公开(公告)号：US20180066373A1

公开(公告)日：2018-03-08

申请号：US15811563

申请日：2017-11-13

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Sumanth Banda

IPC: C25D11/04 ,  C25D3/54 ,  C25D17/00 ,  C25D5/48 ,  C25D11/02

Abstract: A chamber component for a processing chamber comprises an article having impurities, an aluminum coating on a surface of the article, wherein the aluminum coating is substantially free from impurities, and an anodization layer over the aluminum coating. The anodization layer comprises aluminum oxide. The anodization layer further comprises a dense barrier layer portion and a porous columnar layer portion.

公开(公告)号：US09610591B2

公开(公告)日：2017-04-04

申请号：US13833257

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Dmitry Lubomirsky ,  Vladimir Knyazik ,  Hamid Noorbakhsh ,  Jason Della Rosa ,  Zheng John Ye ,  Jennifer Y. Sun ,  Sumanth Banda

IPC: B05B1/00 ,  H01J37/32 ,  C23C16/455

CPC classification number: B05B1/005 ,  B05B1/185 ,  C23C16/45565 ,  H01J37/3211 ,  H01J37/32146 ,  H01J37/32183 ,  H01J37/3244 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32623

Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side; a gas distribution plate disposed proximate the second side of the base; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed between the base and gas distribution plate.

公开(公告)号：US09447365B2

公开(公告)日：2016-09-20

申请号：US13757646

申请日：2013-02-01

Applicant: Applied Materials, Inc.

Inventor： Sumanth Banda ,  Jennifer Y. Sun

IPC: B08B3/04 ,  C11D7/08 ,  C11D11/00 ,  B08B3/12 ,  H01L21/02

CPC classification number: C11D7/08 ,  B08B3/04 ,  B08B3/12 ,  C11D11/0047 ,  C23C16/4407 ,  H01L21/02057

Abstract: A method including immersing a ceramic coated article into a bath including an HF acid solution having NH4F with a molar concentration of about 0.1M to 1.0M for a time period to remove a deposition, and rinsing the ceramic coated article.

Abstract translation: 一种方法，包括将陶瓷涂层制品浸入包括具有摩尔浓度为约0.1M至1.0M的NH 4 F的HF酸溶液的浴中以去除沉积物，并漂洗陶瓷涂覆的制品。

公开(公告)号：US11666952B2

公开(公告)日：2023-06-06

申请号：US16811282

申请日：2020-03-06

Applicant: Applied Materials, Inc.

Inventor： Stephen D. Prouty ,  Martin Perez-Guzman ,  Sumanth Banda ,  Rajinder Dhindsa ,  Alvaro Garcia de Gorordo

IPC: B08B9/08 ,  H01L21/683 ,  B08B5/00 ,  H01L21/30

CPC classification number: B08B9/08 ,  B08B5/00 ,  H01L21/30 ,  H01L21/6833 ,  B08B2209/08

Abstract: Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

公开(公告)号：US11651987B2

公开(公告)日：2023-05-16

申请号：US17672507

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Stephen Donald Prouty ,  Andreas Schmid ,  Jonathan Simmons ,  Sumanth Banda

IPC: H01T23/00 ,  H01L21/683 ,  H01L21/673

CPC classification number: H01L21/6833 ,  H01L21/67376

Abstract: A substrate support pedestal comprises an electrostatic chuck, a cooling base, a gas flow passage, a porous plug, and a sealing member. The electrostatic chuck comprises body having a cavity. The cooling base is coupled to the electrostatic chuck via a bond layer. The gas flow passage is formed between a top surface of the electrostatic chuck and a bottom surface of the cooling base. The gas flow passage further comprises the cavity. The porous plug is positioned within the cavity to control the flow of gas through the gas flow passage. The sealing member is positioned in a groove formed in the cooling base and configured to form a seal between the cooling base and one or both of the porous plug and the body of the electrostatic chuck.

公开(公告)号：US10899892B2

公开(公告)日：2021-01-26

申请号：US16724110

申请日：2019-12-20

Applicant: Applied Materials, Inc.

