ,  Jonathan Simmons ,  Xinwei Huang ,  Peter Muraoka ,  Andreas Schmid

摘要： FIG. 1 is a top, front, right isometric view of a sliding ring for an interlocking process kit for a substrate processing chamber, showing our new design.
FIG. 2 is a bottom, left, back isometric view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a front elevation view thereof.
FIG. 6 is a back elevation view thereof.
FIG. 7 is a right side elevation view thereof.
FIG. 8 is a left side elevation view thereof; and,
FIG. 9 is an enlarged cross-sectional view taken along line 9-9 in FIG. 3.

公开(公告)号：USD1042374S1

公开(公告)日：2024-09-17

申请号：US29831299

申请日：2022-03-18

申请人： Applied Materials, Inc.

设计人： Sahiti Nallagonda ,  Jonathan Simmons ,  Xinwei Huang ,  Peter Muraoka ,  Andreas Schmid

摘要： FIG. 1 is a top, front, right isometric view of a support pipe for an interlocking process kit for a substrate processing chamber, showing our new design.
FIG. 2 is a bottom, left, back isometric view thereof.
FIG. 3 is a top plan view thereof.
FIG. 4 is a bottom plan view thereof.
FIG. 5 is a front elevation view thereof.
FIG. 6 is a back elevation view thereof.
FIG. 7 is a right side elevation view thereof.
FIG. 8 is a left side elevation view thereof; and,
FIG. 9 is an enlarged cross-sectional view taken along line 9-9 in FIG. 3.
The dashed lines in FIGS. 1-9 represent unclaimed environment and form no part of the claimed design.

公开(公告)号：US11651987B2

公开(公告)日：2023-05-16

申请号：US17672507

申请日：2022-02-15

申请人： Applied Materials, Inc.

发明人： Stephen Donald Prouty ,  Andreas Schmid ,  Jonathan Simmons ,  Sumanth Banda

IPC分类号： H01T23/00 ,  H01L21/683 ,  H01L21/673

CPC分类号： H01L21/6833 ,  H01L21/67376

摘要： A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned in a groove formed in the cooling base and configured to form a seal between the cooling base and one or both of the porous plug and the body of the electrostatic chuck.