公开(公告)号：US11145504B2

公开(公告)日：2021-10-12

申请号：US16597466

申请日：2019-10-09

Applicant: Applied Materials, Inc.

Inventor： Zhijun Jiang ,  Ganesh Balasubramanian ,  Arkajit Roy Barman ,  Hidehiro Kojiri ,  Xinhai Han ,  Deenesh Padhi ,  Chuan Ying Wang ,  Yue Chen ,  Daemian Raj Benjamin Raj ,  Nikhil Sudhindrarao Jorapur ,  Vu Ngoc Tran Nguyen ,  Miguel S. Fung ,  Jose Angelo Olave ,  Thian Choi Lim

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/44 ,  C23C16/24 ,  C23C16/40

Abstract: A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.