Inventor： Jennifer Y. Sun ,  Sumanth Banda

IPC: C08G77/442 ,  C08F283/12 ,  C08G77/385 ,  C08G77/50 ,  C08J7/16 ,  C08L27/12 ,  C08L83/04 ,  C09J127/12

Abstract: A method for preparing a bonding component comprises mixing a first solution comprising an organofluorine monomer unit with a second solution comprising an organosilicon monomer unit to form, in-situ, a copolymer solution comprising a copolymer of an organofluorine polymer and an organosilicon polymer based on the organofluorine monomer unit and the organosilicon monomer unit. The method further comprises depositing the copolymer solution onto a body to form a film of the copolymer, and curing the film of the copolymer.

公开(公告)号：US09597734B2

公开(公告)日：2017-03-21

申请号：US14534574

申请日：2014-11-06

Applicant: Applied Materials, Inc.

Inventor： Jennifer Sun ,  Sumanth Banda ,  Ren-Guan Duan

IPC: B23B31/28 ,  B23Q3/00 ,  B05B1/14 ,  B23B31/02 ,  B32B15/08 ,  C04B35/626 ,  C04B35/634 ,  C04B37/00 ,  C04B37/02 ,  H01L21/683

CPC classification number: B23B31/28 ,  B05B1/14 ,  B23B31/02 ,  B23Q3/00 ,  B32B15/08 ,  C04B35/6269 ,  C04B35/63424 ,  C04B37/005 ,  C04B37/006 ,  C04B37/008 ,  C04B37/025 ,  C04B37/026 ,  C04B37/028 ,  C04B2235/604 ,  C04B2237/064 ,  C04B2237/08 ,  C04B2237/12 ,  C04B2237/34 ,  C04B2237/343 ,  C04B2237/365 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/55 ,  C04B2237/62 ,  H01L21/6831 ,  Y10T156/10 ,  Y10T279/23

Abstract: Embodiments of the present disclosure generally provide chamber components with enhanced thermal properties and methods of enhancing thermal properties of chamber components including bonding materials. One embodiment of the present disclosure provides a method for fabricating a composite structure. The method includes applying a bonding material to a first component, and converting the bonding material applied to the first component to an enhanced bonding layer by heating the bonding material to outgas volatile species from the bonding material. The outgassed volatile species accumulates to at least 0.05% in mass of the bonding material. The method further includes contacting a second component and the enhanced bonding layer to join the first and second components.

公开(公告)号：US20140221188A1

公开(公告)日：2014-08-07

申请号：US13757646

申请日：2013-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Sumanth Banda ,  Jennifer Y. Sun

IPC: C11D7/08 ,  B08B3/12 ,  B08B1/00 ,  B08B3/10

CPC classification number: C11D7/08 ,  B08B3/04 ,  B08B3/12 ,  C11D11/0047 ,  C23C16/4407 ,  H01L21/02057

Abstract: A method including immersing a ceramic coated article into a bath including an HF acid solution having NH4F with a molar concentration of about 0.1M to 1.0M for a time period to remove a deposition, and rinsing the ceramic coated article.

Abstract translation: 一种方法，包括将陶瓷涂层制品浸入包括具有摩尔浓度为约0.1M至1.0M的NH 4 F的HF酸溶液的浴中以去除沉积物，并漂洗陶瓷涂覆的制品。

公开(公告)号：US12094716B2

公开(公告)日：2024-09-17

申请号：US17473821

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Leonard M. Tedeschi ,  Kartik Ramaswamy ,  Benjamin C E Schwarz ,  Changgong Wang ,  Vahid Firouzdor ,  Sumanth Banda ,  Teng-Fang Kou

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32862 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6833 ,  H01J2237/332 ,  H01J2237/334

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20230077578A1

公开(公告)日：2023-03-16

申请号：US17473821

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Leonard M. Tedeschi ,  Kartik Ramaswamy ,  Benjamin CE Schwarz ,  Changgong Wang ,  Vahid Firouzdor ,  Sumanth Banda ,  Teng-Fang Kou

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.